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16 条记录 (耗时 0.028 秒)

    Method of and an apparatus for regulating the temperature of an electrostatic chuck
    1.
    发明授权
    Method of and an apparatus for regulating the temperature of an electrostatic chuck 有权
    用于调节静电卡盘的温度的方法和装置

    公开(公告)号：US06684652B2

    公开(公告)日：2004-02-03

    申请号：US10134729

    申请日：2002-04-30

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Sang-Jun Chun ,  Young-Min Min

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Sang-Jun Chun ,  Young-Min Min

    IPC分类号： F25D1702

    CPC分类号： H01L21/67248 ,  F25D17/02 ,  H01L21/6831

    摘要： A refrigeration system regulates the temperature of an electrostatic wafer chuck disposed in a process chamber. The refrigeration system includes a heat exchanger disposed in a heat exchange relationship with the electrostatic chuck, a refrigerator, a temperature sensor, and a temperature controller for controlling the refrigerator to cool the coolant withdrawn from the heat exchanger to a desired temperature in response to the temperature detected by the temperature sensor. The heat exchanger forms a coolant passageway inside the electrostatic chuck, and the refrigerator is disposed outside the process chamber. The temperature sensor is disposed within the body of the electrostatic chuck. The temperature of the electrostatic chuck can be regulated so as to be maintained nearly constant because the temperature used to control the cooling of the coolant is measured directly from the body of the electrostatic chuck.

    摘要翻译： 制冷系统调节设置在处理室中的静电晶片卡盘的温度。 制冷系统包括与静电卡盘热交换设置的热交换器，冰箱，温度传感器和温度控制器，用于控制冰箱以将从热交换器排出的冷却剂冷却至期望的温度 温度由温度传感器检测。 热交换器在静电卡盘内形成冷却剂通道，并且冰箱设置在处理室的外部。 温度传感器设置在静电卡盘的主体内。 由于用于控制冷却剂的冷却的温度直接从静电卡盘的主体测量，静电卡盘的温度可以被调节以保持几乎恒定。

    METHODS AND APPARATUS FOR SEMICONDUCTOR ETCHING INCLUDING AN ELECTRO STATIC CHUCK
    3.
    发明申请
    METHODS AND APPARATUS FOR SEMICONDUCTOR ETCHING INCLUDING AN ELECTRO STATIC CHUCK 审中-公开
    用于半导体蚀刻的方法和装置，包括电子静态卡盘

    公开(公告)号：US20080194113A1

    公开(公告)日：2008-08-14

    申请号：US12106484

    申请日：2008-04-21

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/6831 ,  H01J37/32642 ,  H01L21/68735

    摘要： There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

    摘要翻译： 提供了一种半导体蚀刻装置，其在蚀刻过程中除去静电卡盘（ESC）的上表面上残留的颗粒，从而防止夹紧力降低并使氦泄漏最小化。 为了防止由于晶片夹紧故障引起的蚀刻工艺的故障，通过在晶片脱扣或转印时防止聚合物落下于ESC的上部，半导体蚀刻装置包括：选择性地保持晶片的ESC 进入并定位在室内，并且包括施加RF功率的下电极部分; 位于ESC的阶梯部分并分别围绕ESC的一侧的部件; 以及阻塞在ESC和部件之间形成的真空路径中的气流的气流阻塞部。

    Semiconductor etching apparatus
    5.
    发明申请
    Semiconductor etching apparatus 有权
    半导体蚀刻装置

    公开(公告)号：US20080066867A1

    公开(公告)日：2008-03-20

    申请号：US11709400

    申请日：2007-02-22

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    IPC分类号： C23F1/00

    CPC分类号： H01L21/68735 ,  H01L21/6831

    摘要： There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

    摘要翻译： 提供了一种半导体蚀刻装置，其在蚀刻过程中除去静电卡盘（ESC）的上表面上残留的颗粒，从而防止夹紧力降低并使氦泄漏最小化。 为了防止由于晶片夹紧故障引起的蚀刻工艺的故障，通过在晶片脱扣或转印时防止聚合物落下于ESC的上部，半导体蚀刻装置包括：选择性地保持晶片的ESC 进入并定位在室内，并且包括施加RF功率的下电极部分; 位于ESC的阶梯部分并分别围绕ESC的一侧的部件; 以及阻塞在ESC和部件之间形成的真空路径中的气流的气流阻塞部。

    Method for generating gas plasma
    7.
    发明授权
    Method for generating gas plasma 有权
    产生气体等离子体的方法

    公开(公告)号：US07193369B2

    公开(公告)日：2007-03-20

    申请号：US10368344

    申请日：2003-02-20

    申请人： Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

    发明人： Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

    IPC分类号： H01J7/24

    CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32357 ,  Y02C20/30 ,  Y02P70/605

    摘要： A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

    摘要翻译： 一种用于产生等离子体的方法。 气体沿着与主磁场的磁力线相同位移的流路流动，向气体施加高频交流电流，从而产生气体等离子体。 例如，气体沿第一方向流过管道。 电力沿着第一方向大致沿管道传导。 并且沿着在管中流动的气体沿着第二方向（例如，垂直于第一方向）施加磁场，使得在管中感应出等离子体。

    Input/output valve switching apparatus of semiconductor manufacturing system
    8.
    发明授权
    Input/output valve switching apparatus of semiconductor manufacturing system 失效
    半导体制造系统的输入/输出阀开关装置

    公开(公告)号：US06824617B2

    公开(公告)日：2004-11-30

    申请号：US10131239

    申请日：2002-04-25

    申请人： Yun-Sik Yang ,  Jin-Man Kim ,  Young-Min Min ,  Chang-Hyun Jo

    发明人： Yun-Sik Yang ,  Jin-Man Kim ,  Young-Min Min ,  Chang-Hyun Jo

    IPC分类号： C23C1600

    CPC分类号： H01L21/67253 ,  C23C14/566 ,  F15B11/042 ,  F15B11/044 ,  F15B2211/30525 ,  F15B2211/3138 ,  F15B2211/327 ,  F15B2211/40515 ,  F15B2211/41527 ,  F15B2211/455 ,  F15B2211/46 ,  F15B2211/7053 ,  F15B2211/75 ,  H01L21/67017 ,  Y10S414/139

    摘要： An input/output valve switching apparatus of a semiconductor manufacturing system minimizes a vibration set up while operating an input/output valve for opening and closing a wafer-transfer passage that connects chambers of the system. The switching apparatus includes a valve actuator having a close port and an open port, a first fluid line connected to the close port, a second fluid line connected to the open port, first flow regulators installed in the first and second fluid lines, respectively, to regulate the flow rate of fluid, and second fluid flow regulators installed in the first and second fluid lines to regulate the flow rate of the fluid that has passed. The second fluid flow regulators can prevent a rapid introduction of the fluid into the actuator.

    摘要翻译： 半导体制造系统的输入/输出阀开关装置在操作用于打开和关闭连接系统的腔室的晶片传送通道的输入/输出阀时最小化振动。 开关装置包括具有关闭端口和开放端口的阀致动器，连接到关闭端口的第一流体管线，连接到开放端口的第二流体管线，分别安装在第一和第二流体管线中的第一流量调节器， 以调节流体的流量，以及第二流体流量调节器，其安装在第一和第二流体管线中，以调节流过的流体的流量。 第二流体流量调节器可以防止流体快速引入致动器。

    Semiconductor etching apparatus
    9.
    发明授权
    Semiconductor etching apparatus 有权
    半导体蚀刻装置

    公开(公告)号：US07764483B2

    公开(公告)日：2010-07-27

    申请号：US11709400

    申请日：2007-02-22

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    IPC分类号： H02N13/00

    CPC分类号： H01L21/68735 ,  H01L21/6831

    摘要： There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

    摘要翻译： 提供了一种半导体蚀刻装置，其在蚀刻过程中除去静电卡盘（ESC）的上表面上残留的颗粒，从而防止夹紧力降低并使氦泄漏最小化。 为了防止由于晶片夹紧故障引起的蚀刻工艺的故障，通过在晶片脱扣或转印时防止聚合物落下于ESC的上部，半导体蚀刻装置包括：选择性地保持晶片的ESC 进入并定位在室内，并且包括施加RF功率的下电极部分; 位于ESC的阶梯部分并分别围绕ESC的一侧的部件; 以及阻塞在ESC和部件之间形成的真空路径中的气流的气流阻塞部。