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公开(公告)号：US20070001989A1
公开(公告)日：2007-01-04
申请号：US11477346
申请日：2006-06-30
IPC: G09G3/36
CPC classification number: G09G3/3688 , G11C19/00 , G11C27/024
Abstract: An analog sampling apparatus for a liquid crystal display device includes: a data driver to generate an analog data voltage; a data output bus line to receive the analog data voltage; a first sampling and holding circuit connected to the data output bus line to compensate an offset voltage in the analog data voltage and to supply the analog data voltage to a data line of a liquid crystal display panel; and a second sampling and holding circuit connected to the data output bus line arranged to sample the analog data voltage while the analog data voltage is supplied to the data line by the first sampling and holding circuit. The first sampling and holding circuit is arranged to supply the analog data voltage while the second sampling and holding circuit samples the analog data voltage, and to sample the analog data voltage while the second sampling and holding circuit supplies the analog data voltage.
Abstract translation: 一种用于液晶显示装置的模拟采样装置，包括：数据驱动器，用于产生模拟数据电压; 数据输出总线接收模拟数据电压; 连接到数据输出总线的第一采样和保持电路，以补偿模拟数据电压中的偏移电压，并将模拟数据电压提供给液晶显示面板的数据线; 以及第二采样保持电路，连接到数据输出总线，布置成通过第一采样保持电路将模拟数据电压提供给数据线，对模拟数据电压进行采样。 第一采样和保持电路被布置成在第二采样和保持电路对模拟数据电压进行采样时提供模拟数据电压，并且在第二采样保持电路提供模拟数据电压的同时采样模拟数据电压。
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Patent Agency Ranking
公开(公告)号：US20060284182A1
公开(公告)日：2006-12-21
申请号：US11455707
申请日：2006-06-20
IPC: H01L29/04
CPC classification number: H01L29/04 , H01L27/1285 , H01L27/1296 , H01L29/78672
Abstract: A liquid crystal display device includes first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries, wherein the first thin film transistor has a first channel direction different from a first grain boundary direction of the first grain boundaries, and a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries, wherein the second thin film transistor has a second channel direction parallel to a second grain boundary direction of the second grain boundaries, wherein the first and second transistors have a substantially same electrical characteristic.
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公开(公告)号：US20060022891A1
公开(公告)日：2006-02-02
申请号：US10998301
申请日：2004-11-26
Applicant: Gregory O'Neill , Murray Fugate , Young-Min Jo , John Farrar , Myung Lee , Se-hyun Oh , Joo Lee , Jin Yoon , Sang Choi , Eun Han
Inventor： Gregory O'Neill , Murray Fugate , Young-Min Jo , John Farrar , Myung Lee , Se-hyun Oh , Joo Lee , Jin Yoon , Sang Choi , Eun Han
IPC: H01Q1/36
CPC classification number: H01Q11/08
Abstract: A quadrifilar helical antenna comprising two pairs of filars having unequal lengths and phase quadrature signals propagating thereon. A conductive H-shaped impedance matching element matches a source impedance to an antenna impedance. The impedance matching element having a feed terminal at the center thereof from which current is supplied to the two filars of each filar pair disposed about an edge of the impedance matching element and symmetric with respect to a center of the impedance matching element. The impedance matching element further comprises a reactive element for matching the antenna and source impedances.
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4.发明申请Phase shifter using tunable bragg gratings and method for providing a tunable phase shift function thereof 有权使用可调谐布拉格光栅的移相器和用于提供可调谐相移功能的方法公开(公告)号：US20050179507A1
公开(公告)日：2005-08-18
申请号：US11059318
申请日：2005-02-17
Applicant: Jin Yoon
Inventor： Jin Yoon
CPC classification number: H01P1/185
Abstract: A phase shifter which uses bragg gratings and having tunable phase shift functions with respect to input signals in an RF band without using a separate RF device. The phase shifter includes a dielectric layer, a first conductive layer formed on an upper surface of the dielectric layer lengthwise along the dielectric layer so as to provide a signal path for the input signal, a second conductive layer formed at a first end of a lower surface of the dielectric layer so as to form bragg gratings lengthwise along the dielectric layer, a third conductive layer formed at a second end of the lower surface of the dielectric layer in line with the second conductive layer so as to form bragg gratings lengthwise along the dielectric layer, and a moving unit for adjusting a distance between the second conductive layer and the third conductive layer within a predetermined length. The phase of the signal of the RF band is shifted by adjusting the distance between the second and third conductive layers without using a separate RF device, thereby significantly reducing the manufacturing cost for the phase shifter.
Abstract translation: 一种移相器，其使用布拉格光栅并且相对于RF频带中的输入信号具有可调谐相移功能，而不使用单独的RF器件。 移相器包括电介质层，第一导电层，沿着电介质层纵向形成在电介质层的上表面上，以便为输入信号提供信号路径;第二导电层形成在下部的第一端 电介质层的表面，以沿着电介质层纵向形成布拉格光栅;第三导电层，形成在电介质层的下表面的第二端，与第二导电层一致，以便沿着第二导电层纵向形成布拉格光栅 电介质层和用于在预定长度内调节第二导电层和第三导电层之间的距离的移动单元。 RF带的信号的相位通过调整第二和第三导电层之间的距离而不使用单独的RF器件来移动，从而显着降低了移相器的制造成本。
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公开(公告)号：US06568748B2
公开(公告)日：2003-05-27
申请号：US10028287
申请日：2001-12-28
Applicant: Jin Yoon
Inventor： Jin Yoon
IPC: B60R9058
Abstract: The present invention relates to an apparatus for fixing a roof rack to a vehicle roof. Particularly, the present invention relates to an apparatus for facilitating mounting and dismounting of a roof rack for loading various kinds of freight thereon by structurally improving a vehicle roof to employ a unified single roof molding. According to the present invention, there is provided an apparatus for fixing a roof rack to a vehicle roof of the type comprising a roof panel 100 in which roof molding engagement portions 110 are longitudinally formed to be depressed along both sides of the vehicle roof, and roof moldings 200 inserted into and engaged with the roof molding engagement portions 110 of the roof panel 100. Further, the apparatus of the present invention comprises engagement openings 210 formed to pass through the roof moldings, and movable covers 300 placed in the interiors of the roof moldings to allow the engagement openings 210 to be resiliently opened and closed. Therefore, since the unified single roof molding can be employed by structurally improving the vehicle roof, irrespective of whether or not the roof rack is used, the number of parts and the cost of production can be reduced and production processes can be simplified. Further, since the roof rack can be easily mounted to and dismounted from the roof modling, a user's convenience increases. Furthermore, since the interior of the roof molding cannot be seen when the roof rack has been dismounted from the roof molding, the aesthetic appearance of the vehicle roof can be enhanced.
Abstract translation: 本发明涉及一种用于将屋顶架固定到车顶的装置。 特别地，本发明涉及一种用于通过结构改进车顶以采用统一的单一屋顶成型，便于安装和拆卸用于装载各种货物的车顶架的装置。 根据本发明，提供了一种用于将车顶架固定到包括顶板100的车顶的装置，其中屋顶成型接合部分110纵向地形成为沿着车顶的两侧被压下， 屋顶模制件200插入并与顶板100的屋顶成型接合部分110接合。此外，本发明的装置包括形成为穿过屋顶成型品的接合开口210和放置在屋顶成型接合部分110的内部的活动盖300。 屋顶模制品允许接合开口210弹性地打开和关闭。 因此，由于可以通过结构地改善车顶来采用统一的单层屋顶成型，所以不管屋顶架是否使用，可以减少零件数量和生产成本，并且可以简化生产过程。 此外，由于车顶行李架可以容易地安装到车顶装卸中，使用者的便利性增加。 此外，由于当车顶架已经从车顶成型件上拆下时，不能看到车顶成型件的内部，所以可以提高车顶的美观。
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公开(公告)号：US20060251912A1
公开(公告)日：2006-11-09
申请号：US11482840
申请日：2006-07-10
CPC classification number: C23C8/02 , C23C10/02 , C23C12/00 , Y10T428/31678
Abstract: A MoSi2—Si3N4 composite coating which is coated on a surface of base materials which are molybden, molybden alloy, molybden-coated niobium or molybden-coated niobium alloy and a manufacturing method thereof. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a Mo2N—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the Mo5Si3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N—Si3N4 composite diffusion layer. The MoSi2—Si3N4 composite coating manufactured by the above method is characterized as a structure in which Si3N4 particles are distributed in a MoSi2 grain boundary of equiaxed grains, thus to improve cyclic oxidation resistance of the base material, improve low-temperature oxidation resistance, and improve mechanical properties of the coating. Therefore, transmission of fine cracks by the thermal stress can be restrained.
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