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公开(公告)号：US20080074050A1
公开(公告)日：2008-03-27
申请号：US11750824
申请日：2007-05-18
CPC分类号： C09K11/565 , H05B33/14
摘要： A light emitting device includes an electroluminescent material and semiconductor nanocrystals. The semiconductor nanocrystals accept energy from the electroluminescent material and emit light.
摘要翻译： 发光器件包括电致发光材料和半导体纳米晶体。 半导体纳米晶体从电致发光材料接受能量并发光。
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公开(公告)号：US20100265734A1
公开(公告)日：2010-10-21
申请号：US12670388
申请日：2008-07-23
CPC分类号： G02B6/02 , B05D3/12 , G02B6/001 , G02B6/004 , G02B6/005 , G02B6/0229 , G02B6/26 , G02B2006/1213
摘要： An optical structure can include a nanocrystal on a surface of an optical waveguide in a manner to couple the nanocrystal to the optical field of light propagating through the optical waveguide to generate an emission from the nanocrystal. The structure can be configured to restrict propagation of the emission from the nanocrystal along the waveguide.
摘要翻译： 光学结构可以包括在光波导表面上的纳米晶体，以将纳米晶体耦合到通过光波导传播的光的光场以产生来自纳米晶体的发射。 该结构可以被配置为限制沿着波导从纳米晶体发射的传播。
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公开(公告)号：US20050258418A1
公开(公告)日：2005-11-24
申请号：US11071244
申请日：2005-03-04
申请人： Jonathan Steckel , John Zimmer , Seth Coe-Sullivan , Nathan Stott , Vladimir Bulovic , Moungi Bawendi
发明人： Jonathan Steckel , John Zimmer , Seth Coe-Sullivan , Nathan Stott , Vladimir Bulovic , Moungi Bawendi
CPC分类号： C01G9/08 , B82Y20/00 , B82Y30/00 , C01G11/02 , C01P2004/04 , C01P2004/64 , C01P2004/84 , C01P2006/40 , C09K11/02 , C09K11/565 , H01L33/18 , H01L33/20 , H05B33/14
摘要： A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.
摘要翻译： 半导体纳米晶体包括包括第一半导体材料的芯和包括第二半导体材料的外涂层。 纳米晶体的单分散群体在具有高量子效率的窄波长范围内发射蓝光。
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公开(公告)号：US20110057125A1
公开(公告)日：2011-03-10
申请号：US12673728
申请日：2008-08-14
CPC分类号： C09K11/06 , C09K11/025 , C09K11/565 , C09K11/883 , C09K2211/10
摘要： A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the rust moiety can be a semiconductor nanocrystal.
摘要翻译： 组合物可以包括能够被激发成激发态的第一部分和能够接受来自第一部分的激发态能的第二部分。 第二部分在激发时能够发射具有15nm或更小的FWHM的光。 第二部分可以是J-聚集体，并且锈部分可以是半导体纳米晶体。
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公开(公告)号：US20050072989A1
公开(公告)日：2005-04-07
申请号：US10958659
申请日：2004-10-06
IPC分类号： G11C13/02 , G11C16/04 , H01L20060101 , H01L21/28 , H01L29/423 , H01L29/788 , H01L31/0336
CPC分类号： G11C13/02 , B82Y10/00 , B82Y30/00 , G11C16/0466 , G11C2213/12 , G11C2213/18 , G11C2213/53 , G11C2216/06 , H01L21/28273 , H01L29/127 , H01L29/2203 , H01L29/42332 , H01L29/7881
摘要： A memory device can include an active layer that has a selectable lateral conductivity. The layer can include a plurality of nanoparticles.
摘要翻译： 存储器件可以包括具有可选侧向电导率的有源层。 该层可以包括多个纳米颗粒。
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公开(公告)号：US20060196375A1
公开(公告)日：2006-09-07
申请号：US11253612
申请日：2005-10-20
IPC分类号： B41K1/38
CPC分类号： H05B33/10 , B41J2/0057 , B41M1/02 , B41M3/003 , B41M5/0256 , B82Y20/00 , B82Y30/00 , H01L21/6715 , H01L51/5012 , H01L51/502 , H01L51/56 , H05B33/145
摘要： A method of transferring a material to a substrate includes selectively depositing the material on a surface of an applicator and contacting the surface of the applicator to the substrate. The material can form a pattern on the surface of the applicator. The pattern can be preserved when the material is transferred to the substrate. The material can be deposited on the applicator by ink jet printing.
摘要翻译： 将材料转移到基底的方法包括将材料选择性地沉积在施加器的表面上并将施加器的表面接触到基底。 该材料可以在施用器的表面上形成图案。 当材料转移到基底时，可以保留图案。 该材料可以通过喷墨打印沉积在涂布器上。
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公开(公告)号：US08480927B2
公开(公告)日：2013-07-09
申请号：US12673728
申请日：2008-08-14
CPC分类号： C09K11/06 , C09K11/025 , C09K11/565 , C09K11/883 , C09K2211/10
摘要： A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.
摘要翻译： 组合物可以包括能够被激发成激发态的第一部分和能够接受来自第一部分的激发态能的第二部分。 第二部分在激发时能够发射具有15nm或更小的FWHM的光。 第二部分可以是J-聚集体，第一部分可以是半导体纳米晶体。
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公开(公告)号：US20080001167A1
公开(公告)日：2008-01-03
申请号：US11253595
申请日：2005-10-20
IPC分类号： H01L29/74
CPC分类号： H05B33/10 , B41J2/0057 , B41M1/02 , B41M3/003 , B41M5/0256 , B82Y20/00 , B82Y30/00 , H01L21/6715 , H01L51/5012 , H01L51/502 , H01L51/56 , H05B33/145
摘要： A light emitting device includes a semiconductor nanocrystal in a layer. The layer can be a monolayer of semiconductor nanocrystals. The monolayer can form a pattern on a substrate.
摘要翻译： 发光器件包括层中的半导体纳米晶体。 该层可以是单层半导体纳米晶体。 单层可以在基底上形成图案。
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公开(公告)号：US20070103068A1
公开(公告)日：2007-05-10
申请号：US11354185
申请日：2006-02-15
申请人： Moungi Bawendi , Vladimir Bulovic , Seth Coe-Sullivan , Jean-Michel Caruge , Jonathan Steckel , Jonathan Halpert
发明人： Moungi Bawendi , Vladimir Bulovic , Seth Coe-Sullivan , Jean-Michel Caruge , Jonathan Steckel , Jonathan Halpert
CPC分类号： H01L33/14 , B65D71/36 , B65D81/261 , B65D2571/00141 , B65D2571/0045 , B65D2571/00574 , B65D2571/0066 , B65D2571/00728 , B82Y20/00 , B82Y30/00 , H01L27/156 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/26 , H01L33/42 , H01L51/5012 , H01L51/502 , H01L51/5048 , H01L51/5096 , H01L2933/0041
摘要： A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
摘要翻译： 发光器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。
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公开(公告)号：US20060182970A1
公开(公告)日：2006-08-17
申请号：US11399414
申请日：2006-04-07
申请人： Moungi Bawendi , Frederic Mikulec , Sungjee Kim
发明人： Moungi Bawendi , Frederic Mikulec , Sungjee Kim
CPC分类号： C09K11/883 , B82Y20/00 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2004/80 , C01P2004/86 , C01P2006/60 , C07F9/224 , C07F9/5304 , C09K11/02 , C09K11/565 , C09K11/885 , C09K11/892 , C30B7/00 , C30B7/14 , C30B29/46 , C30B29/48 , C30B29/60 , C30B29/605 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/813 , Y10S977/824 , Y10S977/832 , Y10T428/12035 , Y10T428/12049 , Y10T428/12181 , Y10T428/12986 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.
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