公开(公告)号：US09492852B2

公开(公告)日：2016-11-15

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00 ,  B08B3/12 ,  H01L21/67

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针或逆时针转动半导体衬底或超/超声波装置，在清洁过程期间，为了卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US20120097195A1

公开(公告)日：2012-04-26

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针旋转半导体衬底或超/超声波装置，顺时针或顺时针方向计数，在清洁过程中，通过卡盘的每次旋转来改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US09595457B2

公开(公告)日：2017-03-14

申请号：US13133826

申请日：2008-12-12

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

IPC分类号： H01L21/67 ,  B08B3/12

CPC分类号： H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  B08B3/123 ,  H01L21/02063 ,  H01L21/67023 ,  H01L21/6708

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转，间隙可以增加或减小0.5λ/ N，其中λ是超/兆声波的波长，N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中，其中λ是超/兆声波的波长，n是从1开始的整数。

公开(公告)号：US20110290277A1

公开(公告)日：2011-12-01

申请号：US13133826

申请日：2008-12-12

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

IPC分类号： B08B3/12

CPC分类号： H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  B08B3/123 ,  H01L21/02063 ,  H01L21/67023 ,  H01L21/6708

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转，间隙可以增加或减小0.5λ/ N，其中λ是超/兆声波的波长，N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中，其中λ是超/兆声波的波长，n是从1开始的整数。