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    THIN FILM TRANSISTOR
    5.
    发明申请
    THIN FILM TRANSISTOR 审中-公开
    薄膜晶体管

    公开(公告)号：US20120097948A1

    公开(公告)日：2012-04-26

    申请号：US13193463

    申请日：2011-07-28

    申请人： Jeong-Hwan Kim ,  Ki-Hong Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

    发明人： Jeong-Hwan Kim ,  Ki-Hong Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

    IPC分类号： H01L29/786

    CPC分类号： H01L29/78621 ,  H01L27/0705 ,  H01L29/41733 ,  H01L29/42384

    摘要： A thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulating layer covering the gate electrode, a first semiconductor layer and a second semiconductor layer overlapping the gate electrode on the gate insulating layer and separated from each other, a first source electrode and a first drain electrode on the first semiconductor layer and on opposite sides of the gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer and on opposite sides of the gate electrode, wherein the first source electrode is coupled to the second source electrode through a source connection overlapping the gate electrode, and the first drain electrode is coupled to the second drain electrode, such that the on current and off current characteristics of the thin film transistor may be constantly maintained regardless of alignment error.

    摘要翻译： 薄膜晶体管包括衬底，衬底上的栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠并彼此分离的第一半导体层和第二半导体层，第一 源电极和第一漏电极，以及在第二半导体层上和栅电极的相对侧上的第二源电极和第二漏电极，其中第一源电极 通过与栅电极重叠的源极连接而耦合到第二源电极，并且第一漏电极耦合到第二漏电极，使得薄膜晶体管的导通电流和截止电流特性可以恒定地保持，而不管对准 错误。

    Image forming apparatus and control method thereof
    6.
    发明授权
    Image forming apparatus and control method thereof 有权
    图像形成装置及其控制方法

    公开(公告)号：US07983580B2

    公开(公告)日：2011-07-19

    申请号：US12511127

    申请日：2009-07-29

    申请人： Jeong-Hwan Kim ,  Myung-Ho Kyung

    发明人： Jeong-Hwan Kim ,  Myung-Ho Kyung

    IPC分类号： G03G15/16

    CPC分类号： G03G15/1605 ,  G03G2215/1623

    摘要： An image forming apparatus and a control method thereof to improve quality of an image in consideration of a change in posture of a print media. The image forming apparatus can include a transferred unit on which a visible image is formed, a transferring unit to form a transfer region through which the visible image is transferred onto a print medium, along with the transferred unit, a bias supplying unit to supply bias to the transferring unit so that a transfer electric field is produced in the transfer region, and a controller to control the bias supplying unit to supply different first to third biases to the transferring unit while at least first to third regions of the print medium pass through the transfer region, respectively.

    摘要翻译： 考虑到打印介质的姿势变化的图像形成装置及其控制方法来提高图像的质量。 图像形成装置可以包括其上形成有可见图像的转印单元，转印单元，用于形成转印区域，通过该转印区域将可见图像与转印单元一起转印到打印介质上，偏压供应单元提供偏置 转印单元，使得在转印区域中产生转印电场，以及控制器，用于控制偏压供应单元，以在打印介质的至少第一至第三区域通过时向转印单元提供不同的第一至第三偏压 转移区域。

    Plasma display panel and low temperature fabrication method thereof
    7.
    发明授权
    Plasma display panel and low temperature fabrication method thereof 有权
    等离子体显示面板及其低温制造方法

    公开(公告)号：US07868548B2

    公开(公告)日：2011-01-11

    申请号：US12010255

    申请日：2008-01-23

    申请人： Byeong-Soo Bae ,  Jeong-Hwan Kim

    发明人： Byeong-Soo Bae ,  Jeong-Hwan Kim

    IPC分类号： H01J17/49

    CPC分类号： H01J9/261 ,  H01J11/12 ,  H01J11/48 ,  H01J2209/264

    摘要： Disclosed is a plasma display panel fabricated by low temperature process at not more than 300° C. More particularly, the present invention provides a plasma display panel comprising at least one of a dielectric layer in an upper plate, another dielectric layer and barrier ribs in a lower plate, and a sealing material for the upper and lower plates which is prepared of a particular compound obtainable by curing organic monomer, organic oligomer or siloxane based oligomer having polymerizable functional groups; and, in addition, a method for fabrication of the plasma display panel.

    摘要翻译： 公开了一种通过低温工艺制造的不超过300℃的等离子体显示面板。更具体地，本发明提供了一种等离子体显示面板，其包括上板中的电介质层，另一电介质层和阻挡肋中的至少一个 下板和用于通过固化有机单体，具有可聚合官能团的有机低聚物或硅氧烷基低聚物获得的特定化合物制备的上板和下板的密封材料; 以及另外制造等离子体显示面板的方法。

    Microorganism producing 5'xanthylic acid
    8.
    发明授权
    Microorganism producing 5'xanthylic acid 有权
    微生物产生5'叶酸

    公开(公告)号：US07217558B2

    公开(公告)日：2007-05-15

    申请号：US10531675

    申请日：2003-12-10

    申请人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

    发明人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

    IPC分类号： C12N1/12 ,  C12N17/02 ,  C12N19/28 ,  C12N1/00

    CPC分类号： C12P19/32 ,  C12P19/40 ,  C12R1/15

    摘要： The invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 producing 5′-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to oligomycin. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N′-nitro-n-nitrosoguanidine(NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 of the present invention makes it possible to increase ATP reproducing activity for same period of fermentation and can accumulate 5′xanthylic acid in culture medium at a high yield and concentration rate.

    摘要翻译： 本发明涉及产生5'-戊酸的产氨棒杆菌CJXOL 0201 KCCM 10447。 更具体地，本发明涉及产氨杆菌CJXOL 0201 KCCM 10447，它是具有对寡霉素抗性的产氨棒杆菌KCCM10340的突变菌株。 为了获得具有增强的呼吸活性的突变菌株，本发明使用产氨杆菌KCCM 10340作为亲本菌株，并用UV辐射和N-甲基-N'-硝基-N-亚硝基胍（NTG）等突变衍生物按照 普通程序。 因此，本发明的产氨酸棒杆菌CJXOL 0201 KCCM 10447可以在相同的发酵期内增加ATP的再生活性，并且可以以高产率和浓度的速率在培养基中积累5'-戊酸。

    Apparatus and method for sensing defects in temperature sensors
    9.
    发明授权
    Apparatus and method for sensing defects in temperature sensors 失效

    公开(公告)号：US07018093B2

    公开(公告)日：2006-03-28

    申请号：US10191482

    申请日：2002-07-10

    申请人： Ki-Hwan Park ,  Jong-Sub Hwang ,  Jeong-Hwan Kim

    发明人： Ki-Hwan Park ,  Jong-Sub Hwang ,  Jeong-Hwan Kim

    IPC分类号： G01K15/00

    CPC分类号： G01K15/00

    摘要： In a temperature controlling apparatus for controlling temperature by using a temperature sensor, a defect state of the temperature sensor is sensed by sensing a change of specific resistance of the temperature sensor. A temperature value of the temperature sensor is detected at each unit time during exchanging of a chemical solution or stopping of a process in a chamber of the semiconductor fabricating process. A lowest temperature among the detected temperature values and a reference temperature predetermined to sense the change of the specific resistance of the temperature sensor, are compared with each other. When the lowest temperature deviates from the reference temperature, a defect of the temperature sensor is confirmed and a message indicative of a defect state and an alarm are generated.