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    MEMORY RESISTOR HAVING MULTI-LAYER ELECTRODES
    1.
    发明申请
    MEMORY RESISTOR HAVING MULTI-LAYER ELECTRODES 有权
    具有多层电极的记忆电阻

    公开(公告)号：US20120120714A1

    公开(公告)日：2012-05-17

    申请号：US13387063

    申请日：2010-02-08

    申请人： Jianhua Yang ,  Wei Wu ,  Gilberto Ribeiro

    发明人： Jianhua Yang ,  Wei Wu ,  Gilberto Ribeiro

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C13/0002 ,  H01L45/1253 ,  H01L45/146

    摘要： Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.

    摘要翻译： 提供了与存储电阻相关的方法和方法。 忆阻器包括两个多层电极和活性材料层。 一个多层电极与活性材料层形成欧姆接触区域。 其他多层电极与活性物质层形成肖特基势垒层。 在施加的电场的影响下，活性物质层经受氧空位轮廓重构。 因此，忆阻器的电阻可以通过施加的编程电压进行调节，并且在编程事件之间是非易失性的。

    Memory resistor having multi-layer electrodes
    2.
    发明授权
    Memory resistor having multi-layer electrodes 有权
    具有多层电极的记忆电阻

    公开(公告)号：US08737113B2

    公开(公告)日：2014-05-27

    申请号：US13387063

    申请日：2010-02-08

    申请人： Jianhua Yang ,  Wei Wu ,  Gilberto Ribeiro

    发明人： Jianhua Yang ,  Wei Wu ,  Gilberto Ribeiro

    IPC分类号： G11C11/00

    CPC分类号： H01L45/08 ,  G11C13/0002 ,  H01L45/1253 ,  H01L45/146

    摘要： Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.

    摘要翻译： 提供了与存储电阻相关的方法和方法。 忆阻器包括两个多层电极和活性材料层。 一个多层电极与活性材料层形成欧姆接触区域。 其他多层电极与活性物质层形成肖特基势垒层。 在施加的电场的影响下，活性物质层经受氧空位轮廓重构。 因此，忆阻器的电阻可以通过施加的编程电压进行调节，并且在编程事件之间是非易失性的。

    Nanoscale switching devices with partially oxidized electrodes
    3.
    发明授权
    Nanoscale switching devices with partially oxidized electrodes 有权
    具有部分氧化电极的纳米开关器件

    公开(公告)号：US09024285B2

    公开(公告)日：2015-05-05

    申请号：US13636814

    申请日：2010-04-19

    申请人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    发明人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/1253 ,  H01L45/146 ,  Y10S438/90

    摘要： A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

    摘要翻译： 提供了纳米尺度的开关装置。 该装置包括：纳米级宽度的第一电极; 纳米级宽度的第二电极; 有源区域设置在第一和第二电极之间，有源区域具有非导电部分，其包括电子半导体或名义绝缘以及能够承载一种掺杂剂并在电场下传输掺杂剂的弱离子导体开关材料，以及 用作掺杂剂的源或汇的源部分; 以及形成在第一电极之间，第一电极和有源区之间或形成在第二电极上的第二电极和有源区之间的氧化物层。 还提供了包括多个纳米级切换装置的交叉开关阵列。 还提供了制造至少一个纳米级切换装置的方法。

    Nanoscale switching device
    4.
    发明授权
    Nanoscale switching device 有权
    纳米级开关器件

    公开(公告)号：US08912520B2

    公开(公告)日：2014-12-16

    申请号：US13809498

    申请日：2010-07-21

    申请人： Jianhua Yang ,  Matthew Pickett ,  Gilberto Ribeiro

    发明人： Jianhua Yang ,  Matthew Pickett ,  Gilberto Ribeiro

    IPC分类号： H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/146

    摘要： A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.

    摘要翻译： 纳米级开关器件具有设置在纳米级宽度的两个电极之间的有源区域。 有源区域包含交换材料，其携带能够在电场下在有源区域上传输的移动离子掺杂剂，以改变器件的电阻状态。 开关材料还携带用于抑制由器件的开关周期引起的移动离子掺杂剂聚集的固定的离子掺杂剂。 不可移动的离子掺杂剂具有与移动离子掺杂剂的电荷极性相反的电荷，并且在电场下的移动性低于移动离子掺杂剂。

    NANOSCALE SWITCHING DEVICE
    6.
    发明申请
    NANOSCALE SWITCHING DEVICE 有权
    纳米开关器件

    公开(公告)号：US20130168629A1

    公开(公告)日：2013-07-04

    申请号：US13821173

    申请日：2010-09-16

    申请人： Gilberto Ribeiro ,  Janice H. Nickel ,  Jianhua Yang

    发明人： Gilberto Ribeiro ,  Janice H. Nickel ,  Jianhua Yang

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1233 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1641

    摘要： A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed.

    摘要翻译： 纳米级切换装置包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 设置在所述第一和第二电极之间的有源区，所述有源区包含开关材料; 所述有源区域内的区域将所述第一电极和所述第二电极之间的电流约束到所述有源区域的中心部分; 以及由电介质材料形成并且设置在有源区域外的第一和第二电极之间的层间电介质层。 还公开了一种形成纳米尺度开关器件的纳米尺度交叉列阵列和方法。

    Nanoscale switching device
    7.
    发明授权
    Nanoscale switching device 有权
    纳米级开关器件

    公开(公告)号：US09040948B2

    公开(公告)日：2015-05-26

    申请号：US13821173

    申请日：2010-09-16

    申请人： Gilberto Ribeiro ,  Janice H Nickel ,  Jianhua Yang

    发明人： Gilberto Ribeiro ,  Janice H Nickel ,  Jianhua Yang

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/1233 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1641

    摘要： A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed.

    摘要翻译： 纳米级切换装置包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 设置在所述第一和第二电极之间的有源区，所述有源区包含开关材料; 所述有源区域内的区域将所述第一电极和所述第二电极之间的电流约束到所述有源区域的中心部分; 以及由电介质材料形成并且设置在有源区域外的第一和第二电极之间的层间电介质层。 还公开了一种形成纳米尺度开关器件的纳米尺度交叉列阵列和方法。

    MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES
    9.
    发明申请
    MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES 有权
    具有包含多个相位的复合材料的开关层的电容器

    公开(公告)号：US20110309321A1

    公开(公告)日：2011-12-22

    申请号：US12819763

    申请日：2010-06-21

    申请人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    发明人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    IPC分类号： H01L27/24 ,  H01L21/26 ,  H01L45/00

    CPC分类号： H01L27/24 ,  G11C13/0007 ,  G11C2213/52 ,  H01L45/04 ,  H01L45/145

    摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.

    摘要翻译： 公开了具有包括多相复合的开关层的忆阻器。 忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相， 在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。 还公开了制造忆阻器和使用忆阻器的横杆的方法。