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公开(公告)号：US20090104435A1
公开(公告)日：2009-04-23
申请号：US11920368
申请日：2006-05-12
CPC分类号： C23C28/00 , B82Y10/00 , C23C8/80 , C23C28/322 , C23C28/34 , C23C28/345 , H01L21/288 , H01L21/76838 , H01L29/66439 , Y10T428/25 , Y10T428/256 , Y10T428/31678
摘要： Disclosed is a method for the chemical modification of surfaces to form patterned nanoparticle arrays on the surfaces. Methods of producing arrays in predetermined patterns and electronic devices that incorporate such patterned arrays are also described.
摘要翻译： 公开了一种用于化学改性表面以在表面上形成图案化纳米颗粒阵列的方法。 还描述了以预定图案制造阵列的方法和结合了这种图案化阵列的电子装置。
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2.发明申请TEM GRIDS FOR DETERMINATION OF STRUCTURE-PROPERTY RELATIONSHIPS IN NANOTECHNOLOGY 有权用于确定纳米技术结构与性质关系的TEM网格公开(公告)号：US20100155620A1
公开(公告)日：2010-06-24
申请号：US12600764
申请日：2008-05-19
CPC分类号： H01J37/20 , G01N1/32 , H01J37/26 , H01J2237/2826 , Y10S977/954 , Y10T428/24331
摘要： Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.
摘要翻译： 通过在硅衬底上形成氧化层来制造具有电子透明SiO 2窗口的硅栅，用作化学改性SiO 2表面的高分辨率透射电子显微镜的衬底。 通过将衬底蚀刻到氧化物层，在硅衬底中限定孔。 单个基板可以包括在由基板中的一个或多个通道限定的相应框架区域中的多个孔。 可以提供结构或化学官能化，通过TEM观察表面相互作用。
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3.发明申请Silicon Substrates with Thermal Oxide Windows for Transmission Electron Microscopy 审中-公开具有热氧化物窗的硅衬底用于透射电子显微镜公开(公告)号：US20080280099A1
公开(公告)日：2008-11-13
申请号：US11921056
申请日：2006-05-23
CPC分类号： H01J37/20 , Y10T428/24331
摘要： Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Tabs are provided to secure the frame regions to the substrate, and the tabs are readily broken to obtain a particular frame region. Conductive or other features can be defined on the oxide layers prior to separation of the frame regions from the substrate.
摘要翻译： 具有电子透明SiO 2窗的硅栅，用作化学改性SiO 2表面的高分辨率透射电子显微镜的基板，通过在 硅衬底。 通过将衬底蚀刻到氧化物层，在硅衬底中限定孔。 单个基板可以包括在由基板中的一个或多个通道限定的相应框架区域中的多个孔。 提供凸片以将框架区域固定到基板，并且突片容易断裂以获得特定的框架区域。 在将框架区域与衬底分离之前，可以在氧化物层上限定导电或其它特征。
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4.发明授权TEM grids for determination of structure-property relationships in nanotechnology 有权用于确定纳米技术中结构 - 性质关系的TEM网格公开(公告)号：US08212225B2
公开(公告)日：2012-07-03
申请号：US12600764
申请日：2008-05-19
CPC分类号： H01J37/20 , G01N1/32 , H01J37/26 , H01J2237/2826 , Y10S977/954 , Y10T428/24331
摘要： Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.
摘要翻译： 通过在硅衬底上形成氧化层来制造具有电子透明SiO 2窗口的硅栅，用作化学改性SiO 2表面的高分辨率透射电子显微镜的衬底。 通过将衬底蚀刻到氧化物层，在硅衬底中限定孔。 单个基板可以包括在由基板中的一个或多个通道限定的相应框架区域中的多个孔。 可以提供结构或化学官能化，通过TEM观察表面相互作用。
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5.发明授权High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces 失效金属三氟甲磺酸盐或三氟乙酸封端III-V半导体表面上的高K电介质生长公开(公告)号：US07763317B2
公开(公告)日：2010-07-27
申请号：US11694781
申请日：2007-03-30
IPC分类号： C23C16/00
CPC分类号： H01L21/0228 , H01L21/02178 , H01L21/306 , H01L21/3141
摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.
摘要翻译： 描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。 在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。 在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。 在另一个实施方案中，通过使三氟甲磺酸酯或三氟乙酸酯保护基团与质子源如水（H 2 O）反应，钝化的化合物半导体表面在ALD室中活化。 然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3）。
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6.发明申请HIGH K DIELECTRIC GROWTH ON METAL TRIFLATE OR TRIFLUOROACETATE TERMINATED III-V SEMICONDUCTOR SURFACES 失效金属三聚物或三氟化铵终止的III-V半导体表面的高K电介质生长公开(公告)号：US20080241423A1
公开(公告)日：2008-10-02
申请号：US11694781
申请日：2007-03-30
IPC分类号： C23C22/00
CPC分类号： H01L21/0228 , H01L21/02178 , H01L21/306 , H01L21/3141
摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.
摘要翻译： 描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。 在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。 在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。 在另一个实施方案中，钝化的化合物半导体表面通过使三氟甲磺酸酯或三氟乙酸酯保护基与质子源（例如水（H 2 O 2））反应而在ALD室中活化。 然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3 O 3）。
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