公开(公告)号：US20100062559A1

公开(公告)日：2010-03-11

申请号：US12585349

申请日：2009-09-11

申请人： Jin-Hyeong Park ,  Taek-Soo Kim ,  Chan Park ,  Jong-Cheol Shin ,  Young-Hyun Lee

发明人： Jin-Hyeong Park ,  Taek-Soo Kim ,  Chan Park ,  Jong-Cheol Shin ,  Young-Hyun Lee

IPC分类号： H01L31/18

CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14698

摘要： An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon.

摘要翻译： 可以在具有第一区域和第二区域的基板上形成外延层。 可以在衬底的第一区域中的外延层的第一部分上形成光电二极管。 可以在与光电二极管相邻的外延层上形成至少一个传输晶体管。 多个晶体管可以形成在第二区域中的外延层的第二部分上。 可以形成绝缘层以覆盖光电二极管，至少一个传输晶体管和多个晶体管。 可以通过绝缘层形成多个连接，以与第二区域中的至少一个传输晶体管和多个晶体管电连接。 可以形成屏蔽构件以暴露光电二极管。 在形成屏蔽构件之前，可以用氢等离子体处理外延层和/或衬底以除去硅 - 氧和/或硅 - 硅的悬挂键。

公开(公告)号：US20080191250A1

公开(公告)日：2008-08-14

申请号：US11962401

申请日：2007-12-21

申请人： Kang-Bok Lee ,  Jong-Cheol Shin

发明人： Kang-Bok Lee ,  Jong-Cheol Shin

IPC分类号： H01L27/146 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L29/78

摘要： A transistor having an electrode layer that can reduce or prevent a coupling effect, a fabricating method thereof, and an image sensor having the same are provided. The transistor includes a semiconductor substrate and a well of a first conductivity type formed on the semiconductor substrate. A heavily-doped first impurity region of a first conductivity type surrounds an active region defined in the well. Heavily-doped second and third impurity regions of a second conductivity type are spaced apart from each other in the active region an define a channel region interposed therebetween. A gate is formed over the channel region to cross the active region. The gate overlaps at least a portion of the first impurity region and receives a first voltage. An electrode layer is formed between the semiconductor substrate and the gate, such that the electrode layer overlaps a portion of the first impurity region contacting the channel region and receives a second voltage. An insulation layer is formed between the semiconductor substrate and the electrode layer, the semiconductor substrate and the gate, and the electrode layer and the gate. The insulation layer surrounds the electrode layer.

摘要翻译： 提供具有可以减少或防止耦合效应的电极层的晶体管，其制造方法和具有该电极层的图像传感器。 晶体管包括形成在半导体衬底上的半导体衬底和第一导电类型的阱。 第一导电类型的重掺杂的第一杂质区围绕阱中限定的有源区。 第二导电类型的重掺杂的第二和第三杂质区域在有源区域中彼此间隔开，限定插入其间的沟道区域。 栅极形成在沟道区域上以穿过有源区。 栅极与第一杂质区域的至少一部分重叠并接收第一电压。 在半导体衬底和栅极之间形成电极层，使得电极层与接触沟道区的第一杂质区的一部分重叠并接收第二电压。 在半导体衬底和电极层，半导体衬底和栅极以及电极层和栅极之间形成绝缘层。 绝缘层包围电极层。

公开(公告)号：US07671419B2

公开(公告)日：2010-03-02

申请号：US11962401

申请日：2007-12-21

申请人： Kang-Bok Lee ,  Jong-Cheol Shin

发明人： Kang-Bok Lee ,  Jong-Cheol Shin

IPC分类号： H01L29/78

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L29/78

摘要： A transistor having an electrode layer that can reduce or prevent a coupling effect, a fabricating method thereof, and an image sensor having the same are provided. The transistor includes a semiconductor substrate and a well of a first conductivity type formed on the semiconductor substrate. A heavily-doped first impurity region of a first conductivity type surrounds an active region defined in the well. Heavily-doped second and third impurity regions of a second conductivity type are spaced apart from each other in the active region an define a channel region interposed therebetween. A gate is formed over the channel region to cross the active region. The gate overlaps at least a portion of the first impurity region and receives a first voltage. An electrode layer is formed between the semiconductor substrate and the gate, such that the electrode layer overlaps a portion of the first impurity region contacting the channel region and receives a second voltage. An insulation layer is formed between the semiconductor substrate and the electrode layer, the semiconductor substrate and the gate, and the electrode layer and the gate. The insulation layer surrounds the electrode layer.

摘要翻译： 提供具有可以减少或防止耦合效应的电极层的晶体管，其制造方法和具有该电极层的图像传感器。 晶体管包括形成在半导体衬底上的半导体衬底和第一导电类型的阱。 第一导电类型的重掺杂的第一杂质区围绕阱中限定的有源区。 第二导电类型的重掺杂的第二和第三杂质区域在有源区域中彼此间隔开，限定插入其间的沟道区域。 栅极形成在沟道区域上以穿过有源区。 栅极与第一杂质区域的至少一部分重叠并接收第一电压。 在半导体衬底和栅极之间形成电极层，使得电极层与接触沟道区的第一杂质区的一部分重叠并接收第二电压。 在半导体衬底和电极层，半导体衬底和栅极以及电极层和栅极之间形成绝缘层。 绝缘层包围电极层。

公开(公告)号：US08748945B2

公开(公告)日：2014-06-10

申请号：US13367599

申请日：2012-02-07

申请人： Jong-Cheol Shin

发明人： Jong-Cheol Shin

IPC分类号： H01L29/768

CPC分类号： H01L27/14643 ,  H01L27/14607 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

摘要： Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.

摘要翻译： 提供图像传感器。 图像传感器可以包括具有不同导电类型的第一和第二堆叠杂质区。 图像传感器还可以包括第一杂质区域中的浮动扩散区域。 图像传感器还可以包括围绕第一杂质区域中的浮动扩散区域的传输栅极电极。 此外，传输栅极电极和浮动扩散区域可以与第二杂质区域重叠。

公开(公告)号：US20120252155A1

公开(公告)日：2012-10-04

申请号：US13428792

申请日：2012-03-23

申请人： Sang-Jun CHOI ,  June-Mo Koo ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Yu-Jin Ahn ,  Eun-Kyung Park ,  Sun-E Park

发明人： Sang-Jun CHOI ,  June-Mo Koo ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Yu-Jin Ahn ,  Eun-Kyung Park ,  Sun-E Park

IPC分类号： H01L31/18 ,  H01L21/04

CPC分类号： H01L21/2652 ,  H01L21/2658 ,  H01L21/268 ,  H01L27/14632 ,  H01L27/14683 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed.

摘要翻译： 在掺杂杂质的方法中，在基板上形成非晶层。 通过非晶层的顶表面注入杂质以在衬底的上部形成第一掺杂区。 第一掺杂区和非晶层分别通过激光退火工艺转变成第二掺杂区和再结晶层。 去除重结晶层。

公开(公告)号：US20120199882A1

公开(公告)日：2012-08-09

申请号：US13367599

申请日：2012-02-07

申请人： Jong-Cheol Shin

发明人： Jong-Cheol Shin

IPC分类号： H01L31/112

CPC分类号： H01L27/14643 ,  H01L27/14607 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

摘要： Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.

摘要翻译： 提供图像传感器。 图像传感器可以包括具有不同导电类型的第一和第二堆叠杂质区。 图像传感器还可以包括第一杂质区域中的浮动扩散区域。 图像传感器还可以包括围绕第一杂质区域中的浮动扩散区域的传输栅极电极。 此外，传输栅极电极和浮动扩散区域可以与第二杂质区域重叠。

公开(公告)号：US20120077301A1

公开(公告)日：2012-03-29

申请号：US13239457

申请日：2011-09-22

申请人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

发明人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

IPC分类号： H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.

摘要翻译： 提供了一种用于制造图像传感器的图像传感器和方法。 制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

公开(公告)号：US20080224190A1

公开(公告)日：2008-09-18

申请号：US12046965

申请日：2008-03-12

申请人： Jong-Min Lee ,  Jong-Cheol Shin ,  Doo-Cheol Park ,  Jeong-Hoon Koo ,  Hee-Yong Lim

发明人： Jong-Min Lee ,  Jong-Cheol Shin ,  Doo-Cheol Park ,  Jeong-Hoon Koo ,  Hee-Yong Lim

IPC分类号： H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14689

摘要： An image sensor with sufficient photoelectric conversion capacity and enhanced reliability and a method of fabricating the same, in which the image sensor includes a bare substrate; an epitaxial layer disposed on the bare substrate and including a first impurity distribution region of a first conductivity type, which is formed on the bare substrate, and a second impurity distribution region of a second conductivity type, which is formed on the first impurity distribution region; and a charge collection well formed within the epitaxial layer and at least partially doped with third impurities of the second conductivity type, wherein the charge collection well occupies the first impurity distribution region and the second impurity distribution region and represents the second conductivity type as a whole.

摘要翻译： 具有足够的光电转换能力和增强的可靠性的图像传感器及其制造方法，其中图像传感器包括裸衬底; 外延层，设置在所述裸基板上，并且包括形成在所述裸基板上的第一导电类型的第一杂质分布区域和形成在所述第一杂质分布区域上的第二导电类型的第二杂质分布区域 ; 以及在所述外延层内形成并且至少部分地掺杂有所述第二导电类型的第三杂质的电荷收集阱，其中所述电荷收集阱占据所述第一杂质分布区域和所述第二杂质分布区域，并且表示作为整体的第二导电类型 。

公开(公告)号：US08614113B2

公开(公告)日：2013-12-24

申请号：US13239457

申请日：2011-09-22

申请人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

发明人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.

摘要翻译： 提供了一种用于制造图像传感器的图像传感器和方法。 制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

公开(公告)号：US07683451B2

公开(公告)日：2010-03-23

申请号：US11974981

申请日：2007-10-17

申请人： Jong-Cheol Shin

发明人： Jong-Cheol Shin

IPC分类号： H01L21/0232

CPC分类号： H01L27/14623

摘要： An image sensor includes a semiconductor substrate including an active pixel region and an optical black region, a wiring pattern on the active pixel region and on the optical black region, and a light shielding pattern on the wiring pattern in the optical black region, the light shielding pattern including an opening therein. A dummy pattern is in the optical black region and is spaced apart from the light shielding pattern. The dummy pattern blocks light incident through the openings of the light shielding patter. An inter-metal dielectric layer fills spaces between the patterns, and a passivation layer is on the inter-metal dielectric layer. The dummy pattern includes an opening therein, and a hydrogen diffusion path is provided from the passivation layer, through the opening in the light shielding pattern and the opening in the dummy pattern, to the semiconductor substrate. The dummy pattern may be on the same level as the wiring pattern.

摘要翻译： 图像传感器包括：半导体衬底，包括有源像素区域和光学黑色区域，有源像素区域和光学黑色区域上的布线图案，以及光学黑色区域中的布线图案上的遮光图案， 屏蔽图案包括其中的开口。 虚拟图案在光学黑色区域中并且与遮光图案间隔开。 虚拟图案阻挡通过遮光图案的开口入射的光。 金属间介电层填充图案之间的空间，钝化层位于金属间介电层上。 虚拟图案包括开口，并且从钝化层通过遮光图案中的开口和虚设图案中的开口向半导体衬底提供氢扩散路径。 虚设图案可以与布线图案处于同一水平。