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45 条记录 (耗时 0.026 秒)

    Method of and an apparatus for regulating the temperature of an electrostatic chuck
    1.
    发明授权
    Method of and an apparatus for regulating the temperature of an electrostatic chuck 有权
    用于调节静电卡盘的温度的方法和装置

    公开(公告)号：US06684652B2

    公开(公告)日：2004-02-03

    申请号：US10134729

    申请日：2002-04-30

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Sang-Jun Chun ,  Young-Min Min

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Sang-Jun Chun ,  Young-Min Min

    IPC分类号： F25D1702

    CPC分类号： H01L21/67248 ,  F25D17/02 ,  H01L21/6831

    摘要： A refrigeration system regulates the temperature of an electrostatic wafer chuck disposed in a process chamber. The refrigeration system includes a heat exchanger disposed in a heat exchange relationship with the electrostatic chuck, a refrigerator, a temperature sensor, and a temperature controller for controlling the refrigerator to cool the coolant withdrawn from the heat exchanger to a desired temperature in response to the temperature detected by the temperature sensor. The heat exchanger forms a coolant passageway inside the electrostatic chuck, and the refrigerator is disposed outside the process chamber. The temperature sensor is disposed within the body of the electrostatic chuck. The temperature of the electrostatic chuck can be regulated so as to be maintained nearly constant because the temperature used to control the cooling of the coolant is measured directly from the body of the electrostatic chuck.

    摘要翻译： 制冷系统调节设置在处理室中的静电晶片卡盘的温度。 制冷系统包括与静电卡盘热交换设置的热交换器，冰箱，温度传感器和温度控制器，用于控制冰箱以将从热交换器排出的冷却剂冷却至期望的温度 温度由温度传感器检测。 热交换器在静电卡盘内形成冷却剂通道，并且冰箱设置在处理室的外部。 温度传感器设置在静电卡盘的主体内。 由于用于控制冷却剂的冷却的温度直接从静电卡盘的主体测量，静电卡盘的温度可以被调节以保持几乎恒定。

    Semiconductor etching apparatus
    4.
    发明申请
    Semiconductor etching apparatus 有权
    半导体蚀刻装置

    公开(公告)号：US20080066867A1

    公开(公告)日：2008-03-20

    申请号：US11709400

    申请日：2007-02-22

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    IPC分类号： C23F1/00

    CPC分类号： H01L21/68735 ,  H01L21/6831

    摘要： There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

    摘要翻译： 提供了一种半导体蚀刻装置，其在蚀刻过程中除去静电卡盘（ESC）的上表面上残留的颗粒，从而防止夹紧力降低并使氦泄漏最小化。 为了防止由于晶片夹紧故障引起的蚀刻工艺的故障，通过在晶片脱扣或转印时防止聚合物落下于ESC的上部，半导体蚀刻装置包括：选择性地保持晶片的ESC 进入并定位在室内，并且包括施加RF功率的下电极部分; 位于ESC的阶梯部分并分别围绕ESC的一侧的部件; 以及阻塞在ESC和部件之间形成的真空路径中的气流的气流阻塞部。

    Semiconductor etching apparatus
    5.
    发明授权
    Semiconductor etching apparatus 有权
    半导体蚀刻装置

    公开(公告)号：US07764483B2

    公开(公告)日：2010-07-27

    申请号：US11709400

    申请日：2007-02-22

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    IPC分类号： H02N13/00

    CPC分类号： H01L21/68735 ,  H01L21/6831

    摘要： There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

    摘要翻译： 提供了一种半导体蚀刻装置，其在蚀刻过程中除去静电卡盘（ESC）的上表面上残留的颗粒，从而防止夹紧力降低并使氦泄漏最小化。 为了防止由于晶片夹紧故障引起的蚀刻工艺的故障，通过在晶片脱扣或转印时防止聚合物落下于ESC的上部，半导体蚀刻装置包括：选择性地保持晶片的ESC 进入并定位在室内，并且包括施加RF功率的下电极部分; 位于ESC的阶梯部分并分别围绕ESC的一侧的部件; 以及阻塞在ESC和部件之间形成的真空路径中的气流的气流阻塞部。

    RF matching unit
    7.
    发明授权
    RF matching unit 有权
    射频匹配单元

    公开(公告)号：US06816029B2

    公开(公告)日：2004-11-09

    申请号：US09935582

    申请日：2001-08-24

    申请人： Dae-Kyu Choi ,  Young-Min Min ,  Sang-Mun Chon ,  Yun-Sik Yang ,  Jin-Man Kim

    发明人： Dae-Kyu Choi ,  Young-Min Min ,  Sang-Mun Chon ,  Yun-Sik Yang ,  Jin-Man Kim

    IPC分类号： H03H738

    CPC分类号： H01J37/32082 ,  H01F2021/125 ,  H01J37/32183

    摘要： An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.

    摘要翻译： 一种用于将RF发生器的阻抗与RF负载的阻抗相匹配的装置，用于通过使用等离子体制造半导体器件。 该装置包括耦合到可变电容器和不变电容器的可变电感器，该可变电感器具有串联并彼此相邻布置的彼此电耦合的两个电感器。 两个电感器中的至少一个被可移动地设置，以使一个电感器的磁通量与另一个电感器的磁通量相互干扰，从而控制可变电感器的电感。 在等离子体增强半导体晶片处理系统的情况下，该装置可以减少在RF发生器和RF负载之间实现RF匹配所需的时间，从而延长设备的使用寿命。

    METHODS AND APPARATUS FOR SEMICONDUCTOR ETCHING INCLUDING AN ELECTRO STATIC CHUCK
    9.
    发明申请
    METHODS AND APPARATUS FOR SEMICONDUCTOR ETCHING INCLUDING AN ELECTRO STATIC CHUCK 审中-公开
    用于半导体蚀刻的方法和装置，包括电子静态卡盘

    公开(公告)号：US20080194113A1

    公开(公告)日：2008-08-14

    申请号：US12106484

    申请日：2008-04-21

    申请人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    发明人： Jin-Man Kim ,  Yun-Sik Yang ,  Young-Min Min ,  Sang-Ho Kim

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/6831 ,  H01J37/32642 ,  H01L21/68735

    摘要： There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

    摘要翻译： 提供了一种半导体蚀刻装置，其在蚀刻过程中除去静电卡盘（ESC）的上表面上残留的颗粒，从而防止夹紧力降低并使氦泄漏最小化。 为了防止由于晶片夹紧故障引起的蚀刻工艺的故障，通过在晶片脱扣或转印时防止聚合物落下于ESC的上部，半导体蚀刻装置包括：选择性地保持晶片的ESC 进入并定位在室内，并且包括施加RF功率的下电极部分; 位于ESC的阶梯部分并分别围绕ESC的一侧的部件; 以及阻塞在ESC和部件之间形成的真空路径中的气流的气流阻塞部。

    Method for generating gas plasma
    10.
    发明授权
    Method for generating gas plasma 有权
    产生气体等离子体的方法

    公开(公告)号：US07193369B2

    公开(公告)日：2007-03-20

    申请号：US10368344

    申请日：2003-02-20

    申请人： Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

    发明人： Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

    IPC分类号： H01J7/24

    CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32357 ,  Y02C20/30 ,  Y02P70/605

    摘要： A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

    摘要翻译： 一种用于产生等离子体的方法。 气体沿着与主磁场的磁力线相同位移的流路流动，向气体施加高频交流电流，从而产生气体等离子体。 例如，气体沿第一方向流过管道。 电力沿着第一方向大致沿管道传导。 并且沿着在管中流动的气体沿着第二方向（例如，垂直于第一方向）施加磁场，使得在管中感应出等离子体。