SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 审中-公开
    半导体存储器件及其操作方法

    公开(公告)号:US20140026012A1

    公开(公告)日:2014-01-23

    申请号:US13602413

    申请日:2012-09-04

    申请人: Ji-Hyun KIM

    发明人: Ji-Hyun KIM

    IPC分类号: G11C29/00

    摘要: A semiconductor memory device includes an error correction code (ECG) result generation block configured to receive a decision voltage, to perform an ECC operation, and to output ECC information, and a decision voltage control block configured to control a voltage level adjustment width of the decision voltage in response to the ECC information. As described above, the semiconductor memory device according to an embodiment of the present invention may perform diverse ECC operations by controlling the voltage level adjustment width of the decision voltage VR that is used during the ECC operation, and through the diverse ECC operations, the time for performing an ECC operation may be reduced and the operation efficiency of the ECC operation may be increased.

    摘要翻译: 一种半导体存储器件,包括:错误校正码(ECG)结果产生块,被配置为接收判定电压,执行ECC操作,并输出ECC信息;以及判定电压控制块,被配置为控制电压电平调整宽度 响应于ECC信息的判定电压。 如上所述,根据本发明的实施例的半导体存储器件可以通过控制在ECC操作期间使用的判定电压VR的电压电平调整宽度,并且通过不同的ECC操作,时间 可以减少用于执行ECC操作的ECC操作,并且可以增加ECC操作的操作效率。

    METHOD OF MANUFACTURING A DISPLAY SUBSTRATE
    3.
    发明申请
    METHOD OF MANUFACTURING A DISPLAY SUBSTRATE 有权
    制造显示基板的方法

    公开(公告)号:US20120171793A1

    公开(公告)日:2012-07-05

    申请号:US13166706

    申请日:2011-06-22

    IPC分类号: H01L33/36

    CPC分类号: H01L27/1288

    摘要: A method of manufacturing a display substrate includes forming a common electrode line, a gate line, a data line and a switching element connected to the gate and data lines on an insulation substrate. A first pixel electrode and an insulation layer are sequentially formed on the insulation substrate. A first photoresist pattern having a first hole and a second hole is formed from a first photoresist layer on the insulation substrate. A first transparent electrode layer is coated on the insulation substrate. A second photoresist layer is coated on the insulation substrate. The second photoresist layer is exposed and developed to form a second photoresist pattern remaining in the first hole and the second hole. The first transparent electrode layer is patterned using the second photoresist pattern, to form a second pixel electrode.

    摘要翻译: 制造显示基板的方法包括在绝缘基板上形成公共电极线,栅极线,数据线以及连接到栅极和数据线的开关元件。 第一像素电极和绝缘层依次形成在绝缘基板上。 具有第一孔和第二孔的第一光致抗蚀剂图案由绝缘基板上的第一光致抗蚀剂层形成。 第一透明电极层涂覆在绝缘基板上。 第二光致抗蚀剂层涂覆在绝缘基板上。 第二光致抗蚀剂层被曝光和显影以形成保留在第一孔和第二孔中的第二光致抗蚀剂图案。 使用第二光致抗蚀剂图案对第一透明电极层进行构图,以形成第二像素电极。

    TIME DIFFERENCE ADDERS, TIME DIFFERENCE ACCUMULATORS, SIGMA-DELTA TIME-TO-DIGITAL CONVERTERS, DIGITAL PHASE LOCKED LOOPS AND TEMPERATURE SENSORS
    4.
    发明申请
    TIME DIFFERENCE ADDERS, TIME DIFFERENCE ACCUMULATORS, SIGMA-DELTA TIME-TO-DIGITAL CONVERTERS, DIGITAL PHASE LOCKED LOOPS AND TEMPERATURE SENSORS 审中-公开
    时差补偿器,时差补偿器,SIGMA-DELTA时数转换器,数字相位锁和温度传感器

    公开(公告)号:US20140086275A1

    公开(公告)日:2014-03-27

    申请号:US14072002

    申请日:2013-11-05

    IPC分类号: H03M1/06

    CPC分类号: H03M1/06 G04F10/005

    摘要: A time difference adder included in a system-on-chip (SOC) includes a first register unit and a second register unit. The first register unit is configured to receive first and second input signals having a first time difference, and generate a first output signal in response to a first signal. The second register unit is configured to receive third and fourth input signals having a second time difference, and generate a second output signal having a third time difference with respect to the first output signal in response to the first signal. The third time difference corresponds to a sum of the first time difference and the second time difference.

    摘要翻译: 包括在片上系统(SOC)中的时差加法器包括第一寄存器单元和第二寄存器单元。 第一寄存器单元被配置为接收具有第一时间差的第一和第二输入信号,并响应于第一信号产生第一输出信号。 第二寄存器单元被配置为接收具有第二时间差的第三和第四输入信号,并且响应于第一信号产生相对于第一输出信号具有第三时间差的第二输出信号。 第三时间差对应于第一时间差和第二时间差的和。

    SLIM-TYPE QUICK CRADLE FOR A PORTABLE TERMINAL
    6.
    发明申请
    SLIM-TYPE QUICK CRADLE FOR A PORTABLE TERMINAL 审中-公开
    SLIM型快速接头用于便携式终端

    公开(公告)号:US20130015311A1

    公开(公告)日:2013-01-17

    申请号:US13545069

    申请日:2012-07-10

    申请人: Ji-Hyun KIM

    发明人: Ji-Hyun KIM

    IPC分类号: H05K7/00

    摘要: A slim-type quick cradle for a portable terminal is provided, in which a support bar inclinedly supports the portable terminal, an engagement frame secures the support bar on a bottom surface of a body, and a hinge device connects the support bar with the engagement frame rotatably around a hinge axis and provides a closing, opening or stopping force to the support bar semi-automatically.

    摘要翻译: 提供了一种用于便携式终端的细长型快速支架,其中支撑杆倾斜地支撑便携式终端,接合框架将支撑杆固定在主体的底表面上,并且铰链装置将支撑杆与接合 框架围绕铰链轴线可旋转并且半自动地向支撑杆提供关闭,打开或停止力。

    POSITIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, RECHARGEABLE LITHIUM BATTERY USING THE SAME AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    POSITIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, RECHARGEABLE LITHIUM BATTERY USING THE SAME AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    用于可充电锂电池的正极活性材料,使用该锂电池的可充电锂电池及其制造方法

    公开(公告)号:US20110305947A1

    公开(公告)日:2011-12-15

    申请号:US13158930

    申请日:2011-06-13

    IPC分类号: H01M4/131 H01M10/056

    摘要: Disclosed are a positive active material for a lithium rechargeable battery and a lithium rechargeable battery using the same, and the positive active material is represented by the following Chemical Formula 1, and has an effective magnetic moment of about 2.4 μB/mol or greater at a temperature of more than or equal to a Curie temperature. Chemical Formula 1: LiMeO2. In Chemical Formula 1, Me is NixCOyMnzM′k, 0.45≦x≦0.65, 0.15≦y≦0.25, 0.15≦z≦0.35, 0.9≦a≦1.2, 0≦k≦0.1, x+y+z+k=1, and M′ is Al, Mg, Ti, Zr, or a combination thereof. The positive active material may have an a-axis lattice constant of the positive active material of about 2.865 Å or greater, and may have a c-axis lattice constant of the positive active material of about 14.2069 Å or greater. A mole ratio of Li to Me of Chemical Formula 1 may range from about 0.9 to about 1.2.

    摘要翻译: 公开了一种锂可再充电电池的正极活性材料和使用该锂二次电池的锂可再充电电池,正极活性材料由以下化学式1表示,并且在a的情况下具有约2.4μB/ mol以上的有效磁矩 温度大于或等于居里温度。 化学式1:LiMeO 2。 在化学式1中,Me是NixCOyMnzM'k,0.45≦̸ x和nlE; 0.65,0.15和nlE; y≦̸ 0.25,0.15≦̸ z≦̸ 0.35,0.9≦̸ a≦̸ 1.2,0≦̸ k≦̸ 0.1,x + y + z + k = 1,M'为Al,Mg,Ti,Zr或其组合。 正极活性材料可以具有约2.865或更高的正极活性材料的a轴晶格常数,并且可以具有约14.2069埃或更高的正极活性材料的c轴晶格常数。 化学式1的Li与Me的摩尔比可以在约0.9至约1.2的范围内。