摘要:
The present invention discloses an on-line identifying method of hand-written Arabic letter. The advantage of the present invention is that the multilayer coarse classification algorithm based on the local characteristic of Arabic letter fully utilize the various local characteristics of Arabic letter, obtain the first candidate letter aggregation matching with the inputted hand-written Arabic letter according to the first level coarse classification formed by the stroke number of letter, and then obtain the second candidate letter aggregation matching with inputted hand-written Arabic letter according to the other local characteristics and the first candidate letter aggregation. The application of the algorithm enables that the inputted hand-written Arabic letter only need to match with the standard letter stored in the predetermined letter library and the corresponding standard letters of the second candidate letter aggregation.
摘要:
The present invention discloses an identifying method of hand-written Latin letter. The present invention considers many hand-written styles of Latin letter, extract many stable characteristics of Latin letter of different hand-written styles, and classify the Latin letter aggregation each time with one characteristic, so that the whole standard Latin letter aggregation is classified into many small Latin letter aggregations with intersection to be the coarse classification candidate letter aggregations to be identified. When identifying the inputted hand-written Latin letter, obtain the coarse classification candidate letter aggregation that matches with the characteristics of the inputted hand-written Latin letter. Many stable characteristics ensure the identifying rate. The multilayer coarse classification candidate letter aggregations regulate the searching path and increase the identifying speed.
摘要:
The present invention discloses an identifying method of hand-written Latin letter. The present invention considers many hand-written styles of Latin letter, extract many stable characteristics of Latin letter of different hand-written styles, and classify the Latin letter aggregation each time with one characteristic, so that the whole standard Latin letter aggregation is classified into many small Latin letter aggregations with intersection to be the coarse classification candidate letter aggregations to be identified. When identifying the inputted hand-written Latin letter, obtain the coarse classification candidate letter aggregation that matches with the characteristics of the inputted hand-written Latin letter. Many stable characteristics ensure the identifying rate. The multilayer coarse classification candidate letter aggregations regulate the searching path and increase the identifying speed.
摘要:
The present invention discloses an on-line identifying method of hand-written Arabic letter. The advantage of the present invention is that the multilayer coarse classification algorithm based on the local characteristic of Arabic letter fully utilize the various local characteristics of Arabic letter, obtain the first candidate letter aggregation matching with the inputted hand-written Arabic letter according to the first level coarse classification formed by the stroke number of letter, and then obtain the second candidate letter aggregation matching with inputted hand-written Arabic letter according to the other local characteristics and the first candidate letter aggregation. The application of the algorithm enables that the inputted hand-written Arabic letter only need to match with the standard letter stored in the predetermined letter library and the corresponding standard letters of the second candidate letter aggregation.
摘要:
In certain embodiments, the disclosure relates to methods of treating or preventing a PGAM1 mediated condition such as cancer or tumor growth comprising administering an effective amount of PGAM1 inhibitor, for example, an anthracene-9,10-dione derivative to a subject in need thereof. In certain embodiments, the disclosure relates to methods of treating or preventing cancer, such as lung cancer, head and neck cancer, and leukemia, comprising administering a therapeutically effective amount of a pharmaceutical composition comprising a compound disclosed herein or pharmaceutically acceptable salt to a subject in need thereof.
摘要:
A field-effect transistor includes a first gate, a second gate held at a substantially fixed potential in a cascode configuration, and a semiconductor channel. The semiconductor channel has an enhancement mode portion and a depletion mode portion. The enhancement mode portion is gated to be turned on and off by the first gate, and has been modified to operate in enhancement mode. The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.
摘要:
Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET). In one aspect, metal-2DEG Schottky tunnel junctions can be employed in group III-Nitride field-effect devices that enable normally-off operation, large breakdown voltage, low leakage current, and high on/off current ratio. As a further advantage, AlGaN/GaN metal-2DEG TJ-FETs are disclosed that can be fabricated in a lateral configuration and/or a vertical configuration. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.
摘要:
The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps. In the present invention, proper test curves are successively selected according to model equations, and various kinds of parameters are successively determined, thereby accurately and effectively extracting the DC parameters of the BSIMSOI4 model.
摘要:
A power module includes a first bobbin, a primary winding coil, a circuit board assembly and a first magnetic core assembly. The primary winding coil is wound around the first bobbin. The circuit board assembly includes a printed circuit board, a second winding structure, at least one current-sensing element, a rectifier circuit and an electrical connector. The second winding structure has an output terminal. The current-sensing element includes a first conductor. The first conductor is a conductive sheet. A first end of the first conductor is in contact with the output terminal of the second winding structure. A second end of the first conductor is connected to the rectifier circuit. The primary winding coil is aligned with the second winding structure of the circuit board assembly and arranged within the first magnetic core assembly. The primary winding coil and the electrical connector are electrically connected with a system board.
摘要:
A hybrid orientation accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of p-type Si(110) and n-type Si(100), respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. The device structure according to the prevent invention is quite simple, compact and highly integrated. In an accumulation mode, current flows through the overall racetrack-shaped channel. The disclosed device results in high carrier mobility. Meanwhile polysilicon gate depletion and short channel effects are prevented, and threshold voltage is increased.