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公开(公告)号:US20100034984A1
公开(公告)日:2010-02-11
申请号:US12456388
申请日:2009-06-16
申请人: Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
发明人: Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
IPC分类号: C23C16/511 , C23C16/00
CPC分类号: C23C16/511 , C23C16/274 , C23C16/279 , C30B25/105 , C30B25/16 , C30B29/04 , C30B35/00 , H01J37/32256 , H05H1/46
摘要: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
摘要翻译: 公开了新的和改进的微波等离子体辅助反应器,例如化学气相沉积(MPCVD)反应器。 所公开的微波等离子体辅助反应器在约10托至约760托的压力下工作。 所公开的微波等离子体辅助反应器包括在等离子体室的同轴空腔中的可移动的下滑动短路径和/或直径减小的导电平台。 对于特定应用,可以可变地选择较低的滑动短位置和/或导电平台直径,使得相对于常规的反应器,可以将反应器调整为在更大的衬底区域上操作,在更高的压力下操作,并且放电吸收的功率 具有增加的金刚石合成速率(克拉每小时)和增加的沉积均匀性的密度。
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公开(公告)号:US08316797B2
公开(公告)日:2012-11-27
申请号:US12456388
申请日:2009-06-16
申请人: Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
发明人: Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
IPC分类号: C23C16/00 , C23F1/00 , H01L21/306
CPC分类号: C23C16/511 , C23C16/274 , C23C16/279 , C30B25/105 , C30B25/16 , C30B29/04 , C30B35/00 , H01J37/32256 , H05H1/46
摘要: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
摘要翻译: 公开了新的和改进的微波等离子体辅助反应器,例如化学气相沉积(MPCVD)反应器。 所公开的微波等离子体辅助反应器在约10托至约760托的压力下工作。 所公开的微波等离子体辅助反应器包括在等离子体室的同轴空腔中的可移动的较低滑动短路径和/或直径减小的导电平台。 对于特定应用,可以可变地选择较低的滑动短位置和/或导电平台直径,使得相对于常规的反应器,可以将反应器调整为在更大的衬底区域上操作,在更高的压力下操作,并且放电吸收的功率 具有增加的金刚石合成速率(克拉每小时)和增加的沉积均匀性的密度。
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公开(公告)号:US20090239078A1
公开(公告)日:2009-09-24
申请号:US12381270
申请日:2009-03-10
申请人: Jes Asmussen , Timothy Grotjohn , Donnie Reinhard , Rahul Ramamurti , M. Kagan Yaran , Thomas Schuelke , Michael Becker , David King
发明人: Jes Asmussen , Timothy Grotjohn , Donnie Reinhard , Rahul Ramamurti , M. Kagan Yaran , Thomas Schuelke , Michael Becker , David King
CPC分类号: C30B25/105 , C23C16/274 , C23C16/278 , C23C16/4585 , C23C16/4586 , C30B25/08 , C30B25/12 , C30B29/04 , H01J37/32192 , Y10T428/30
摘要: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.
摘要翻译: 本发明涉及微波等离子体沉积工艺和用于生产金刚石,优选为单晶金刚石(SCD)的设备。 该方法和装置能够通过使用延伸装置来生产多层金刚石,以增加包含SCD衬底的保持器中的凹槽的长度和体积,因为沉积了金刚石层。 金刚石用于磨料,切割工具,宝石,电子基板,散热片,电化学电极,大功率辐射窗和电子束以及探测器。
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公开(公告)号:US09487858B2
公开(公告)日:2016-11-08
申请号:US12381270
申请日:2009-03-10
申请人: Jes Asmussen , Timothy Grotjohn , Donnie Reinhard , Rahul Ramamurti , M. Kagan Yaran , Thomas Schuelke , Michael Becker , David King
发明人: Jes Asmussen , Timothy Grotjohn , Donnie Reinhard , Rahul Ramamurti , M. Kagan Yaran , Thomas Schuelke , Michael Becker , David King
CPC分类号: C30B25/105 , C23C16/274 , C23C16/278 , C23C16/4585 , C23C16/4586 , C30B25/08 , C30B25/12 , C30B29/04 , H01J37/32192 , Y10T428/30
摘要: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.
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