公开(公告)号：US06764952B1

公开(公告)日：2004-07-20

申请号：US10099232

申请日：2002-03-13

申请人： Jengyi Yu ,  Ka Shun Wong ,  Sanjeev Jain ,  Somnath Nag ,  Haiying Fu ,  Atul Gupta ,  Bart J. Van Schravendijk

发明人： Jengyi Yu ,  Ka Shun Wong ,  Sanjeev Jain ,  Somnath Nag ,  Haiying Fu ,  Atul Gupta ,  Bart J. Van Schravendijk

IPC分类号： H01L2144

CPC分类号： H01L21/02126 ,  C23C16/325 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/28525 ,  H01L21/314 ,  H01L21/31633 ,  Y10S438/958

摘要： Two sequential treatments within a chemical vapor deposition chamber, or within sequential chambers without a vacuum break, are performed on a copper layer to clean and passivate the copper surface prior to deposition of a copper diffusion barrier layer or a dielectric layer. The first treatment includes an ammonia, a hydrogen, or a hydrocarbon plasma cleaning of the copper surface followed by a short initiation of an organosilane precursor or a thin silicon nitride layer. A copper diffusion barrier layer may then be formed over the pretreated copper surface using an organosilane plasma, with or without a carbon dioxide or a carbon monoxide, or a silane with a nitrogen gas and an ammonia gas. Copper diffusion is retarded and film adhesion is improved for a dielectric layer or a copper diffusion barrier layer on the copper surface.

摘要翻译： 化学气相沉积室内或在没有真空断裂的连续室内的两个连续处理在铜层上进行，以在沉积铜扩散阻挡层或介电层之前对铜表面进行清洁和钝化。 第一种处理包括氨，氢或铜表面的烃等离子体清洗，随后有机硅烷前体或薄氮化硅层的短时间启动。 然后可以使用具有或不具有二氧化碳或一氧化碳的有机硅烷等离子体或具有氮气和氨气的硅烷在预处理的铜表面上形成铜扩散阻挡层。 对于铜表面上的电介质层或铜扩散阻挡层，延伸铜扩散并改善膜粘附。

公开(公告)号：US06777349B2

公开(公告)日：2004-08-17

申请号：US10184681

申请日：2002-06-28

申请人： Haiying Fu ,  Ka Shun Wong ,  Xingyuan Tang ,  Judy Hsiu-Chih Huang ,  Bart Jan van Schravendijk

发明人： Haiying Fu ,  Ka Shun Wong ,  Xingyuan Tang ,  Judy Hsiu-Chih Huang ,  Bart Jan van Schravendijk

IPC分类号： H01L2131

CPC分类号： C23C16/325 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28525 ,  H01L21/314 ,  H01L21/31633 ,  Y10S438/931

摘要： Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.

摘要翻译： 密封非晶掺杂碳化硅沉积在PECVD反应器中的集成电路衬底上。 通过使含氮分子（优选氮或氨气）与有机硅烷（优选四甲基硅烷）一起流入反应器室并形成等离子体来进行SiC膜的氮掺杂。 通过将含氧分子流入反应室来进行氧掺杂。