Methods and apparatus for cleaning semiconductor wafers
    1.
    发明授权
    Methods and apparatus for cleaning semiconductor wafers 有权
    用于清洁半导体晶片的方法和设备

    公开(公告)号:US09595457B2

    公开(公告)日:2017-03-14

    申请号:US13133826

    申请日:2008-12-12

    IPC分类号: H01L21/67 B08B3/12

    摘要: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

    摘要翻译: 一种使用超声波超声波装置清洗半导体衬底的方法,包括通过使用卡盘保持半导体衬底,将超声波器件邻近半导体衬底定位,在半导体衬底上注入化学液体,并在半导体衬底和 超声波/超声波装置,在清洁过程中,对于卡盘的每次旋转,改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转,间隙可以增加或减小0.5λ/ N,其中λ是超/兆声波的波长,N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中,其中λ是超/兆声波的波长,n是从1开始的整数。

    Methods and Apparatus for Cleaning Semiconductor Wafers
    2.
    发明申请
    Methods and Apparatus for Cleaning Semiconductor Wafers 有权
    用于清洁半导体晶片的方法和装置

    公开(公告)号:US20110290277A1

    公开(公告)日:2011-12-01

    申请号:US13133826

    申请日:2008-12-12

    IPC分类号: B08B3/12

    摘要: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

    摘要翻译: 一种使用超声波超声波装置清洗半导体衬底的方法,包括通过使用卡盘保持半导体衬底,将超声波器件邻近半导体衬底定位,在半导体衬底上注入化学液体,并在半导体衬底和 超声波/超声波装置,在清洁过程中,对于卡盘的每次旋转,改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转,间隙可以增加或减小0.5λ/ N,其中λ是超/兆声波的波长,N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中,其中λ是超/兆声波的波长,n是从1开始的整数。

    Methods and Apparatus for Cleaning Semiconductor Wafers
    4.
    发明申请
    Methods and Apparatus for Cleaning Semiconductor Wafers 有权
    用于清洁半导体晶片的方法和装置

    公开(公告)号:US20120097195A1

    公开(公告)日:2012-04-26

    申请号:US13262264

    申请日:2009-03-31

    IPC分类号: B08B3/00

    摘要: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.

    摘要翻译: 一种使用超声波超声波装置清洗半导体衬底的方法,包括通过使用卡盘保持半导体衬底,将超声波器件邻近半导体衬底定位,在半导体衬底上注入化学液体,并在半导体衬底和 超声波/超声波装置,通过顺时针旋转半导体衬底或超/超声波装置,顺时针或顺时针方向计数,在清洁过程中,通过卡盘的每次旋转来改变半导体衬底和超/超声波装置之间的间隙。