公开(公告)号：US20160197086A1

公开(公告)日：2016-07-07

申请号：US15070247

申请日：2016-03-15

Applicant: JinGyun KIM ,  Myoungbum LEE ,  Seungmok SHIN

Inventor： JinGyun KIM ,  Myoungbum LEE ,  Seungmok SHIN

IPC: H01L27/115 ,  H01L23/522

CPC classification number: H01L27/1157 ,  H01L21/28282 ,  H01L23/5226 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device including forming a charge storage layer, and forming a first tunnel insulating layer covering the charge storage layer, the forming of the first tunnel insulating layer including heat treating the charge storage layer.

Abstract translation: 一种制造半导体器件的方法，包括形成电荷存储层，以及形成覆盖电荷存储层的第一隧道绝缘层，形成包括对电荷存储层进行热处理的第一隧道绝缘层。

公开(公告)号：US20130273728A1

公开(公告)日：2013-10-17

申请号：US13912441

申请日：2013-06-07

Applicant: JinGyun KIM ,  Myoungbum LEE ,  Seungmok SHIN

Inventor： JinGyun KIM ,  Myoungbum LEE ,  Seungmok SHIN

IPC: H01L21/28

CPC classification number: H01L27/1157 ,  H01L21/28282 ,  H01L23/5226 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device including forming a charge storage layer, and forming a first tunnel insulating layer covering the charge storage layer, the forming of the first tunnel insulating layer including heat treating the charge storage layer.

Abstract translation: 一种制造半导体器件的方法，包括形成电荷存储层，以及形成覆盖电荷存储层的第一隧道绝缘层，形成包括对电荷存储层进行热处理的第一隧道绝缘层。

公开(公告)号：US20130005104A1

公开(公告)日：2013-01-03

申请号：US13615890

申请日：2012-09-14

Applicant: ZongLiang HUO ,  Myoungbum LEE ,  Kihyun HWANG ,  Seungmok SHIN ,  Sunjung KIM

Inventor： ZongLiang HUO ,  Myoungbum LEE ,  Kihyun HWANG ,  Seungmok SHIN ,  Sunjung KIM

IPC: H01L21/336

CPC classification number: H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/792 ,  H01L29/7926

Abstract: Provided are a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a stacked structure, a semiconductor pattern, an information storage layer, and a fixed charge layer. The stacked structure may be disposed over a semiconductor substrate. The stacked structure may include conductive patterns and interlayer dielectric patterns alternately stacked therein. The semiconductor pattern may be connected to the semiconductor substrate by passing through the stacked structure. The information storage layer may be disposed between the semiconductor pattern and the conductive patterns. The fixed charge layer may be disposed between the semiconductor pattern and the interlayer dielectric pattern. The fixed charge layer may include fixed charges. Electrical polarity of the fixed charges may be equal to electrical polarity of majority carriers of the semiconductor pattern.

Abstract translation: 提供一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括堆叠结构，半导体图案，信息存储层和固定电荷层。 堆叠结构可以设置在半导体衬底上。 层叠结构可以包括交替堆叠在其中的导电图案和层间电介质图案。 半导体图案可以通过层叠结构连接到半导体衬底。 信息存储层可以设置在半导体图案和导电图案之间。 固定电荷层可以设置在半导体图案和层间电介质图案之间。 固定电荷层可以包括固定电荷。 固定电荷的电极性可以等于半导体图案的多数载流子的电极性。

公开(公告)号：US20110101443A1

公开(公告)日：2011-05-05

申请号：US12894615

申请日：2010-09-30

Applicant: ZongLiang HUO ,  Myoungbum LEE ,  Kihyun HWANG ,  Seungmok SHIN ,  Sunjung KIM

Inventor： ZongLiang HUO ,  Myoungbum LEE ,  Kihyun HWANG ,  Seungmok SHIN ,  Sunjung KIM

IPC: H01L29/792

CPC classification number: H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/792 ,  H01L29/7926

Abstract: Provided are a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a stacked structure, a semiconductor pattern, an information storage layer, and a fixed charge layer. The stacked structure may be disposed over a semiconductor substrate. The stacked structure may include conductive patterns and interlayer dielectric patterns alternately stacked therein. The semiconductor pattern may be connected to the semiconductor substrate by passing through the stacked structure. The information storage layer may be disposed between the semiconductor pattern and the conductive patterns. The fixed charge layer may be disposed between the semiconductor pattern and the interlayer dielectric pattern. The fixed charge layer may include fixed charges. Electrical polarity of the fixed charges may be equal to electrical polarity of majority carriers of the semiconductor pattern.

Abstract translation: 提供一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括堆叠结构，半导体图案，信息存储层和固定电荷层。 层叠结构可以设置在半导体衬底上。 层叠结构可以包括交替堆叠在其中的导电图案和层间电介质图案。 半导体图案可以通过层叠结构连接到半导体衬底。 信息存储层可以设置在半导体图案和导电图案之间。 固定电荷层可以设置在半导体图案和层间电介质图案之间。 固定电荷层可以包括固定电荷。 固定电荷的电极性可以等于半导体图案的多数载流子的电极性。

公开(公告)号：US20120044191A1

公开(公告)日：2012-02-23

申请号：US12960078

申请日：2010-12-03

Applicant: Seungmok SHIN

Inventor： Seungmok SHIN

IPC: G06F3/045 ,  G03F7/20

CPC classification number: G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04111

Abstract: A method of manufacturing a touch screen panel includes a first process, a second process, and a third process. Each of a plurality of first electrode serials includes a plurality of first electrode patterns which are separated from each other, neighboring first electrode patterns are electrically connected to each other via a first connection pattern, and a first insulation pattern electrically insulates the first electrode serial from the second electrode serial at an intersection of the first electrode serial and the second electrode serial.

Abstract translation: 一种制造触摸屏面板的方法包括第一处理，第二处理和第三处理。 多个第一电极序列中的每一个包括彼此分离的多个第一电极图案，相邻的第一电极图案经由第一连接图案彼此电连接，并且第一绝缘图案将第一电极序列与第 第二电极串联在第一电极串联和第二电极序列的交点处。