公开(公告)号：US07972915B2

公开(公告)日：2011-07-05

申请号：US11564780

申请日：2006-11-29

申请人： Jing Chen ,  Yong Cai ,  Kei May Lau

发明人： Jing Chen ,  Yong Cai ,  Kei May Lau

IPC分类号： H01L21/338

CPC分类号： H01L29/7787 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/66462

摘要： A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.

摘要翻译： 公开了利用增强型和耗尽型AlGaN / GaN异质结场效应晶体管（HFET）的单片集成的方法和器件。 首先定义HFET的源极和漏极欧姆接触。 然后限定耗尽型HFET的栅电极。 然后使用基于氟化物的等离子体处理和样品的高温栅极退火来限定增强型HFET的栅电极。 器件隔离通过台面蚀刻或基于氟化物的等离子体处理来实现。 该方法为在高密度和高速应用中有利的基于GaN的集成电路提供了一个完整的平面工艺。

公开(公告)号：US07932539B2

公开(公告)日：2011-04-26

申请号：US11564766

申请日：2006-11-29

申请人： Jing Chen ,  Yong Cai ,  Kei May Lau

发明人： Jing Chen ,  Yong Cai ,  Kei May Lau

IPC分类号： H01L29/66

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7787

摘要： A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).

摘要翻译： 使用氟基等离子浸渍或离子注入制造AlGaN / GaN增强型异质结构场效应晶体管（HFET）的方法。 该方法包括：1）产生栅极图案; 2）将栅极区域中的AlGaN / GaN异质结构以自对准的方式暴露于作为处理掩模的光致抗蚀剂进行氟基等离子体处理; 3）将栅极金属沉积到等离子体处理的AlGaN / GaN异质结构表面; 4）除栅极外除金属; 和5）样品的高温后栅极退火。 该方法可用于将HFET的阈值电压移向更正的正值，并最终将耗尽型HFET转换为增强型HFET（E-HFET）。

公开(公告)号：US08044432B2

公开(公告)日：2011-10-25

申请号：US11564795

申请日：2006-11-29

申请人： Jing Chen ,  Kei May Lau

发明人： Jing Chen ,  Kei May Lau

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

摘要： Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can be completely suppressed in LDD-HEMTs with no significant degradation in gains and cutoff frequencies.

摘要翻译： 用于制造AlGaN / GaN常关高电子迁移率晶体管（HEMT）的方法和装置。 使用基于氟（电负离子的）等离子体处理或低能离子注入来改变漏极侧表面场分布而不使用场板电极。 可以改善截止状态击穿电压，并且在LDD-HEMT中可以完全抑制电流崩溃，而增益和截止频率没有明显的降低。

公开(公告)号：US08642363B2

公开(公告)日：2014-02-04

申请号：US13466660

申请日：2012-05-08

申请人： Kei May Lau ,  Zhaojun Liu

发明人： Kei May Lau ,  Zhaojun Liu

IPC分类号： H01L21/00

CPC分类号： G09G3/32 ,  G09G2300/0452 ,  G09G2300/0842 ,  H01L27/156 ,  H01L27/3265 ,  H01L33/504 ,  H01L33/508 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using PMOS process, NMOS process, or CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the PMOS/NMOS/CMOS process can be eliminated.

摘要翻译： 使用倒装芯片技术制造了高分辨率，有源矩阵（AM）编程单片发光二极管（LED）微阵列。 制造工艺包括LED微阵列和AM面板的制造，并使用倒装芯片技术组合所得到的LED微阵列和AM面板。 LED微阵列在蓝宝石衬底上生长和制造，AM面板可以使用PMOS工艺，NMOS工艺或CMOS工艺制造。 同一行中的LED像素共享连接到AM面板的地面的公共N总线，而LED像素的p电极被电分离，使得每个p电极独立地连接到安装在驱动电路上的驱动电路的输出 AM面板。 LED微阵列被倒装贴合到AM面板上，使得AM面板分别控制LED像素，并且LED像素表现出优异的发射均匀性。 根据该结构，可以消除LED工艺与PMOS / NMOS / CMOS工艺之间的不兼容性。

公开(公告)号：US08557616B2

公开(公告)日：2013-10-15

申请号：US13130442

申请日：2010-06-01

申请人： Kei May Lau ,  Chi Wing Keung ,  Zhaojun Liu

发明人： Kei May Lau ,  Chi Wing Keung ,  Zhaojun Liu

IPC分类号： H01L21/00

CPC分类号： H01L33/08 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/156 ,  H01L33/40

摘要： A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated.

摘要翻译： 使用倒装芯片技术制造了高分辨率，有源矩阵（AM）编程单片发光二极管（LED）微阵列。 制造工艺包括LED微阵列和AM面板的制造，并使用倒装芯片技术组合所得到的LED微阵列和AM面板。 LED微阵列在蓝宝石衬底上生长和制造，AM面板可以使用CMOS工艺制造。 同一行中的LED像素共享连接到AM面板的地面的公共N总线，而LED像素的p电极被电分离，使得每个p电极独立地连接到安装在驱动电路上的驱动电路的输出 AM面板。 LED微阵列被倒装贴合到AM面板上，使得AM面板分别控制LED像素，并且LED像素表现出优异的发射均匀性。 根据该结构，可以消除LED工艺与CMOS工艺之间的不兼容性。

公开(公告)号：US20110309378A1

公开(公告)日：2011-12-22

申请号：US13130442

申请日：2010-06-01

申请人： Kei May Lau ,  Chi Wing Keung ,  Zhaojun Liu

发明人： Kei May Lau ,  Chi Wing Keung ,  Zhaojun Liu

IPC分类号： H01L33/62

CPC分类号： H01L33/08 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/156 ,  H01L33/40

摘要： A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated.

摘要翻译： 使用倒装芯片技术制造了高分辨率，有源矩阵（AM）编程单片发光二极管（LED）微阵列。 制造工艺包括LED微阵列和AM面板的制造，并使用倒装芯片技术组合所得到的LED微阵列和AM面板。 LED微阵列在蓝宝石衬底上生长和制造，AM面板可以使用CMOS工艺制造。 同一行中的LED像素共享连接到AM面板的地面的公共N总线，而LED像素的p电极被电分离，使得每个p电极独立地连接到安装在驱动电路上的驱动电路的输出 AM面板。 LED微阵列被倒装贴合到AM面板上，使得AM面板分别控制LED像素，并且LED像素表现出优异的发射均匀性。 根据该结构，可以消除LED工艺与CMOS工艺之间的不兼容性。