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1.发明授权Nonvolatile memory devices that utilize dummy word line segments to inhibit dishing during fabrication 有权在制造期间利用伪字线段来抑制凹陷的非易失性存储器件公开(公告)号：US08339859B2
公开(公告)日：2012-12-25
申请号：US13404335
申请日：2012-02-24
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： G11C16/04
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸。
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公开(公告)号：US20130102151A1
公开(公告)日：2013-04-25
申请号：US13709131
申请日：2012-12-10
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： H01L21/02
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸
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公开(公告)号：US08901746B2
公开(公告)日：2014-12-02
申请号：US14227625
申请日：2014-03-27
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： H01L23/48 , G11C5/06 , G11C16/04 , H01L27/02 , H01L27/115 , H01L21/02 , H01L21/033 , H01L21/3213
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸。
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4.发明授权NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same 有权具有具有整体形成的接触焊盘和虚线的布线的NAND闪存器件及其制造方法公开(公告)号：US07885114B2
公开(公告)日：2011-02-08
申请号：US12240529
申请日：2008-09-29
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： G11C16/04
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸。
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公开(公告)号：US20140210095A1
公开(公告)日：2014-07-31
申请号：US14227625
申请日：2014-03-27
申请人： Jang-ho Park , Jae-Kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-Kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： H01L27/115
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction
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公开(公告)号：US20140159246A1
公开(公告)日：2014-06-12
申请号：US14182329
申请日：2014-02-18
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： H01L23/48
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸
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公开(公告)号：US08673782B2
公开(公告)日：2014-03-18
申请号：US13709131
申请日：2012-12-10
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： H01L21/308
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
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8.发明授权NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same 有权具有具有整体形成的接触焊盘和虚线的布线的NAND闪存器件及其制造方法公开(公告)号：US08213231B2
公开(公告)日：2012-07-03
申请号：US12987795
申请日：2011-01-10
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： G11C16/04
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸。
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9.发明申请Nonvolatile Memory Devices that Utilize Dummy Word Line Segments to Inhibit Dishing During Fabrication 有权非易失性存储器件利用虚拟字线段在制作过程中抑制损伤公开(公告)号：US20120147674A1
公开(公告)日：2012-06-14
申请号：US13404335
申请日：2012-02-24
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
IPC分类号： G11C16/04
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸
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10.发明申请NAND FLASH MEMORY DEVICES HAVING WIRING WITH INTEGRALLY-FORMED CONTACT PADS AND DUMMY LINES AND METHODS OF MANUFACTURING THE SAME 有权具有整体形成的接触垫和连接线的接线的NAND闪存存储器件及其制造方法公开(公告)号：US20110103147A1
公开(公告)日：2011-05-05
申请号：US12987795
申请日：2011-01-10
申请人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
发明人： Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
CPC分类号： H01L23/48 , G11C5/063 , G11C16/0483 , H01L21/02697 , H01L21/0337 , H01L21/32139 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction
摘要翻译： NAND闪速存储器件包括布置在多层衬底的公共层上的多个连续导体，所述多个连续导体包括沿着第一方向平行延伸的相应的导线，设置在相应导电线的端部处的相应接触焊盘和 相应的导电虚拟线沿着第二方向从接触焊盘平行延伸
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