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    Semiconductor nanocrystal quantum dots and metallic nanocrystals as UV blockers and colorants for suncreens and/or sunless tanning compositions
    4.
    发明申请
    Semiconductor nanocrystal quantum dots and metallic nanocrystals as UV blockers and colorants for suncreens and/or sunless tanning compositions 审中-公开
    半导体纳米晶体量子点和金属纳米晶体作为UV阻挡剂和防晒剂和/或无阳光鞣制组合物的着色剂

    公开(公告)号：US20050265935A1

    公开(公告)日：2005-12-01

    申请号：US10857583

    申请日：2004-05-28

    申请人： Jennifer Hollingsworth ,  Victor Klimov ,  Polina Anikeeva

    发明人： Jennifer Hollingsworth ,  Victor Klimov ,  Polina Anikeeva

    IPC分类号： A61K8/02 ,  A61K8/23 ,  A61K8/25 ,  A61Q17/04 ,  A61K7/42

    CPC分类号： B82Y5/00 ,  A61K8/02 ,  A61K8/23 ,  A61K8/25 ,  A61K2800/413 ,  A61K2800/52 ,  A61Q17/04

    摘要： The present invention is directed to photostable sunscreen and/or artificial tanning compositions including quantum dot nanocrystals of a material selected from semiconductor nanocrystals, modified semiconductor nanocrystals, multicomponent semiconductor/semiconductor nanocrystals, and hybrid semiconductor/metal nanocrystals, the quantum dot nanocrystals having an absorption band gap occurring at wavelengths higher than 400 nm whereby the quantum dot nanocrystals have substantial broadband absorption properties of ultraviolet light at wavelengths across the range of both UV-A (320-400 nm) and UV-B (280-320 nm), and a dermatologically acceptable carrier for the quantum dot nanocrystals. The present invention is further directed to photostable sunscreen and/or artificial tanning compositions including a material selected from metallic nanocrystals, multicomponent metal/metal nanocrystals, and alloyed metal nanocrystals, the metallic material having a surface plasmon resonance occurring sufficiently into the visible or infrared spectral region whereby broad absorption features due to electronic transitions, the broad absorption features located at higher energies, provide substantial broadband absorption properties of ultraviolet light at wavelengths across the range of both UV-A (320-400 nm) and UV-B (280-320 nm), and a dermatologically acceptable carrier for the metallic material.

    摘要翻译： 本发明涉及包含选自半导体纳米晶体，改性半导体纳米晶体，多组分半导体/半导体纳米晶体和混合半导体/金属纳米晶体的材料的量子点纳米晶体的光稳定防晒剂和/或人造鞣制组合物，所述量子点纳米晶体具有吸收 发生在高于400nm的波长处的带隙，由此量子点纳米晶体在UV-A（320-400nm）和UV-B（280-320nm）的范围内的波长处具有相当大的紫外光的宽带吸收特性，以及 用于量子点纳米晶体的皮肤病学可接受的载体。 本发明还涉及包含选自金属纳米晶体，多组分金属/金属纳米晶体和合金化金属纳米晶体的材料的光稳定性防晒剂和/或人造鞣制组合物，所述金属材料具有充分进入可见光或红外光谱的表面等离子体共振 区域，由于电子跃迁的广泛吸收特征，位于较高能量的宽吸收特征，在UV-A（320-400nm）和UV-B（280- 400nm）范围内的波长处提供紫外光的实质宽带吸收特性， 320nm），以及用于金属材料的皮肤病学可接受的载体。