摘要:
A driving circuit of a liquid crystal display includes: a timing controller to output a gate control signal and a data control signal to control driving of a gate driving unit and a data driving unit and to output digital video data; a pair of gate driving units to be alternately driven by using at least one frame as a period to supply gate signals to gate lines of a liquid crystal panel in response to the gate control signal; and a data driving unit to supply pixel signals to data lines of the liquid crystal panel in response to the data control signal. Degradation of characteristics of transistors constituting each gate driver can be prevented.
摘要:
A driving circuit of a liquid crystal display includes: a timing controller to output a gate control signal and a data control signal to control driving of a gate driving unit and a data driving unit and to output digital video data; a pair of gate driving units to be alternately driven by using at least one frame as a period to supply gate signals to gate lines of a liquid crystal panel in response to the gate control signal; and a data driving unit to supply pixel signals to data lines of the liquid crystal panel in response to the data control signal. Degradation of characteristics of transistors constituting each gate driver can be prevented.
摘要:
A driving circuit of a liquid crystal display includes: a timing controller to output a gate control signal and a data control signal to control driving of a gate driving unit and a data driving unit and to output digital video data; a pair of gate driving units to be alternately driven by using at least one frame as a period to supply gate signals to gate lines of a liquid crystal panel in-response to the gate control signal; and a data driving unit to supply pixel signals to data lines of the liquid crystal panel in response to the data control signal. Degradation of characteristics of transistors constituting each gate driver can be prevented.
摘要:
A gate driving unit for a liquid crystal display device including a plurality of liquid crystal pixels, first to Nth gate lines, a plurality of liquid crystal capacitors and a plurality of thin film transistors, includes first and second clock signal lines for providing first and second clock signals; first to Nth shift registers respectively corresponding to the first to Nth gate lines, the first to Nth shift registers receiving one of the first clock signal and the second clock signal and outputting first to Nth scanning signals, respectively; a redundant repair shift register as (N+1)th shift register receiving one of first and second clock signals and outputting a repair scanning signal; a plurality of first switches for respectively connecting one of the first and second clock signal lines to the first to Nth shift registers and the redundant repair shift register; a plurality of second switches for respectively switching a connection of the first to Nth shift registers with the first to Nth gate lines; and a plurality of third switches for respectively switching a connection of the second to Nth shift registers and the redundant repair shift register with the first to Nth gate lines, wherein N is positive integer.
摘要:
In a method of forming an insulation layer pattern, an insulation layer is formed on a substrate. An organic layer and a hard mask layer are successively formed on the insulation layer. A preliminary hard mask pattern having first openings is formed by patterning the hard mask layer. A hard mask pattern having the first openings and second openings is formed by patterning the preliminary hard mask pattern. Width control spacers are formed on sidewalls of the first and the second openings. An etching mask pattern is formed by etching the organic layer using the hard mask pattern as an etching mask. The insulation layer pattern having third openings is formed by etching the insulation layer using the etching mask pattern as an etching mask.
摘要:
Devices and methods of fabricating a conductive pattern of such devices comprise a non-single crystalline semiconductor pattern formed on a single crystalline semiconductor substrate, an insulating spacer formed on a sidewall of the non-single crystalline semiconductor pattern, the non-single crystalline semiconductor pattern selectively recessed using a cyclic selective epitaxial growth (SEG) process, and a silicide layer formed on the recessed non-single crystalline semiconductor pattern.
摘要:
In a method of forming an insulation layer pattern, an insulation layer is formed on a substrate. An organic layer and a hard mask layer are successively formed on the insulation layer. A preliminary hard mask pattern having first openings is formed by patterning the hard mask layer. A hard mask pattern having the first openings and second openings is formed by patterning the preliminary hard mask pattern. Width control spacers are formed on sidewalls of the first and the second openings. An etching mask pattern is formed by etching the organic layer using the hard mask pattern as an etching mask. The insulation layer pattern having third openings is formed by etching the insulation layer using the etching mask pattern as an etching mask.
摘要:
Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling insulation pattern in a trench. The capping insulation pattern may have an etch selectivity according to the filling insulation pattern. As a result, the likelihood that the filling insulation layer may be etched by various cleaning processes and the process removing the buffer insulation pattern may be reduced or prevented.
摘要:
Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling insulation pattern in a trench. The capping insulation pattern may have an etch selectivity according to the filling insulation pattern. As a result, the likelihood that the filling insulation layer may be etched by various cleaning processes and the process removing the buffer insulation pattern may be reduced or prevented.
摘要:
There are provided an organic light emitting diode (OLED) display driving apparatus and a driving method thereof, in which the OLED display panel driving apparatus of a passive matrix type is configured such that its scan driving circuit has 3-state output, and the cathode lines, selected when the scan driving circuit performs a scan operation, maintain grounding, and after data-applied OLED emits light, are switched in a high voltage, and execute a refresh operation to initialize the pixel charges, and with the high impedance state maintained, non-selective common cathode lines turn into a high impedance state so as to remove the parasitic capacitance elements, and reduce the capacitance element functioning as the load of the data driving circuit connected to the OLED anode lines, and without the use of precharge method of maintaining the anode lines above a predetermined voltage quickly by using a voltage source, and applying data by using a current source, the anode lines can be charged within a short time just by necessary current for the lightening of the OLED so as to reduce the power consumption of the data driving circuit, and increase the operation speed.