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    Structure for sputtering an anti-reflection layer onto a board at low temperature and a manufacturing method
    1.
    发明申请
    Structure for sputtering an anti-reflection layer onto a board at low temperature and a manufacturing method 审中-公开
    在低温下将抗反射层溅射到板上的结构和制造方法

    公开(公告)号：US20070193876A1

    公开(公告)日：2007-08-23

    申请号：US11358090

    申请日：2006-02-22

    申请人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Chao-Lan Lee

    发明人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Chao-Lan Lee

    IPC分类号： C23C14/32 ,  B32B9/04

    CPC分类号： C23C14/022 ,  C23C14/086 ,  C23C14/10 ,  G02B1/115 ,  Y10T428/31504

    摘要： A manufacturing method for sputtering an anti-refection layer onto a board at low temperature has the merits of easily being implemented and easily mass-produced. The manufacturing method is used for sputtering multiple anti-refection layers onto a board. The method can be used for mass-producing anti-reflection panels as the raw material for the photo industry. The method is superior to the manufacturing method for producing nebulization anti-reflection panels. This invention utilizes the anti-reflection characteristics of the board structure that is sputtered and stacked alternatively with high index refraction layers and low index refraction layers. A continuous manufacturing process is adopted. The present invention uses plasma to clean the surface of the boards and adopts a traditional sputtering machine. Therefore, it is convenient for installing and mass-producing high quality material.

    摘要翻译： 在低温下将抗反射层溅射到基板上的制造方法具有易于实现和容易批量生产的优点。 该制造方法用于将多个抗反射层溅射到板上。 该方法可用于批量生产抗反射板作为照相工业的原料。 该方法优于制造雾化防反射板的制造方法。 本发明利用板结构的防反射特性，其具有高折射率折射层和低折射折射层的溅射和堆叠。 采用连续制造工艺。 本发明使用等离子体清洁电路板的表面并采用传统的溅射机。 因此，安装和批量生产高品质材料是方便的。

    Method for sputtering a multilayer film on a sheet workpiece at a low temperature
    2.
    发明申请
    Method for sputtering a multilayer film on a sheet workpiece at a low temperature 审中-公开
    在低温下在片材工件上溅射多层膜的方法

    公开(公告)号：US20070119702A1

    公开(公告)日：2007-05-31

    申请号：US11289289

    申请日：2005-11-30

    申请人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

    发明人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

    IPC分类号： C23C14/00

    CPC分类号： C23C14/562

    摘要： A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to clean a surface of a sheet workpiece, sputtering at least one metal oxide or semiconductor oxide on the sheet workpiece, and sputtering at least one ITO transparent electric layer on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work stations, thereby controlling delay time between the work stations of the sheet workpiece within a given range. The sheet workpiece is made from a macromolecular material.

    摘要翻译： 在本发明的低温下在薄板工件上溅射多层膜的方法具有以下步骤：使用等离子体清洁片材工件的表面，在片材工件上溅射至少一种金属氧化物或半导体氧化物，以及 在片材工件上溅射至少一个ITO透明电层。 片材工件的薄膜溅射工艺使用连续的连续工作站，从而控制在给定范围内的片材工件的工作站之间的延迟时间。 片材工件由大分子材料制成。

    Method for sputtering a multilayer film on a sheet workpiece at a low temperature
    3.
    发明申请
    Method for sputtering a multilayer film on a sheet workpiece at a low temperature 审中-公开
    在低温下在片材工件上溅射多层膜的方法

    公开(公告)号：US20070119704A1

    公开(公告)日：2007-05-31

    申请号：US11698904

    申请日：2007-01-29

    申请人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

    发明人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

    IPC分类号： C23C14/00

    CPC分类号： C23C14/562 ,  C23C14/086 ,  C23C14/541

    摘要： A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to modify a surface of a sheet workpiece, providing a reciprocating sputtering process to deposit metal oxide layers or semiconductor oxide layers on the sheet workpiece, preheating the sheet workpiece and providing a reciprocating ITO sputtering process to sputter ITO transparent conductive layers on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work line and controls delay time between the sputtering units to deposit a film with a predetermined thickness on the sheet workpiece.

    摘要翻译： 在本发明的低温下在薄板工件上溅射多层膜的方法具有以下步骤：使用等离子体来改变片材工件的表面，提供往复溅射工艺以将金属氧化物层或半导体氧化物层沉积在 片材工件，预热片材工件，并提供往复式ITO溅射工艺，以在片材工件上溅射ITO透明导电层。 片材工件的薄膜溅射工艺采用连续的连续工作线，并控制溅射单元之间的延迟时间，以在薄板工件上沉积预定厚度的薄膜。

    ITO layer manufacturing process & application structure
    4.
    发明申请
    ITO layer manufacturing process & application structure 审中-公开
    ITO层制造工艺及应用结构

    公开(公告)号：US20100214230A1

    公开(公告)日：2010-08-26

    申请号：US11978555

    申请日：2007-10-30

    申请人： Jau-Jier Chu ,  I-Wen Lee ,  Shih-Liang Chou ,  Po-Yao Lai ,  Chien-Min Weng

    发明人： Jau-Jier Chu ,  I-Wen Lee ,  Shih-Liang Chou ,  Po-Yao Lai ,  Chien-Min Weng

    IPC分类号： G06F3/041 ,  B32B17/06 ,  B32B27/06 ,  C23C14/34

    CPC分类号： G06F3/041 ,  C03C17/2453 ,  C03C2217/231 ,  C03C2218/154 ,  C03C2218/32 ,  C03C2218/345 ,  C23C14/086 ,  C23C14/5806 ,  Y10T428/265

    摘要： A two-stage manufacturing process for preparation of an ITO layer includes having first a transparent substrate, e.g., a glass or plastic substrate going through treatment without preheating; the substrate is then sputtering processed in a sputtering chamber under process conditions without heating up to form a amorphous state ITO film on the surface of the transparent substrate; followed with a thermal treatment at a preset temperature to turn the ITO layer into a crystalline state without compromising strength of the glass or the plastic substrate while delivering a durable ITO layer and a structure of ITO layer provided with a specific sheet resistance and/or thickness. The ITO layer produced using the present invention particularly fits to be applied in a touch screen structure.

    摘要翻译： 用于制备ITO层的两阶段制造方法包括首先具有透明衬底，例如通过处理而不预热的玻璃或塑料衬底; 然后在工艺条件下在溅射室中对衬底进行溅射处理，而不加热，以在透明衬底的表面上形成非晶态ITO膜; 然后在预设温度下进行热处理，以将ITO层转变成结晶状态，而不损害玻璃或塑料基板的强度，同时传送耐用的ITO层和设置有特定薄层电阻和/或厚度的ITO层的结构 。 使用本发明生产的ITO层特别适用于触摸屏结构。

    Simple process for anti-reflection coating with multiple metal films
    7.
    发明授权
    Simple process for anti-reflection coating with multiple metal films 失效
    具有多个金属膜的抗反射涂层的简单工艺

    公开(公告)号：US5916684A

    公开(公告)日：1999-06-29

    申请号：US995914

    申请日：1997-12-22

    申请人： Jau-Jier Chu ,  I-Wen Lee

    发明人： Jau-Jier Chu ,  I-Wen Lee

    IPC分类号： G02B1/11 ,  B32B17/00

    CPC分类号： G02B1/116 ,  Y10T428/31678 ,  Y10T428/31692

    摘要： An anti-reflection screen filter is provided that includes four consecutively applied layers to a substrate. A first layer, furthest from the substrate, is arranged on an underlying second layer and comprises an oxide material having a refractive index within the approximating range of 1.46 to 1.50 at a wavelength of 520 nm. The second layer is arranged on an underlying third layer and is formed by a metal having a refractive index within the approximating range of 1.5 to 4.0 at a wavelength of 520 nm. The third layer is arranged on an underlying fourth layer and is formed by a metal having a refractive index within the approximating range of 0.2 to 1.4 at a wavelength of 520 nm. The fourth layer is disposed on the front surface of a substrate and is formed by a metal having a refractive index within the approximating range of 1.5 to 4.0 at a wavelength of 520 nm.

    摘要翻译： 提供了一种防反射屏蔽滤光器，其包括四个连续施加到基板的层。 距离衬底最远的第一层被布置在下面的第二层上，并且包括在520nm的波长处的折射率在1.46至1.50的近似范围内的氧化物材料。 第二层布置在下面的第三层上，并且由在520nm的波长处的折射率在1.5至4.0的近似范围内的金属形成。 第三层布置在下面的第四层上，并且由在520nm的波长处的折射率在0.2至1.4的近似范围内的金属形成。 第四层设置在基板的前表面上，并且由在520nm的波长处的折射率在1.5至4.0的近似范围内的金属形成。

    METHOD OF FABRICATING TRANSPARENT CONDUCTIVE FILM
    9.
    发明申请
    METHOD OF FABRICATING TRANSPARENT CONDUCTIVE FILM 审中-公开
    制造透明导电膜的方法

    公开(公告)号：US20100101937A1

    公开(公告)日：2010-04-29

    申请号：US12260092

    申请日：2008-10-29

    申请人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  I-Wen Lee ,  Shih-Liang Chou

    发明人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  I-Wen Lee ,  Shih-Liang Chou

    IPC分类号： C23C14/34

    CPC分类号： C23C14/025 ,  C23C14/086 ,  C23C14/34

    摘要： A method of fabricating transparent conductive film including the following steps is provided. First, a reactive chamber having at least a target and at least a heating device is provided. Subsequentially, a plasma is generated in the reactive chamber, wherein the plasma is located above the target. Next, the plasma is heated by the heating device from a standby temperature to a working temperature. Simultaneously, a hard plastic substrate is passed above the plasma at a specific speed, wherein the particles of the target are bombarded by the plasma so as to form transparent conductive film on the hard plastic substrate.

    摘要翻译： 提供一种制造透明导电膜的方法，包括以下步骤。 首先，提供具有至少目标物和至少一个加热装置的活性室。 其次，在反应室中产生等离子体，其中等离子体位于靶上方。 接下来，等离子体被加热装置从待机温度加热到工作温度。 同时，硬质塑料基板以特定速度通过等离子体上方，其中靶的粒子被等离子体轰击，以在硬塑料基板上形成透明导电膜。

    Method of strengthening glass plate
    10.
    发明授权
    Method of strengthening glass plate 失效
    加强玻璃板的方法

    公开(公告)号：US08245535B2

    公开(公告)日：2012-08-21

    申请号：US12575471

    申请日：2009-10-08

    申请人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  Fu-Jen Wang ,  Shih-Liang Chou ,  I-Wen Lee ,  Ching-Hsiu Cheng

    发明人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  Fu-Jen Wang ,  Shih-Liang Chou ,  I-Wen Lee ,  Ching-Hsiu Cheng

    IPC分类号： C03C15/00 ,  C03C21/00

    CPC分类号： C03C23/006 ,  C03C21/002

    摘要： A method of strengthening glass plate is provided. A plasma treating process is performed on a glass plate so that a surface pore variation of the glass plate after the plasma treating process is reduced relative to the surface pore variation of the glass plate before the plasma treating process, wherein the surface pore variation is a variation degree of surface pores in different unit areas of the glass plate. In the mean time, a melted network crosslinking structure is formed on the surface of the glass plate. Based on the above-mentioned mechanisms, the glass plate is strengthened. The plasma treating process is conducive to strengthen the glass plate whether the plasma treating process is performed before or after the conventional chemical strengthening process.

    摘要翻译： 提供一种强化玻璃板的方法。 在玻璃板上进行等离子体处理，使等离子体处理后的玻璃板的表面孔隙变化相对于等离子体处理工序前的玻璃板的表面孔隙变化量减小，其中表面孔隙变化为 玻璃板不同单位面积的表面孔隙变化程度。 同时，在玻璃板的表面上形成熔融的网状交联结构。 基于上述机理，玻璃板被加强。 等离子体处理方法有利于加强玻璃板，无论是否在常规化学强化过程之前或之后进行等离子体处理工艺。