公开(公告)号：US20060214648A1

公开(公告)日：2006-09-28

申请号：US11388158

申请日：2006-03-24

申请人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su ,  Wei-Hsin Wei

发明人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su ,  Wei-Hsin Wei

IPC分类号： G05F1/00

CPC分类号： H02M3/157 ,  H02M3/1588 ,  Y02B70/1466

摘要： A plurality of switches, an inductor and two capacitors are configured to be a boost-inverting converter. To operate the converter in a boost-inverting mode, a control apparatus and method switch the switches such that the inductor is energized in a first phase, the first capacitor is discharged to produce an inverting voltage in a second phase, and the second capacitor is charged to produce a boost voltage in a third phase. Therefore, the boost-inverting converter has lower peak inductor current and less power loss, and the limitation to the switch design for the boost-inverting converter is relaxed.

摘要翻译： 多个开关，电感器和两个电容器被配置为升压反相转换器。 为了在升压反转模式下操作转换器，控制装置和方法切换开关使得电感器在第一相中通电，第一电容器被放电以在第二相中产生反相电压，并且第二电容器 充电以在第三相中产生升压电压。 因此，升压反相转换器具有较低的峰值电感电流和较小的功率损耗，并且对升压反相转换器的开关设计的限制放宽。

公开(公告)号：US07327124B2

公开(公告)日：2008-02-05

申请号：US11388158

申请日：2006-03-24

申请人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su ,  Wei-Hsin Wei

发明人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su ,  Wei-Hsin Wei

IPC分类号： G05F1/577

CPC分类号： H02M3/157 ,  H02M3/1588 ,  Y02B70/1466

摘要： A plurality of switches, an inductor and two capacitors are configured to be a boost-inverting converter. To operate the converter in a boost-inverting mode, a control apparatus and method switch the switches such that the inductor is energized in a first phase, the first capacitor is discharged to produce an inverting voltage in a second phase, and the capacitor Cout1 is discharged to produce the inverting voltage and the second capacitor is charged to produce a boost voltage in a third phase. Therefore, the boost-inverting converter has lower peak inductor current and less power loss, and the limitation to the switch design for the boost-inverting converter is relaxed.

摘要翻译： 多个开关，电感器和两个电容器被配置为升压反相转换器。 为了在升压反转模式下操作转换器，控制装置和方法切换开关使得电感器在第一相中通电，第一电容器被放电以产生第二相的反相电压，并且电容器Cout 1 被放电以产生反相电压，并且第二电容器被充电以在第三相中产生升压电压。 因此，升压反相转换器具有较低的峰值电感电流和较小的功率损耗，并且对升压反相转换器的开关设计的限制放宽。

公开(公告)号：US20060109046A1

公开(公告)日：2006-05-25

申请号：US11108742

申请日：2005-04-19

申请人： Chun-Yen Huang ,  Hung-Der Su ,  Jing-Meng Liu ,  Chung-Lung Pai ,  Shih-Hui Chen ,  Yang-Ping Hung

发明人： Chun-Yen Huang ,  Hung-Der Su ,  Jing-Meng Liu ,  Chung-Lung Pai ,  Shih-Hui Chen ,  Yang-Ping Hung

IPC分类号： H03K17/00

CPC分类号： H03K17/0822 ,  H03K3/00 ,  H03K17/00 ,  H03K17/18 ,  H03K17/6871

摘要： A method, which is for determining switching state of a transistor-based switching device that includes a set of transistors, includes the steps of: applying a bias voltage to a transistor having a fastest response so as to dispose the transistors in the set in a desired transistor state; detecting a voltage level at a transistor having a slowest response to the bias voltage; and comparing the detected voltage level with a predetermined threshold voltage level in order to determine the switching state of the switching device. A transistor-based switching device is also disclosed.

摘要翻译： 一种用于确定包括一组晶体管的基于晶体管的开关器件的开关状态的方法包括以下步骤：将偏置电压施加到具有最快响应的晶体管，以将晶体管置于该组中的晶体管中 所需晶体管状态; 检测对所述偏置电压具有最慢响应的晶体管的电压电平; 以及将检测到的电压电平与预定阈值电压电平进行比较，以便确定开关器件的开关状态。 还公开了一种基于晶体管的开关器件。

公开(公告)号：US20050275711A1

公开(公告)日：2005-12-15

申请号：US11149292

申请日：2005-06-10

申请人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su

发明人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su

IPC分类号： B41J2/47 ,  H05B33/08

CPC分类号： H05B33/0857 ,  H05B33/0818 ,  H05B33/0827 ,  Y02B20/347

摘要： In a LED driver using a depletion mode transistor to serve as a current source, the depletion mode transistor is self-biased for providing a driving current to drive at least one LED, thereby requesting no additional control circuit to control the depletion mode transistor. The driving current is independent on the supply voltage coupled to the at least one LED, thereby requesting no additional voltage regulator, reducing the circuit size, and lowering the cost.

摘要翻译： 在使用耗尽型晶体管作为电流源的LED驱动器中，耗尽型晶体管是自偏置的，用于提供驱动电流以驱动至少一个LED，从而不需要额外的控制电路来控制耗尽型晶体管。 驱动电流独立于耦合到至少一个LED的电源电压，从而不需要额外的电压调节器，减小电路尺寸并降低成本。

公开(公告)号：US07728529B2

公开(公告)日：2010-06-01

申请号：US11149292

申请日：2005-06-10

申请人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su

发明人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su

IPC分类号： H05B37/02

CPC分类号： H05B33/0857 ,  H05B33/0818 ,  H05B33/0827 ,  Y02B20/347

摘要： In a LED driver using a depletion mode transistor to serve as a current source, the depletion mode transistor is self-biased for providing a driving current to drive at least one LED, thereby requesting no additional control circuit to control the depletion mode transistor. The driving current is independent on the supply voltage coupled to the at least one LED, thereby requesting no additional voltage regulator, reducing the circuit size, and lowering the cost.

摘要翻译： 在使用耗尽型晶体管作为电流源的LED驱动器中，耗尽型晶体管是自偏置的，用于提供驱动电流以驱动至少一个LED，从而不需要额外的控制电路来控制耗尽型晶体管。 驱动电流独立于耦合到至少一个LED的电源电压，从而不需要额外的电压调节器，减小电路尺寸并降低成本。

公开(公告)号：US07132717B2

公开(公告)日：2006-11-07

申请号：US11109772

申请日：2005-04-20

申请人： Hung-Der Su ,  Chun-Yen Huang ,  Chung-Lung Pai ,  Jing-Meng Liu

发明人： Hung-Der Su ,  Chun-Yen Huang ,  Chung-Lung Pai ,  Jing-Meng Liu

IPC分类号： H01L29/94

CPC分类号： H01L29/41758 ,  H01L23/4824 ,  H01L29/4238 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power metal oxide semiconductor transistor layout is disclosed. The power metal oxide semiconductor transistor layout uses network of conductive lead line as a connection or a network connection to connect source and drain regions thereby achieves advantages of a high uniformity of current, low Rds_on, much less power loss, an actual line density two times larger than that of conventional layouts and a strengthened resistance to electron migration.

摘要翻译： 公开了功率金属氧化物半导体晶体管布局。 功率金属氧化物半导体晶体管布局使用导电引线的网络作为连接或网络连接来连接源极和漏极区域，从而实现电流高均匀性，低Rds_on，更少功率损耗，实际线密度两倍的优点 大于常规布局，并且具有增强的电子迁移性。

公开(公告)号：US20060138565A1

公开(公告)日：2006-06-29

申请号：US11109772

申请日：2005-04-20

申请人： Hung-Der Su ,  Chun-Yen Huang ,  Chung-Lung Pai ,  Jing-Meng Liu

发明人： Hung-Der Su ,  Chun-Yen Huang ,  Chung-Lung Pai ,  Jing-Meng Liu

IPC分类号： H01L29/76

CPC分类号： H01L29/41758 ,  H01L23/4824 ,  H01L29/4238 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power metal oxide semiconductor transistor layout is disclosed. The power metal oxide semiconductor transistor layout uses network of conductive lead line as a connection or a network connection to connect source and drain regions thereby achieves advantages of a high uniformity of current, low Rds_on, much less power loss, an actual line density two times larger than that of conventional layouts and a strengthened resistance to electron migration.

公开(公告)号：US20050275375A1

公开(公告)日：2005-12-15

申请号：US11150191

申请日：2005-06-13

申请人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su

发明人： Jing-Meng Liu ,  Chung-Lung Pai ,  Hung-Der Su

IPC分类号： H02J7/00

CPC分类号： H02J7/0052

摘要： In a battery charger using a depletion mode transistor to serve as a current source, the depletion mode transistor is self-biased for generating a charging current to charge a battery, thereby requesting no additional control circuit to control the depletion mode transistor, reducing the circuit size, and lowering the cost.

摘要翻译： 在使用耗尽型晶体管作为电流源的电池充电器中，耗尽型晶体管是自偏压的，用于产生充电电流以对电池充电，从而不需要额外的控制电路来控制耗尽型晶体管，从而减少电路 尺寸，降低成本。

公开(公告)号：US07248084B2

公开(公告)日：2007-07-24

申请号：US11108742

申请日：2005-04-19

申请人： Chun-Yen Huang ,  Hung-Der Su ,  Jing-Meng Liu ,  Chung-Lung Pai ,  Shih-Hui Chen ,  Yang-Ping Hung

发明人： Chun-Yen Huang ,  Hung-Der Su ,  Jing-Meng Liu ,  Chung-Lung Pai ,  Shih-Hui Chen ,  Yang-Ping Hung

IPC分类号： H03K3/00

CPC分类号： H03K17/0822 ,  H03K3/00 ,  H03K17/00 ,  H03K17/18 ,  H03K17/6871

摘要： A method, which is for determining switching state of a transistor-based switching device that includes a set of transistors, includes the steps of: applying a bias voltage to a transistor having a fastest response so as to dispose the transistors in the set in a desired transistor state; detecting a voltage level at a transistor having a slowest response to the bias voltage; and comparing the detected voltage level with a predetermined threshold voltage level in order to determine the switching state of the switching device. A transistor-based switching device is also disclosed.

摘要翻译： 一种用于确定包括一组晶体管的基于晶体管的开关器件的开关状态的方法包括以下步骤：将偏置电压施加到具有最快响应的晶体管，以将晶体管置于该组中的晶体管中 所需晶体管状态; 检测对所述偏置电压具有最慢响应的晶体管的电压电平; 以及将检测到的电压电平与预定阈值电压电平进行比较，以便确定开关器件的开关状态。 还公开了一种基于晶体管的开关器件。

公开(公告)号：US07768033B2

公开(公告)日：2010-08-03

申请号：US12385720

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.