-
1.发明授权Piezoelectric array with strain dependant conducting elements and method therefor 有权具有应变依赖导电元件的压电阵列及其方法公开(公告)号：US07183568B2
公开(公告)日：2007-02-27
申请号：US10326172
申请日：2002-12-23
申请人： Joerg Appenzeller , Phaedon Avouris , Richard Martel , James Anthony Misewich , Alejandro Gabriel Schrott
发明人： Joerg Appenzeller , Phaedon Avouris , Richard Martel , James Anthony Misewich , Alejandro Gabriel Schrott
IPC分类号： H01L29/06
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , H01L27/20
摘要： A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube structure.
摘要翻译： 一种用于压电器件的结构（和方法），包括一层压电材料。 安装纳米管结构使得压电材料的形状变化引起纳米管结构中的应力变化。
-
2.发明申请公开(公告)号：US20120142158A1
公开(公告)日：2012-06-07
申请号：US13368901
申请日：2012-02-08
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
IPC分类号： H01L21/336 , B82Y40/00
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
公开(公告)号：US08637374B2
公开(公告)日：2014-01-28
申请号：US13368901
申请日：2012-02-08
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
IPC分类号： H01L21/336 , H01L21/44 , H01L21/302 , H01L21/461
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
4.发明申请公开(公告)号：US20080017899A1
公开(公告)日：2008-01-24
申请号：US11835167
申请日：2007-08-07
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin Chan , Philip Collins , Richard Martel , Hon-Sum Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin Chan , Philip Collins , Richard Martel , Hon-Sum Wong
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
公开(公告)号：US08138491B2
公开(公告)日：2012-03-20
申请号：US12544436
申请日：2009-08-20
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
公开(公告)号：US07635856B2
公开(公告)日：2009-12-22
申请号：US11835167
申请日：2007-08-07
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
公开(公告)号：US07897960B2
公开(公告)日：2011-03-01
申请号：US12544412
申请日：2009-08-20
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
8.发明申请公开(公告)号：US20090309092A1
公开(公告)日：2009-12-17
申请号：US12544412
申请日：2009-08-20
申请人： JOERG APPENZELLER , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
发明人： JOERG APPENZELLER , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
IPC分类号： H01L29/12
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
9.发明申请公开(公告)号：US20050056826A1
公开(公告)日：2005-03-17
申请号：US10956851
申请日：2004-10-01
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin Chan , Philip Collins , Richard Martel , Hon-Sum Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin Chan , Philip Collins , Richard Martel , Hon-Sum Wong
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
10.发明申请公开(公告)号：US20100001260A1
公开(公告)日：2010-01-07
申请号：US12544436
申请日：2009-08-20
申请人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
发明人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L51/0516 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10S977/842 , Y10S977/938 , Y10S977/94
摘要： A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
摘要翻译： 自对准碳纳米管场效应晶体管半导体器件分别包括沉积在基板上的碳纳米管，分别形成在碳纳米管的第一端和第二端的源极和漏极，以及基本上形成的栅极 碳纳米管的一部分，通过电介质膜与碳纳米管分离。
-
-
-
-
-
-
-
-
-
搜索结果
19 条记录 (耗时 0.023 秒)
