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    Microwave plasma reactors
    2.
    发明申请
    Microwave plasma reactors 有权
    微波等离子体反应器

    公开(公告)号：US20100034984A1

    公开(公告)日：2010-02-11

    申请号：US12456388

    申请日：2009-06-16

    Applicant: Jes Asmussen ,  Timothy Grotjohn ,  Donnie K. Reinhard ,  Thomas Schuelke ,  M. Kagan Yaran ,  Kadek W. Hemawan ,  Michael Becker ,  David King ,  Yajun Gu ,  Jing Lu

    Inventor： Jes Asmussen ,  Timothy Grotjohn ,  Donnie K. Reinhard ,  Thomas Schuelke ,  M. Kagan Yaran ,  Kadek W. Hemawan ,  Michael Becker ,  David King ,  Yajun Gu ,  Jing Lu

    IPC: C23C16/511 ,  C23C16/00

    CPC classification number: C23C16/511 ,  C23C16/274 ,  C23C16/279 ,  C30B25/105 ,  C30B25/16 ,  C30B29/04 ,  C30B35/00 ,  H01J37/32256 ,  H05H1/46

    Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

    Abstract translation: 公开了新的和改进的微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。 所公开的微波等离子体辅助反应器在约10托至约760托的压力下工作。 所公开的微波等离子体辅助反应器包括在等离子体室的同轴空腔中的可移动的下滑动短路径和/或直径减小的导电平台。 对于特定应用，可以可变地选择较低的滑动短位置和/或导电平台直径，使得相对于常规的反应器，可以将反应器调整为在更大的衬底区域上操作，在更高的压力下操作，并且放电吸收的功率 具有增加的金刚石合成速率（克拉每小时）和增加的沉积均匀性的密度。

    Chlorine containing plasma etch method with enhanced sidewall passivation and attenuated microloading effect
    5.
    发明授权
    Chlorine containing plasma etch method with enhanced sidewall passivation and attenuated microloading effect 有权
    含氯等离子体蚀刻方法具有增强的侧壁钝化和减弱的微载荷效应

    公开(公告)号：US6017826A

    公开(公告)日：2000-01-25

    申请号：US166746

    申请日：1998-10-05

    Applicant: Mei-Sheng Zhou ,  Paul Kwok Keung Ho ,  Thomas Schuelke

    Inventor： Mei-Sheng Zhou ,  Paul Kwok Keung Ho ,  Thomas Schuelke

    IPC: H01L21/3213 ,  H01L21/00

    CPC classification number: H01L21/32136

    Abstract: A method for forming a patterned layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a blanket chlorine containing plasma etchable layer. There is then formed upon the blanket chlorine containing plasma etchable layer a blanket hard mask layer. There is then formed upon the blanket hard mask layer a patterned photoresist layer. There is then etched the blanket hard mask layer to form a patterned hard mask layer while employing a first plasma etch method in conjunction with the patterned photoresist layer as a first etch mask layer. There is then etched the blanket chlorine containing plasma etchable layer to form a patterned chlorine containing plasma etchable layer while employing a second plasma etch method in conjunction with at least the patterned hard mask layer as a second etch mask layer. The second plasma etch method employs a second etchant gas composition which upon plasma activation forms a chlorine containing etchant species and a sidewall passivation layer forming species. The patterned chlorine containing plasma etchable layer has incident to the second plasma etch method a sidewall passivation layer formed upon a sidewall of the patterned chlorine containing plasma etchable layer. Finally, there is then stripped from the sidewall of the patterned chlorine containing plasma etchable layer the sidewall passivation layer while sequentially oxidizing the sidewall of the patterned chlorine containing plasma etchable layer to form an oxidized chlorine containing plasma etchable material sidewall layer upon a partially oxidized patterned chlorine containing plasma etchable layer while employing a third plasma etch method. The third plasma etch method employs a third etchant gas composition which upon plasma activation forms an oxygen containing oxidizing species.

    Abstract translation: 一种在微电子制造中形成图案层的方法。 首先提供基板。 然后在衬底上形成含有氯气的等离子体可蚀刻层。 然后在包覆的含氯等离子体可蚀刻层上形成橡皮布硬掩模层。 然后在橡皮布硬掩模层上形成图案化的光致抗蚀剂层。 然后蚀刻橡皮布硬掩模层以形成图案化的硬掩模层，同时采用第一等离子体蚀刻方法结合图案化的光致抗蚀剂层作为第一蚀刻掩模层。 然后蚀刻含有氯的等离子体可蚀刻层，以形成图案化的含氯等离子体可蚀刻层，同时采用第二等离子体蚀刻方法结合至少图案化的硬掩模层作为第二蚀刻掩模层。 第二等离子体蚀刻方法使用第二蚀刻剂气体组合物，其在等离子体激活时形成含氯蚀刻剂物质和形成侧壁钝化层的物质。 图案化的含氯等离子体可蚀刻层已经入射到第二等离子体蚀刻方法，形成在图案化含氯等离子体可蚀刻层的侧壁上的侧壁钝化层。 最后，然后从图案化的含氯等离子体蚀刻层的侧壁剥离侧壁钝化层，同时依次氧化图案化的含氯等离子体可蚀刻层的侧壁，以在部分氧化的图案化层上形成含氧氯化等离子体可蚀刻材料侧壁层 含氯等离子体可蚀刻层，同时采用第三等离子体蚀刻方法。 第三等离子体蚀刻方法采用第三蚀刻剂气体组合物，其在等离子体激活时形成含氧氧化物质。

    Method of shallow trench isolation
    6.
    发明授权
    Method of shallow trench isolation 失效
    浅沟槽隔离方法

    公开(公告)号：US5930646A

    公开(公告)日：1999-07-27

    申请号：US169435

    申请日：1998-10-09

    Applicant: Henry Gerung ,  Igor V. Peidous ,  Thomas Schuelke ,  Andrew Kuswatno

    Inventor： Henry Gerung ,  Igor V. Peidous ,  Thomas Schuelke ,  Andrew Kuswatno

    IPC: H01L21/3105 ,  H01L21/762 ,  H01L21/76

    CPC classification number: H01L21/31053 ,  H01L21/31051 ,  H01L21/76229

    Abstract: The invention is an improved process for forming isolations of uniform thickness in narrow and wide trenches. The process begins by forming a pad layer on a semiconductor substrate. A first barrier layer is formed on the pad layer. The first barrier layer and pad layer are patterned forming openings, thereby exposing the substrate surface. The substrate is then etched through the openings to form shallow trenches in the substrate. The trenches generally falling into two ranges of width: narrow trenches having widths in the range between 0.3 .mu.m and 1.0 .mu.m; and wide trenches having widths greater than 1.0 .mu.m. A thin oxide film is grown on the sidewalls and bottoms of the trenches. A gap-fill dielectric layer is formed on the thin oxide film. A polysilicon layer is grown on the gap-fill dielectric layer. The polysilicon layer acts as a stop during CMP, providing additional protection of the gap-fill dielectric layer in the wide trenches. A planarizing material layer is formed on the polysilicon layer. The planarizing material layer, polysilicon layer and gap-fill dielectric layer are planarized to the level of the first barrier layer using chemical mechanical polishing (CMP). The residual planarizing material is then stripped. The polysilicon layer is oxidized forming a novel second dielectric oxide layer in an oxidizing atmosphere. The dielectric layer is densified, preferably in the same oxidizing atmosphere, forming an isolation layer with uniform thickness in the narrow trenches and the wide trenches. The stress developed during conversion of the polysilicon layer to a novel second dielectric oxide layer compensates for the stress due to densification of the dielectric layer.

    Abstract translation: 本发明是在狭窄和宽沟槽中形成均匀厚度的隔离的改进方法。 该过程开始于在半导体衬底上形成焊盘层。 在衬垫层上形成第一阻挡层。 第一阻挡层和衬垫层被图案化形成开口，从而暴露衬底表面。 然后通过开口蚀刻衬底，以在衬底中形成浅沟槽。 沟槽一般落在两个宽度范围内：宽度在0.3μm至1.0μm之间的窄沟槽; 宽度大于1.0μm的宽沟槽。 在沟槽的侧壁和底部生长薄氧化膜。 在薄氧化膜上形成间隙填充电介质层。 在间隙填充介电层上生长多晶硅层。 多晶硅层在CMP期间用作停止，为宽沟槽中的间隙填充电介质层提供额外的保护。 平坦化材料层形成在多晶硅层上。 使用化学机械抛光（CMP）将平坦化材料层，多晶硅层和间隙填充介电层平坦化为第一势垒层的水平。 然后剥离剩余的平坦化材料。 多晶硅层被氧化，在氧化气氛中形成新的第二电介质氧化物层。 电介质层被致密化，优选在相同的氧化气氛中，在窄沟槽和宽沟槽中形成均匀厚度的隔离层。 在将多晶硅层转化为新颖的第二电介质氧化物层期间产生的应力补偿了由于介电层的致密化引起的应力。

    COATING BASED ON DIAMOND-LIKE CARBON
    7.
    发明申请
    COATING BASED ON DIAMOND-LIKE CARBON 有权
    基于金刚石碳的涂料

    公开(公告)号：US20130045367A1

    公开(公告)日：2013-02-21

    申请号：US13548550

    申请日：2012-07-13

    Applicant: Hans-Joachim Scheibe ,  Thomas Schuelke ,  Lars Haubold ,  Michael Becker ,  Yaran Mahmut

    Inventor： Hans-Joachim Scheibe ,  Thomas Schuelke ,  Lars Haubold ,  Michael Becker ,  Yaran Mahmut

    IPC: B32B3/30 ,  B32B7/02 ,  C23C14/32 ,  B32B9/04

    CPC classification number: C23C14/0021 ,  C23C14/0605 ,  C23C14/325 ,  Y10T428/24529 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

    Abstract: A coating based on diamond-like is formed from a plurality of films of diamond-like carbon formed alternatingly over one another and in this respect a film in which no portion or only a much lower portion of doped fluorine is contained. A film in which fluorine or at least fluorine with a higher portion than the film arranged thereunder or thereabove are formed alternatingly over one another. The coating could be manufactured by using a target of pure carbon. Films are deposited on a surface of a substrate by means of a PVD process, with the portion of fluorine contained in doped form. Films are formed alternately being varied by varying a supplied volume flow of a fluorine/carbon compound or sulfur/fluorine compound as a precursor.

    Abstract translation: 基于金刚石样的涂层由多个彼此交替形成的类金刚石碳膜形成，并且在这方面形成其中不含有部分或仅含有较低部分掺杂氟的膜。 在其上交替地形成有氟或至少具有比其下面布置的膜更高的氟的膜的膜。 可以通过使用纯碳的目标来制造涂层。 通过PVD工艺将膜沉积在衬底的表面上，其中部分氟以掺杂形式包含。 通过改变作为前体的氟/碳化合物或硫/氟化合物的供给体积流动来交替地形成膜。

    Coating based on diamond-like carbon
    9.
    发明授权
    Coating based on diamond-like carbon 有权
    基于类金刚石的涂层

    公开(公告)号：US08911868B2

    公开(公告)日：2014-12-16

    申请号：US13548550

    申请日：2012-07-13

    Applicant: Hans-Joachim Scheibe ,  Thomas Schuelke ,  Lars Haubold ,  Michael Becker ,  Yaran Mahmut

    Inventor： Hans-Joachim Scheibe ,  Thomas Schuelke ,  Lars Haubold ,  Michael Becker ,  Yaran Mahmut

    IPC: C23C14/00 ,  C23C14/06 ,  C23C14/32

    CPC classification number: C23C14/0021 ,  C23C14/0605 ,  C23C14/325 ,  Y10T428/24529 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

    Abstract: A coating based on diamond-like is formed from a plurality of films of diamond-like carbon formed alternatingly over one another and in this respect a film in which no portion or only a much lower portion of doped fluorine is contained. A film in which fluorine or at least fluorine with a higher portion than the film arranged thereunder or thereabove are formed alternatingly over one another. The coating could be manufactured by using a target of pure carbon. Films are deposited on a surface of a substrate by means of a PVD process, with the portion of fluorine contained in doped form. Films are formed alternately being varied by varying a supplied volume flow of a fluorine/carbon compound or sulfur/fluorine compound as a precursor.

    Abstract translation: 基于金刚石样的涂层由多个彼此交替形成的类金刚石碳膜形成，并且在这方面形成其中不含有部分或仅含有较低部分掺杂氟的膜。 在其上交替地形成有氟或至少具有比其下面布置的膜更高的氟的膜的膜。 可以通过使用纯碳的目标来制造涂层。 通过PVD工艺将膜沉积在衬底的表面上，其中部分氟以掺杂形式包含。 通过改变作为前体的氟/碳化合物或硫/氟化合物的供给体积流动来交替地形成膜。

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