Radiation-emitting semiconductor component and method for the production thereof
    8.
    发明授权
    Radiation-emitting semiconductor component and method for the production thereof 有权
    辐射发射半导体元件及其制造方法

    公开(公告)号:US07592636B2

    公开(公告)日:2009-09-22

    申请号:US10529625

    申请日:2003-09-23

    IPC分类号: H01L21/00 H01L23/495

    摘要: A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

    摘要翻译: 一种具有辐射透射性衬底(1)的辐射发射半导体部件,其底部布置有辐射产生层(2),其中衬底(1)具有倾斜的侧面区域(3),其中 衬底(1)的折射率大于辐射产生层的折射率,其中折射率差导致未发射的衬底区域(4),其中没有光子直接从辐射产生层 层,并且其中衬底(1)在未发光区域中具有基本上垂直的侧面区域(5)。 该组件的优点是可以从晶片获得更好的面积产率。

    Radiation-emitting semiconductor component and method for the production thereof
    9.
    发明申请
    Radiation-emitting semiconductor component and method for the production thereof 有权
    辐射发射半导体元件及其制造方法

    公开(公告)号:US20060124945A1

    公开(公告)日:2006-06-15

    申请号:US10529625

    申请日:2003-09-23

    IPC分类号: H01L33/00 H01L21/78

    摘要: A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

    摘要翻译: 一种具有辐射透射性衬底(1)的辐射发射半导体部件,其底部布置有辐射产生层(2),其中衬底(1)具有倾斜的侧面区域(3),其中 衬底(1)的折射率大于辐射产生层的折射率,其中折射率差导致未发射的衬底区域(4),其中没有光子直接从辐射产生层 层,并且其中衬底(1)在未发光区域中具有基本上垂直的侧面区域(5)。 该组件的优点是可以从晶片获得更好的面积产率。