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公开(公告)号：US20050116216A1
公开(公告)日：2005-06-02
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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2.发明授权Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers 失效用于生产单晶的晶种和用于生产SiC单晶或单晶SiC层的方法
公开(公告)号：US5985026A
公开(公告)日：1999-11-16
申请号：US23955
申请日：1998-02-17
申请人： Johannes Volkl , Rene Stein
发明人： Johannes Volkl , Rene Stein
摘要： A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased.
摘要翻译： 用于制造单晶的晶种组合物和SiC单晶或单晶SiC层的制造方法包括晶种，其表面具有作为从气相生长的单晶的结晶表面的第一部分区域，第二部分区域具有 一种对晶种和气相具有化学耐受性且在生长温度下不熔化的涂层。 结果，避免了晶种的热降解，并且生产的单晶的质量增加。
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3.发明申请RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SEMICONDUCTOR COMPONENT 有权辐射发射半导体元件和用于制造半导体元件的方法公开(公告)号：US20080179380A1
公开(公告)日：2008-07-31
申请号：US11567977
申请日：2006-12-07
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
IPC分类号： A47J36/02
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/02 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014
摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
摘要翻译： 辐射发射半导体组件具有改进的辐射效率。 半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。 多层结构邻接窗口的第一主表面。 为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。 凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。
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公开(公告)号：US20060289854A1
公开(公告)日：2006-12-28
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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公开(公告)号：US07106090B2
公开(公告)日：2006-09-12
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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6.发明申请公开(公告)号：US20050233484A1
公开(公告)日：2005-10-20
申请号：US11068599
申请日：2005-02-28
申请人： Wilhelm Stein , Johannes Volkl , Robert Walter , Oliver Kus , Roland Zeisel
发明人： Wilhelm Stein , Johannes Volkl , Robert Walter , Oliver Kus , Roland Zeisel
CPC分类号： H01L33/44
摘要： A radiation-emitting semiconductor chip (1) having a semiconductor layer sequence (3) comprising at least one active layer (2) that generates an electromagnetic radiation, and having a passivation layer (12) arranged on the radiation-emerging side of the semiconductor layer sequence (3), it being possible to set the degree of transmission of the semiconductor chip by means of the passivation layer.
摘要翻译： 一种辐射发射半导体芯片（1），其具有半导体层序列（3），该半导体层序列（3）包括产生电磁辐射的至少一个有源层（2），并且具有布置在半导体的辐射出射侧的钝化层 层序列（3），可以通过钝化层设定半导体芯片的透射度。
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公开(公告)号：US5968265A
公开(公告)日：1999-10-19
申请号：US13990
申请日：1998-01-27
申请人： Rene Stein , Roland Rupp , Johannes Volkl
发明人： Rene Stein , Roland Rupp , Johannes Volkl
摘要： A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal.
摘要翻译： 一种生产立方晶系SiC单晶的方法包括将SiC粉末或其它起始材料以高超压力溶解在溶剂中，并将单晶生长在晶种上。
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公开(公告)号：US07556974B2
公开(公告)日：2009-07-07
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a） 提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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9.发明授权
公开(公告)号：US5989340A
公开(公告)日：1999-11-23
申请号：US913278
申请日：1997-08-27
申请人： Dietrich Stephani , Johannes Volkl
发明人： Dietrich Stephani , Johannes Volkl
CPC分类号： C30B23/00 , C30B29/36 , Y10S117/90 , Y10T117/1016
摘要： A reaction chamber (2) is enclosed by a gas-tight wall (20), made of silicon carbide obtained by a CVD process at least on the inside (21) facing the reaction chamber (2). At least part of the silicon carbide of the wall (20) is sublimated and grown on a seed crystal (3) as a silicon carbide monocrystal (4).
摘要翻译： PCT No.PCT / DE95 / 01576 Sec。 371日期1997年8月27日第 102（e）日期1997年8月27日PCT提交1995年11月14日PCT公布。 公开号WO96 / 17113 日期：2006年6月6日反应室（2）由至少在面向反应室（2）的内侧（21）上通过CVD工艺制成的碳化硅制成的气密壁（20）包围。 壁（20）的碳化硅的至少一部分被升华并在作为碳化硅单晶（4）的晶种（3）上生长。
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公开(公告)号：US5707446A
公开(公告)日：1998-01-13
申请号：US530291
申请日：1995-09-29
申请人： Johannes Volkl , Peter Lanig
发明人： Johannes Volkl , Peter Lanig
CPC分类号： C30B23/06 , C30B23/002 , C30B29/36 , Y10T117/10
摘要： SiC single crystals are produced in a reaction chamber, in which there is a seed crystal for the separation of a SiC single crystal from the gas phase. The reaction chamber is connected to a storage chamber, which is at least partly filled with a supply of SiC, by a gas channel with a predetermined cross-section for conveying the SiC in the gas phase. The supply of SiC is sublimated in a heating device and a temperature gradient is adjusted in the reaction chamber. It is, thus, possible to produce SiC single crystals with any desired cross-sectional area and of high crystalline quality and single-crystal yield, because the conveyance rate of the gas molecules can be precisely adjusted.
摘要翻译： PCT No.PCT / DE94 / 00311 Sec。 371 1995年9月29日第 102（e）1995年9月29日PCT PCT 1994年3月21日PCT公布。 公开号WO94 / 23096 日期1994年10月13日在反应室中产生SiC单晶，其中存在用于从气相中分离SiC单晶的晶种。 反应室通过具有预定横截面的气体通道连接至至少部分地填充有SiC供应的储存室，用于在气相中输送SiC。 SiC的供应在加热装置中升华，并且在反应室中调节温度梯度。 因此，可以精确地调整气体分子的输送速率，从而可以制造具有所需横截面积和高结晶质量和单晶产率的SiC单晶。
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