摘要:
This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.
摘要:
This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.
摘要:
A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
摘要:
A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
摘要:
A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
摘要:
A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.