公开(公告)号：US5185282A

公开(公告)日：1993-02-09

申请号：US602807

申请日：1990-10-24

申请人： Jin H. Lee ,  Cheon S. Kim ,  Kyu H. Lee ,  Dae Y. Kim

发明人： Jin H. Lee ,  Cheon S. Kim ,  Kyu H. Lee ,  Dae Y. Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L28/60 ,  H01L28/91

摘要： A DRAM cell of a stack structure having a cup-shaped polysilicon storage electrode for being applied to a 16 mega and 64 mega DRAM wherein a transfer transistor is firstly manufactured, a bit line is formed, an oxide film grid is formed between the cell and cell in the minimum design rule, and upon completing this, the polysilicon storage electrode is formed into a single or double cup shape, whereby the capacitor area is remarkably increased when compared with the conventional stacked structure DRAM cell so that the area efficiency is greatly increased and the process can be executed by such a mask number as the prior stacked structure mask layer number and the structure thereof is simple.

摘要翻译： 具有杯形多晶硅存储电极的DRAM单元，其用于施加到16兆和64兆DRAM，其中首先制造传输晶体管，形成位线，在电池和 在最小设计规则中，多晶硅存储电极形成为单杯形或双杯状，与常规堆叠结构的DRAM电池相比，电容器面积显着增加，从而使面积效率大大提高 并且该处理可以通过与现有的层叠结构掩模层数目相同的掩码数来执行，其结构简单。

公开(公告)号：US5252845A

公开(公告)日：1993-10-12

申请号：US880300

申请日：1992-05-05

申请人： Cheon S. Kim ,  Jin H. Lee ,  Kyu H. Lee ,  Dae Y. Kim

发明人： Cheon S. Kim ,  Jin H. Lee ,  Kyu H. Lee ,  Dae Y. Kim

IPC分类号： H01L27/108 ,  H01L29/68 ,  H01L29/78 ,  H01L29/92

CPC分类号： H01L27/10841

摘要： The DRAM cell of the invention comprises a structure wherein a deep trench is formed on a silicon wafer, a stacked trench capacitor is formed around a silicon pillar associated with the trench, and a vertical transfer transistor is formed on top of the silicon pillar after the formation of the stacked trench capacitor. The transfer transistor is connected to the storage capacitor through a selectively doped n.sup.+ diffused layer, and isolation between DRAM cells is formed by the trench.

摘要翻译： 本发明的DRAM单元包括其中在硅晶片上形成深沟槽的结构，在与沟槽相关联的硅柱的周围形成堆叠的沟槽电容器，并且在硅柱的顶部形成垂直传输晶体管 形成堆叠沟槽电容器。 传输晶体管通过选择性掺杂的n +扩散层连接到存储电容器，并且由沟槽形成DRAM单元之间的隔离。

公开(公告)号：US5223447A

公开(公告)日：1993-06-29

申请号：US577109

申请日：1990-09-04

申请人： Jin H. Lee ,  Cheon S. Kim ,  Kyu H. Lee ,  Dae Y. Kim

发明人： Jin H. Lee ,  Cheon S. Kim ,  Kyu H. Lee ,  Dae Y. Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10861 ,  H01L28/40

摘要： A method for manufacturing a DRAM cell is provided having an isolation merged trench for applying to 16 megabit and 64 megabit DRAM cells, which includes the steps forming a primary dielectric for a capacitor within the interior of a trench, depositing an n.sup.+ doped polysilicon, forming a secondary dielectric and then stacking polysilicon thereon and connecting the polysilicon within an n.sup.+ diffusion layer of the bottom of the trench for forming a plate. As a result of this method all of the capacitors disposed between the n.sup.+ polysilicon storing electrode and the n.sup.+ polysilicon plate as well as the polysilicon storing electrode and the n.sup.+ diffusion layer plate are utilized as a storing capacitor.

摘要翻译： 提供了一种用于制造DRAM单元的方法，其具有用于施加到16兆位和64兆位DRAM单元的隔离合并沟槽，其包括在沟槽内形成用于电容器的初级介质的步骤，沉积n +掺杂多晶硅，形成 二次电介质，然后在其上堆叠多晶硅，并将沟槽的底部的n +扩散层内的多晶硅连接以形成板。 作为这种方法的结果，使用设置在n +多晶硅存储电极和n +多晶硅板之间的所有电容器以及多晶硅存储电极和n +扩散层板作为存储电容器。

公开(公告)号：US5236858A

公开(公告)日：1993-08-17

申请号：US796845

申请日：1991-11-25

申请人： Kyu H. Lee ,  Sang H. Chai ,  Soon I. Yeo ,  Jin S. Kim ,  Jin H. Lee

发明人： Kyu H. Lee ,  Sang H. Chai ,  Soon I. Yeo ,  Jin S. Kim ,  Jin H. Lee

IPC分类号： H01L27/10 ,  H01L21/337 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/808

CPC分类号： H01L27/10864 ,  H01L21/76235 ,  H01L27/10841

摘要： The invention relates to a method of manufacturing a DRAM in which a storage capacitor is stacked vertically over a switching junction FET. There is provided a method comprising the steps of: (a) sequentially depositing a nitride layer and a first oxide layer on a substrate; (b) etching away the oxide and nitride layer by means of a trench mask so as to define field and active regions; (c) etching away the substrate of the field region up to a predetermined depth using the remaining oxide and nitride layers as a mask so as to form trench portion; (d) forming a first spacer at the edges of the trench portion; (e) further etching away the substrate of the field region up to a predetermined depth using the remaining oxide and nitride layers and the first spacer as a mask; (f) forming a second spacer at edges of the trench portion; (g) growing a device isolating field oxide layer of the field region after etching away the substrate of the field region; (h) depositing a polysilicon layer thereon after removal of the second spacer and implanting impurity into the substrate through the polysilicon layer so as to form a gate junction region; (i) etching away the polysilicon layer only on the field region so as to define a word line; (j) growing an insulating layer in the field region and removing the first oxide layer on the nitride layer; (k) flatting projected portions of the polysilicon layer and forming an oxide layer on the projected portion and the insulating layer so as to self-contact between storage node of the storage capacitor and drain of the junction FET; (I) depositing a patterned polysilicon layer for the storage node thereon and forming a capacitor dielectric layer around the patterned polysilicon layer; and (m) depositing a polysilicon layer for a plate electrode and defining a bit line by means of a bit line mask.

摘要翻译： 本发明涉及一种制造其中存储电容器垂直堆叠在开关结FET上的DRAM的方法。 提供了一种方法，包括以下步骤：（a）在衬底上依次沉积氮化物层和第一氧化物层; （b）通过沟槽掩模蚀刻掉氧化物和氮化物层，以便限定场和有源区; （c）使用剩余的氧化物和氮化物层作为掩模将场区的衬底刻蚀至预定的深度，以形成沟槽部分; （d）在沟槽部分的边缘处形成第一间隔物; （e）使用剩余的氧化物和氮化物层和第一间隔物作为掩模，进一步蚀刻掉场区的衬底达预定深度; （f）在沟槽部分的边缘处形成第二间隔物; （g）在蚀刻掉场区的衬底之后，生长场隔离场区氧化层的器件; （h）在去除所述第二间隔物之后在其上沉积多晶硅层并通过所述多晶硅层将杂质注入所述衬底中以形成栅极结区域; （i）仅在场区域上蚀刻去除多晶硅层，以便限定字线; （j）在场区域中生长绝缘层并去除氮化物层上的第一氧化物层; （k）使所述多晶硅层的突出部分平坦化并在所述突出部分和所述绝缘层上形成氧化物层，以便在所述存储电容器的存储节点与所述结型FET的漏极之间自我接触; （I）在其上沉积用于存储节点的图案化多晶硅层并在图案化多晶硅层周围形成电容器介电层; 和（m）沉积用于平板电极的多晶硅层并借助位线掩模限定位线。

公开(公告)号：USD455532S1

公开(公告)日：2002-04-09

申请号：US29129935

申请日：2000-09-25

申请人： Kyu H. Lee

设计人： Kyu H. Lee

公开(公告)号：US06228995B1

公开(公告)日：2001-05-08

申请号：US08835777

申请日：1997-04-08

申请人： Kyu H. Lee

发明人： Kyu H. Lee

IPC分类号： A23J100

CPC分类号： A61L2/0011 ,  A61L2/0088 ,  A61M1/3686

摘要： A method for the removal of psoralens and psoralen degradation products is disclosed. The method of the present invention is useful for any biological fluid that has been treated with psoralens, including blood and blood fractions and components derived therefrom. Biological fluids treated according to the method of the present invention are substantially free from any residual psoralens or psoralen degradation products.

摘要翻译： 公开了一种去除补骨脂素和补骨脂素降解产物的方法。 本发明的方法可用于已经用补骨脂素处理的任何生物流体，包括血液和血液部分以及由其衍生的成分。 根据本发明的方法处理的生物体液基本上不含残留的补骨脂素或补骨脂素降解产物。

公开(公告)号：US5569928A

公开(公告)日：1996-10-29

申请号：US166494

申请日：1993-12-14

申请人： Kyu H. Lee ,  Livingston B. Morris ,  David W. Palmer, deceased

发明人： Kyu H. Lee ,  Livingston B. Morris ,  David W. Palmer, deceased

IPC分类号： A61M1/36 ,  B04B5/00 ,  A61N5/06

CPC分类号： A61M1/3681 ,  A61M1/3683 ,  A61M1/3693

摘要： Light arrays for use in systems for separating and irradiating blood are disclosed. In accordance with the present invention, the light array has one or more bulbs with electrical connecting leads and first and second support members connected to the bulbs. The second support member preferably includes a connector for receiving the electrical leads. The support members preferably define an end surface and an interior surface, wherein the support members are disposed adjacent the bulbs so the end surfaces are opposed to define a channel, providing a space where tubing carrying blood or other fluids can be disposed without interfering with the array. The bulbs are most preferably attached to the support members using flexible self-locking straps, and in embodiments using two or more bulbs, the bulbs are also preferably held together by one or more straps. Improved mounting systems for connecting the array to the instrument by one or more spring mounts are also disclosed. In certain preferred embodiments, one of the support members is a circuit board and includes a microcircuit for controlling the operation of the array using a clock/timer circuit for determining a total time of activation for the array, whereby upon reaching a predetermined value of the total time of activation, the clock/timer circuit disables the light array. Thus, methods of controlling the output of an array of bulbs are also disclosed.

摘要翻译： 公开了用于分离和照射血液的系统中的光阵列。 根据本发明，光阵列具有一个或多个具有电连接引线的灯泡和连接到灯泡的第一和第二支撑构件。 第二支撑构件优选地包括用于接收电引线的连接器。 支撑构件优选地限定端表面和内表面，其中支撑构件邻近灯泡设置，使得端表面相对以限定通道，从而提供容纳血液或其它流体的管道可以在不干扰 数组。 灯泡最优选地使用柔性自锁带附接到支撑构件，并且在使用两个或更多个灯泡的实施例中，灯泡也优选地通过一个或多个带固定在一起。 还公开了用于通过一个或多个弹簧座将阵列连接到仪器的改进的安装系统。 在某些优选实施例中，支撑构件之一是电路板，并且包括用于使用用于确定阵列的激活的总时间的时钟/定时器电路来控制阵列的操作的微电路，由此在达到预定值 总共激活时间，时钟/定时器电路禁用光阵列。 因此，还公开了控制灯泡阵列的输出的方法。

公开(公告)号：US5890258A

公开(公告)日：1999-04-06

申请号：US832243

申请日：1997-04-03

申请人： Kyu H. Lee

发明人： Kyu H. Lee

IPC分类号： A47L11/30 ,  A47L11/34 ,  A47L11/40

CPC分类号： A47L11/4061 ,  A47L11/30 ,  A47L11/34 ,  A47L11/40 ,  A47L11/4016 ,  A47L11/4083

摘要： A carpet cleaner device and method having feed and dispensing lines for applying and removing cleaning solutions from carpets, upholstery, floors and similar surfaces is disclosed. Connections to these lines, and also connections for electric power are mounted on a tray which is supported within the device during use. The tray may be pulled out from the device to expose the lines and connections for ready access during servicing, and/or repair.

摘要翻译： 公开了一种地毯清洁装置和方法，其具有用于从地毯，室内装饰物，地板和类似表面施加和去除清洁溶液的进料和分配管线。 与这些线路的连接以及用于电力的连接被安装在在使用期间被支撑在设备内的托盘上。 托盘可以从设备中拉出，以便在维修和/或维修期间露出线路和连接以便随时进入。

公开(公告)号：US4921473A

公开(公告)日：1990-05-01

申请号：US305339

申请日：1989-02-02

申请人： Kyu H. Lee ,  Livingston B. Morris

发明人： Kyu H. Lee ,  Livingston B. Morris

IPC分类号： A61M1/02 ,  A61M1/36 ,  B04B5/04

CPC分类号： A61M1/3681 ,  A61M1/3683 ,  A61M1/3693 ,  A61M1/3696 ,  B04B5/0442 ,  B04B2005/0464

摘要： A multicomponent fluid separation and irradiation system is described containing a centrifuge drum and a source of radiant energy located within the drum. In a first embodiment a disposable rigid separation/irradiation chamber is provided with a cylindrical outer compartment located within the drum and opposing the radiant energy source. Whole blood is supplied to the chamber through a dynamic seal located at the center of the chamber. As the chamber is rotated, blood is separated so that energy from the source passes through the inner wall of the chamber and the separated plasma layer to irradiate the buffy coat layer. In a second embodiment, one or both of the walls of the outer compartment of the chamber are flexible so that the chamber will expand as blood is pumped in and will collapse as blood is pumped out.

公开(公告)号：USD586964S1

公开(公告)日：2009-02-17

申请号：US29292260

申请日：2007-10-04

申请人： Kyu H. Lee

设计人： Kyu H. Lee