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    Methods for treating substrates in preparation for subsequent processes
    1.
    发明授权
    Methods for treating substrates in preparation for subsequent processes 有权
    处理底物的方法用于后续方法的制备

    公开(公告)号：US07884036B1

    公开(公告)日：2011-02-08

    申请号：US11777152

    申请日：2007-07-12

    申请人： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

    发明人： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

    IPC分类号： H01L21/00

    CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76849

    摘要： Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.

    摘要翻译： 呈现用于处理衬底以用于后续工艺的方法，所述方法包括：接收衬底，所述衬底包括导电区域和电介质区域; 以及以使得电介质区域被氧化以变得越来越亲水的方式将氧化剂施加到衬底上，以便能够在随后的工艺中进入导电区域，其中将电介质区域处理到大约1至 5个原子层。 在一些实施例中，方法还包括处理衬底，其中选择性地增强对导电区域的处理。 在一些实施方案中，氧化剂包括大气压等离子体和UV辐射。

    Methods for forming nickel oxide films for use with resistive switching memory devices/US
    3.
    发明授权
    Methods for forming nickel oxide films for use with resistive switching memory devices/US 失效
    用于形成用于电阻式开关存储器件的氧化镍膜的方法/ US

    公开(公告)号：US08609475B2

    公开(公告)日：2013-12-17

    申请号：US13602637

    申请日：2012-09-04

    申请人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

    发明人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

    IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

    CPC分类号： H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

    摘要： Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

    摘要翻译： 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

    METHODS FOR FORMING NICKEL OXIDE FILMS FOR USE WITH RESISTIVE SWITCHING MEMORY DEVICES/US
    5.
    发明申请
    METHODS FOR FORMING NICKEL OXIDE FILMS FOR USE WITH RESISTIVE SWITCHING MEMORY DEVICES/US 失效
    形成用于电阻开关存储器件/ US的镍氧化物膜的方法

    公开(公告)号：US20130230962A1

    公开(公告)日：2013-09-05

    申请号：US13602637

    申请日：2012-09-04

    申请人： Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    发明人： Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

    摘要： Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pretreating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

    摘要翻译： 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

    Methods for forming resistive switching memory elements
    7.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号：US07704789B2

    公开(公告)日：2010-04-27

    申请号：US11702967

    申请日：2007-02-05

    申请人： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    发明人： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    IPC分类号： H01L21/00

    CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

    摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    摘要翻译： 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。