公开(公告)号：US6069056A

公开(公告)日：2000-05-30

申请号：US998828

申请日：1997-12-29

申请人： Jeong Hwan Son ,  Jong Kwan Kim

发明人： Jeong Hwan Son ,  Jong Kwan Kim

IPC分类号： H01L21/76 ,  H01L21/3105 ,  H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/31056

摘要： A method of forming an isolation region of a semiconductor device, includes the steps of forming a first insulating film on a substrate; defining a plurality of isolation regions on the first insulating film; removing portions of the first insulating film in the isolation regions to expose portions of the substrate; selectively removing the exposed portions of the substrate to form at least one trench; forming a second insulating film in the at least one trench and on portions of the first insulating film; and removing the first insulating film so as to remove the second insulating film formed thereon.

摘要翻译： 一种形成半导体器件的隔离区域的方法，包括在衬底上形成第一绝缘膜的步骤; 在所述第一绝缘膜上限定多个隔离区; 去除所述隔离区域中的所述第一绝缘膜的部分以暴露所述衬底的部分; 选择性地去除衬底的暴露部分以形成至少一个沟槽; 在所述至少一个沟槽中和所述第一绝缘膜的一部分上形成第二绝缘膜; 以及去除所述第一绝缘膜以除去其上形成的所述第二绝缘膜。

公开(公告)号：US07936517B2

公开(公告)日：2011-05-03

申请号：US12654121

申请日：2009-12-10

申请人： Gyu Chan Cho ,  Jin Woo Lee ,  Sun Hong Park ,  Jong Kwan Kim

发明人： Gyu Chan Cho ,  Jin Woo Lee ,  Sun Hong Park ,  Jong Kwan Kim

IPC分类号： G02B27/10

CPC分类号： B29D11/0074 ,  G02B5/045

摘要： A method of extrusion molding a prism film and a prism film manufactured by the same, the method including providing a molten film, simultaneously forming a prism pattern and an embossed pattern on opposite surfaces of the molten film by passing the molten film through a gap between a prism roll and an emboss roll, and cooling the molten film having the prism pattern and the embossed pattern on opposite surfaces thereof.

摘要翻译： 一种用于挤出成型棱镜膜的方法和由其制造的棱镜膜，该方法包括提供熔融膜，同时通过使熔融膜通过熔融膜之间的间隙同时形成棱镜图案和压花图案在熔融膜的相对表面上 棱镜辊和压花辊，并且在其相对表面上冷却具有棱镜图案和压花图案的熔融膜。

公开(公告)号：US20170361640A1

公开(公告)日：2017-12-21

申请号：US15335641

申请日：2016-10-27

申请人： Jong Kwan Kim

发明人： Jong Kwan Kim ,  Sung-Ho Cho

IPC分类号： B43L23/02

CPC分类号： B43L23/02 ,  B43L23/008 ,  B43L23/08

摘要： An electric pencil sharpener includes a motor configured to drive a cutter assembly for shaving a pencil, a cutter platform including a bracket configured to removably attach to the cutter assembly in a first direction, and a body cover shaped to cover the cutter platform, wherein the body cover includes an opening that opens toward the first direction and a pencil guide hole that opens toward a second direction. The opening is in communication with a receiving space of the bracket in which the cutter assembly is received, and wherein the cutter assembly is attachable to the bracket through the opening by a user, when the body cover covers the cutter platform.

公开(公告)号：US06387789B1

公开(公告)日：2002-05-14

申请号：US09455497

申请日：1999-12-06

申请人： Jong Kwan Kim

发明人： Jong Kwan Kim

IPC分类号： H01L213205

CPC分类号： H01L29/66583 ,  H01L21/28052 ,  H01L21/28114 ,  H01L29/66553

摘要： Method for fabricating a semiconductor device, including the steps of (1) forming a gate insulating film, a silicon layer, and an insulating film on a substrate in succession, (2) selectively removing a portion of the insulating film on which a gate electrode is to be formed, (3) forming first sidewalls at sides of the insulating film having the portion removed therefrom, (4) forming silicide on a surface of the exposed silicon, (5) forming a cap insulating film on the silicide and the first sidewalls, (6) removing the insulating film, and (7) using the cap insulating film as a mask in removing the exposed silicon layer, to form the gate electrode.

摘要翻译： 制造半导体器件的方法包括以下步骤：（1）在衬底上依次形成栅极绝缘膜，硅层和绝缘膜，（2）选择性地去除绝缘膜的一部分，其中栅电极 （3）在除去部分的绝缘膜的侧面形成第一侧壁，（4）在暴露的硅的表面上形成硅化物，（5）在硅化物上形成帽绝缘膜，并且第一侧壁 侧壁，（6）去除绝缘膜，以及（7）使用帽绝缘膜作为掩模去除暴露的硅层，形成栅电极。

公开(公告)号：US09085318B2

公开(公告)日：2015-07-21

申请号：US13230328

申请日：2011-09-12

申请人： Jae Sang Park ,  Jong Kwan Kim

发明人： Jae Sang Park ,  Jong Kwan Kim

IPC分类号： B62D5/04 ,  G01L5/22 ,  G01L25/00

CPC分类号： B62D5/049 ,  G01L5/221 ,  G01L25/003

摘要： Disclosed is an electric power steering apparatus. The electric power steering apparatus includes: a torque sensor configured to detect a torque applied to a steering wheel; a current detector configured to measure a current flowing through a driving motor; and an electronic control unit configured to estimate a current flowing through the driving motor depending on the detected torque and compare the estimated current with the measured current to judge a malfunction of the torque sensor or the current detector.

摘要翻译： 公开了一种电动助力转向装置。 电动助力转向装置包括：转矩传感器，被配置为检测施加到方向盘的转矩; 电流检测器，被配置为测量流过驱动电动机的电流; 以及电子控制单元，被配置为根据检测到的转矩估计流过驱动电动机的电流，并将估计电流与测量电流进行比较，以判断扭矩传感器或电流检测器的故障。

公开(公告)号：US20100149648A1

公开(公告)日：2010-06-17

申请号：US12654121

申请日：2009-12-10

申请人： Gyu Chan Cho ,  Jin Woo Lee ,  Sun Hong Park ,  Jong Kwan Kim

发明人： Gyu Chan Cho ,  Jin Woo Lee ,  Sun Hong Park ,  Jong Kwan Kim

IPC分类号： G02B27/12 ,  B29D11/00

CPC分类号： B29D11/0074 ,  G02B5/045

摘要： A method of extrusion molding a prism film and a prism film manufactured by the same, the method including providing a molten film, simultaneously forming a prism pattern and an embossed pattern on opposite surfaces of the molten film by passing the molten film through a gap between a prism roll and an emboss roll, and cooling the molten film having the prism pattern and the embossed pattern on opposite surfaces thereof.

摘要翻译： 一种用于挤出成型棱镜膜的方法和由其制造的棱镜膜，该方法包括提供熔融膜，同时通过使熔融膜通过熔融膜之间的间隙同时形成棱镜图案和压花图案在熔融膜的相对表面上 棱镜辊和压花辊，并且在其相对表面上冷却具有棱镜图案和压花图案的熔融膜。

公开(公告)号：US08310759B2

公开(公告)日：2012-11-13

申请号：US13050412

申请日：2011-03-17

申请人： Jin Woo Lee ,  Gyu Chan Cho ,  Jong Kwan Kim ,  Jae Goo Doh

发明人： Jin Woo Lee ,  Gyu Chan Cho ,  Jong Kwan Kim ,  Jae Goo Doh

IPC分类号： G02B13/20 ,  G02B5/02

CPC分类号： G02B3/0043 ,  G02B5/02

摘要： A diffusing film may have a microlens pattern and an embossed pattern on the surface thereof. The diffusing film includes a light entrance plane for receiving incident light, a light exit plane opposite the light entrance plane, the light exit plane for transmitting light, a plurality of microlenses on a surface of the light exit plane of the diffusing film, microlenses of the plurality of microlenses being spaced apart from one another, and a separation plane between the plurality of microlenses, the separation plane having an embossed pattern on a surface thereof.

摘要翻译： 漫射膜可以在其表面上具有微透镜图案和压花图案。 漫射膜包括用于接收入射光的光入射面，与光入射面相对的光出射面，用于透射光的光出射面，在漫射膜的光出射面的表面上的多个微透镜，微透镜 所述多个微透镜彼此间隔开，并且所述多个微透镜之间的分离平面，所述分离平面在其表面上具有压花图案。

公开(公告)号：US20120072077A1

公开(公告)日：2012-03-22

申请号：US13230328

申请日：2011-09-12

申请人： Jae Sang Park ,  Jong Kwan Kim

发明人： Jae Sang Park ,  Jong Kwan Kim

IPC分类号： B62D5/04 ,  B62D119/00

CPC分类号： B62D5/049 ,  G01L5/221 ,  G01L25/003

摘要： Disclosed is an electric power steering apparatus. The electric power steering apparatus includes: a torque sensor configured to detect a torque applied to a steering wheel; a current detector configured to measure a current flowing through a driving motor; and an electronic control unit configured to estimate a current flowing through the driving motor depending on the detected torque and compare the estimated current with the measured current to judge a malfunction of the torque sensor or the current detector.

摘要翻译： 公开了一种电动助力转向装置。 电动助力转向装置包括：转矩传感器，被配置为检测施加到方向盘的转矩; 电流检测器，被配置为测量流过驱动电动机的电流; 以及电子控制单元，被配置为根据检测到的转矩估计流过驱动电动机的电流，并将估计电流与测量电流进行比较，以判断扭矩传感器或电流检测器的故障。

公开(公告)号：US06114729A

公开(公告)日：2000-09-05

申请号：US200794

申请日：1998-11-30

申请人： Seong Hyoung Park ,  Jong Kwan Kim

发明人： Seong Hyoung Park ,  Jong Kwan Kim

IPC分类号： H01L21/8249 ,  H01L21/22 ,  H01L21/265 ,  H01L21/74 ,  H01L21/822 ,  H01L27/06 ,  H01L29/76

CPC分类号： H01L21/74 ,  H01L21/822

摘要： Wells of a semiconductor device suitable for achieving high integration, and a method for forming the same are disclosed. The wells of a semiconductor device include a first conductivity type semiconductor substrate where a cell region and a periphery region are defined, a second conductivity type shield region in the entire cell region and in the entire periphery region at a depth below surface of the semiconductor substrate, a first conductivity type well on the second conductivity type shield region beneath the surface of the semiconductor substrate, a second conductivity type shield sidewall formed in the second conductivity type shield region and the first conductivity type well at border of the cell and periphery regions, a first conductivity type buried region formed at the second conductivity type shield region in the periphery region, and a second conductivity type well on the first conductivity type buried region in the first conductivity type well.

摘要翻译： 公开了适于实现高集成度的半导体器件的阱及其形成方法。 半导体器件的阱包括限定单元区域和外围区域的第一导电型半导体基板，在整个单元区域中的第二导电型屏蔽区域和位于半导体基板的表面下方的深度的整个外围区域 在半导体衬底的表面下面的第二导电类型屏蔽区域上的第一导电类型，形成在第二导电类型屏蔽区域中的第二导电类型屏蔽侧壁和在电池和外围区域的边界处的第一导电类型阱， 形成在周边区域的第二导电型屏蔽区域的第一导电型掩埋区域，以及在第一导电型阱中的第一导电型掩埋区域上的第二导电类型阱。

公开(公告)号：US5880014A

公开(公告)日：1999-03-09

申请号：US028310

申请日：1998-02-24

申请人： Seong Hyoung Park ,  Jong Kwan Kim

发明人： Seong Hyoung Park ,  Jong Kwan Kim

IPC分类号： H01L21/8249 ,  H01L21/22 ,  H01L21/265 ,  H01L21/74 ,  H01L21/822 ,  H01L27/06

CPC分类号： H01L21/74 ,  H01L21/822

摘要： Wells of a semiconductor device suitable for achieving high integration, and a method for forming the same are disclosed. The wells of a semiconductor device include a first conductivity type semiconductor substrate where a cell region and a periphery region are defined, a second conductivity type shield region in the entire cell region and in the entire periphery region at a depth below surface of the semiconductor substrate, a first conductivity type well on the second conductivity type shield region beneath the surface of the semiconductor substrate, a second conductivity type shield sidewall formed in the second conductivity type shield region and the first conductivity type well at border of the cell and periphery regions, a first conductivity type buried region formed at the second conductivity type shield region in the periphery region, and a second conductivity type well on the first conductivity type buried region in the first conductivity type well.

摘要翻译： 公开了适于实现高集成度的半导体器件的阱及其形成方法。 半导体器件的阱包括限定单元区域和外围区域的第一导电型半导体基板，在整个单元区域中的第二导电型屏蔽区域和位于半导体基板的表面下方的深度的整个外围区域 在半导体衬底的表面下面的第二导电类型屏蔽区域上的第一导电类型，形成在第二导电类型屏蔽区域中的第二导电类型屏蔽侧壁和在电池和外围区域的边界处的第一导电类型阱， 形成在周边区域的第二导电型屏蔽区域的第一导电型掩埋区域，以及在第一导电型阱中的第一导电型掩埋区域上的第二导电类型阱。