摘要:
An active structure in the semiconductor die of an amplifier or converter includes a plurality of stacked active layers with different compositions. The different compositions lead to a spectral offset between the respective gain bands of the layers which widens the gain band of the amplifier or the optical bandwidth of the converter. Applications include fiber optic telecommunication networks.
摘要:
To format a power modulated input optical signal, at the same time as improving its power dynamic range and the extinction rate of the output signal, a device for formatting binary optical signals includes a first stage for supplying a modulating signal having stabilized high levels as a function of the input signal and an interferometer structure second stage receiving the modulating signal and a probe wave power modulated in phase opposition to the modulation of the modulating signal. The low and high levels of the probe wave are stabilized. Applications include optical transmission.
摘要:
The field of the invention is that of the semiconductor optical devices used in particular for fibre-optic telecommunications. To function efficiently, a certain number of semiconductor devices require the use of light polarized in a given polarization state. When knowledge of the polarization the state is lost, the optical element according to the invention makes it possible to polarize the light again in a known polarization state. By using two of these elements in combination with a coupler, it is possible to produce a device which fulfils the same function as a polarization splitter. This optical assembly delivers two output signals whose polarization states are the projections of the initial polarization onto two orthogonal axes. The main advantage of these devices is that they are produced using polarization rotators based on photonic crystals, and they can consequently be integrated easily into semiconductor devices, which the use of discrete polarizers does not allow.
摘要:
The field of the invention is that of optoelectronic components with a buried stripe structure. The optoelectronic device according to the invention is a stripe structure, comprising at least one buried waveguide and a layer called a grating layer in the form of an elongate stripe comprising features, each feature having an approximately rectangular shape, the length of the feature being substantially perpendicular to the direction of the length of the stripe of the grating layer, the layer being placed so as to provide optical coupling with an optical wave propagating in the waveguide, the length of certain features being substantially less than the width of the waveguide.
摘要:
The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer. The invention proposes, so as to limit the disturbing effects of the contact layer on the propagation of the laser beam, that the contact layer be eliminated above the active zone and that the injection of the charge carriers be ensured via the lateral faces and the edges of the upper face of the active zone.