公开(公告)号：US20120288432A1

公开(公告)日：2012-11-15

申请号：US13267490

申请日：2011-10-06

申请人： Jin-Seok LEE ,  Bo-Yun JANG ,  Young-Soo AHN

发明人： Jin-Seok LEE ,  Bo-Yun JANG ,  Young-Soo AHN

IPC分类号： C01B33/02 ,  C30B15/18 ,  C30B15/30 ,  C30B15/10

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

摘要翻译： 本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置，其可由于双坩埚结构而被再利用。 该装置包括用于硅熔化的双坩埚，其中加入原料硅，加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器，控制双坩埚旋转和升高的坩埚驱动单元， 设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。 双坩埚具有在其上侧开口的容器形状，并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚 坩。

公开(公告)号：US20110303290A1

公开(公告)日：2011-12-15

申请号：US13158490

申请日：2011-06-13

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

IPC分类号： H01L31/0264 ,  H01L31/02 ,  C03B19/02 ,  C03B5/23 ,  C01B33/00

CPC分类号： C30B15/007 ,  C30B15/06 ,  C30B15/14 ,  C30B29/06

摘要： The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm3/h.

摘要翻译： 本公开提供了一种用于在连续铸造期间使用惰性气体吹制制造硅衬底以提供优异的生产率和表面质量的方法和装置。 该装置包括：原料硅供给装置，通过原料硅供给装置配置的硅熔融单元，熔融原料硅以形成熔融硅;熔融硅储存单元，储存从硅熔融单元供给的熔融硅;以及 点击熔融硅以提供具有恒定厚度的硅熔体，转移单元，转移从熔融硅储存单元抽出的硅熔体;以及冷却单元，冷却由转印单元转移的硅熔体。 这里，冷却单元通过以0.1〜2.5Nm 3 / h的速度吹入惰性气体来冷却硅熔体。

公开(公告)号：US20110305891A1

公开(公告)日：2011-12-15

申请号：US13158516

申请日：2011-06-13

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

IPC分类号： C01B33/02 ,  B32B5/00 ,  C01B33/021 ,  B28B5/02

CPC分类号： C30B28/10 ,  C30B15/007 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, and a method for manufacturing a silicon substrate using the same. The apparatus includes a raw silicon feeder, a silicon melting unit melting raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer board transferring the tapped silicon melt, and a silicon substrate forming unit cooling the silicon melt transferred by the transfer board to form a silicon substrate. The molten silicon stored in the molten silicon storage unit has a surface temperature of 1300˜1500° C., the transfer board is preheated to 700˜1400° C., and a transfer time of the silicon substrate after tapping the molten silicon from the molten silicon storage unit is 0.5˜3.5 seconds.

摘要翻译： 本公开内容提供了一种使用连续铸造制造用于太阳能电池的硅衬底的装置，以及使用该装置制造硅衬底的方法。 该装置包括原硅进料器，熔融原料硅以形成熔融硅的硅熔融单元，存储从硅熔融单元供应的熔融硅的熔融硅储存单元，并且对熔融硅进行开采以提供具有恒定厚度的硅熔体， 转移层的硅熔体的转移板，以及冷却由转印板转移的硅熔体形成硅衬底的硅衬底形成单元。 存储在熔融硅储存单元中的熔融硅的表面温度为1300〜1500℃，将转印板预热至700〜1400℃，从硅中分离出熔融硅后的硅基板的转印时间 熔融硅储存单元为0.5〜3.5秒。

公开(公告)号：US20120251710A1

公开(公告)日：2012-10-04

申请号：US13267474

申请日：2011-10-06

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

IPC分类号： C01B33/113 ,  B05D5/12 ,  B01J19/00 ,  C23C16/26 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： H01M4/049 ,  B01J3/006 ,  B82Y30/00 ,  B82Y40/00 ,  C01B33/181 ,  C01P2004/64 ,  H01M4/0428 ,  H01M4/483 ,  Y10T428/2982

摘要： The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.

摘要翻译： 本公开内容提供了制造具有优异挥发性的高纯度SiO x纳米颗粒的方法及其制造方法，其能够通过感应加热熔融硅并将气体注入熔融硅的表面而大量生产SiO x纳米颗粒。 该装置包括：真空室，其中装有原料硅的石墨坩埚，石墨坩埚安装在真空室内;感应熔化部，其通过感应加热石墨坩埚中接收的硅材料形成熔融硅;气体 将注入气体的石油坩埚与熔融硅的表面直接接触的集尘器，以及设置在石墨坩埚上方的集电体，收集由熔融硅与注入气体反应产生的SiO x蒸气。

公开(公告)号：US20120292825A1

公开(公告)日：2012-11-22

申请号：US13115588

申请日：2011-05-25

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

IPC分类号： B29C39/38

CPC分类号： B22D11/045 ,  C01B33/037 ,  C30B11/001 ,  C30B11/003 ,  C30B28/10 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1092

摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

摘要翻译： 本公开内容提供一种使用连续铸造制造用于太阳能电池的硅衬底的装置，其可以提高硅衬底的质量，生产率和能量转换效率。 该装置包括：坩埚单元，被配置为接收原料硅并具有排出口;加热单元，设置在坩埚单元的外壁和外部底表面，并加热坩埚单元以形成熔融硅;铸造单元， 硅进入硅衬底，冷却单元快速冷却硅衬底;以及转移单元，其设置在冷却单元的一端并转移硅衬底。 铸造单元包括具有限定在其中以与排出口水平连接的铸造空间的铸造单元主体和预热铸造单元主体以控制硅基板的凝固温度的辅助加热机构。

公开(公告)号：US20120261694A1

公开(公告)日：2012-10-18

申请号：US13273665

申请日：2011-10-14

申请人： Bo-Yun JANG ,  Sung-Soon PARK ,  Joo-Seok PARK

发明人： Bo-Yun JANG ,  Sung-Soon PARK ,  Joo-Seok PARK

IPC分类号： H01L33/44 ,  C09K11/78

CPC分类号： C09K11/0883 ,  C09K11/7734 ,  H01L33/502 ,  H05B33/145

摘要： The present disclosure provides α-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0≦x≦0.2, 2.6≦y≦3.0, and 0.6≦a≦0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.

摘要翻译： 本公开提供了α-SiAlON荧光体，其制备方法和使用其的LED芯片封装。 该方法包括称重和混合Ca0.8-xRexAlaySi12-yO1.2N14.8原料（Re为稀土元素，0＆nlE; x＆nlE; 0.2,2.6＆nlE; y＆nlE; 3.0和0.6＆nlE; a＆nlE; 0.95） ，并通过常压烧结烧结混合原料，以制备具有Ca0.8-xRexAlaySi12-yO1.2N14.8组成的荧光体。

公开(公告)号：US20100203334A1

公开(公告)日：2010-08-12

申请号：US12605838

申请日：2009-10-26

申请人： Bo-Yun JANG ,  Chang-Hyun Ko ,  Jeong-Chul Lee ,  Joon-Soo Kim ,  Joo-Seok Park

发明人： Bo-Yun JANG ,  Chang-Hyun Ko ,  Jeong-Chul Lee ,  Joon-Soo Kim ,  Joo-Seok Park

IPC分类号： B01J19/08 ,  B32B5/16

CPC分类号： B01J19/088 ,  B01J2219/0883 ,  B01J2219/0894 ,  B82Y30/00 ,  B82Y40/00 ,  C01B33/027 ,  H05H1/46 ,  H05H2001/4667 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T428/2982

摘要： The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.

摘要翻译： 本公开涉及一种用于制造硅纳米晶体的装置，其可以通过精细调节由ICP线圈产生的等离子体区域来最小化等离子体扩散。 该装置包括具有绕其外壁缠绕有ICP线圈的反应器和插入反应器中的管，其中用于形成硅纳米晶体的初级气体和用于硅纳米晶体的表面反应的二次气体通过 内侧和外侧。