公开(公告)号：US20110290277A1

公开(公告)日：2011-12-01

申请号：US13133826

申请日：2008-12-12

Applicant: Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

Inventor： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

IPC: B08B3/12

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  B08B3/123 ,  H01L21/02063 ,  H01L21/67023 ,  H01L21/6708

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract translation: 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转，间隙可以增加或减小0.5λ/ N，其中λ是超/兆声波的波长，N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中，其中λ是超/兆声波的波长，n是从1开始的整数。

公开(公告)号：US20110177692A1

公开(公告)日：2011-07-21

申请号：US13059814

申请日：2008-08-20

Applicant: Jian Wang ,  Zhaowei Jia ,  Junping Wu ,  Liangzhi Xie ,  Hui Wang

Inventor： Jian Wang ,  Zhaowei Jia ,  Junping Wu ,  Liangzhi Xie ,  Hui Wang

IPC: H01L21/465 ,  C25D19/00

CPC classification number: H01L21/67069 ,  H01L21/02074 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/67075

Abstract: This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.

Abstract translation: 本发明涉及通过集成无应力电化学铜抛光（SFP）的半导体制造工艺，去除在SFP工艺期间形成的氧化钽或氧化钛和XeF 2气相蚀刻阻挡层Ta / TaN或Ti / TiN工艺的方法和装置 。 首先，通过SFP抛光电镀铜膜的至少一部分。 其次，在SFP工艺期间形成的阻挡金属氧化物膜被蚀刻剂蚀刻掉。 最后，用XeF2气相蚀刻除去阻挡层Ta / TaN或Ta / TiN。 因此该装置由三个子系统组成：无应力铜电解抛光系统，阻挡层氧化膜去除系统和阻挡层Ta / TaN或Ti / TiN气相蚀刻系统。

公开(公告)号：US09492852B2

公开(公告)日：2016-11-15

申请号：US13262264

申请日：2009-03-31

Applicant: Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

Inventor： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC: B08B3/00 ,  B08B3/12 ,  H01L21/67

CPC classification number: H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

Abstract translation: 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针或逆时针转动半导体衬底或超/超声波装置，在清洁过程期间，为了卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US08598039B2

公开(公告)日：2013-12-03

申请号：US13059814

申请日：2008-08-20

Applicant: Jian Wang ,  Zhaowei Jia ,  Junping Wu ,  Liangzhi Xie ,  Hui Wang

Inventor： Jian Wang ,  Zhaowei Jia ,  Junping Wu ,  Liangzhi Xie ,  Hui Wang

IPC: H01L21/302

CPC classification number: H01L21/67069 ,  H01L21/02074 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/67075

Abstract: This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.

Abstract translation: 本发明涉及通过集成无应力电化学铜抛光（SFP）的半导体制造工艺，去除在SFP工艺期间形成的氧化钽或氧化钛和XeF 2气相蚀刻阻挡层Ta / TaN或Ti / TiN工艺的方法和装置 。 首先，通过SFP抛光电镀铜膜的至少一部分。 其次，在SFP工艺期间形成的阻挡金属氧化物膜被蚀刻剂蚀刻掉。 最后，用XeF2气相蚀刻除去阻挡层Ta / TaN或Ta / TiN。 因此该装置由三个子系统组成：无应力铜电解抛光系统，阻挡层氧化膜去除系统和阻挡层Ta / TaN或Ti / TiN气相蚀刻系统。

公开(公告)号：US20120097195A1

公开(公告)日：2012-04-26

申请号：US13262264

申请日：2009-03-31

Applicant: Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

Inventor： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC: B08B3/00

CPC classification number: H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.

Abstract translation: 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针旋转半导体衬底或超/超声波装置，顺时针或顺时针方向计数，在清洁过程中，通过卡盘的每次旋转来改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US09595457B2

公开(公告)日：2017-03-14

申请号：US13133826

申请日：2008-12-12

Applicant: Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

Inventor： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

IPC: H01L21/67 ,  B08B3/12

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  B08B3/123 ,  H01L21/02063 ,  H01L21/67023 ,  H01L21/6708

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract translation: 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转，间隙可以增加或减小0.5λ/ N，其中λ是超/兆声波的波长，N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中，其中λ是超/兆声波的波长，n是从1开始的整数。