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    Physical vapor deposition employing ion extraction from a plasma
    1.
    发明授权
    Physical vapor deposition employing ion extraction from a plasma 失效
    使用从等离子体离子提取的物理气相沉积

    公开(公告)号：US5482611A

    公开(公告)日：1996-01-09

    申请号：US133595

    申请日：1993-10-08

    申请人： John C. Helmer ,  Kwok F. Lai ,  Robert L. Anderson

    发明人： John C. Helmer ,  Kwok F. Lai ,  Robert L. Anderson

    IPC分类号： C23C14/35 ,  H01J23/10 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

    CPC分类号： H01J37/32192 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3497

    摘要： A sputter magnetron ion source for producing an intense plasma in a cathode container which ionizes a high and substantial percentage of the sputter cathode material and means for extracting the ions of the cathode material in a beam. The ion extraction means is implemented by a magnetic field cusp configuration with a null region adjacent to the open end of the cathode container. Ions so produced are able to be directed at right angles to a substrate being coated for efficient via filling.

    摘要翻译： 一种用于在阴极容器中产生强等离子体的溅射磁控管离子源，该离子源电离了高比例的溅射阴极材料，以及用于提取光束中阴极材料的离子的装置。 离子提取装置通过具有与阴极容器的开口端相邻的零点区域的磁场尖点构造来实现。 如此生产的离子能够与正被涂覆的基底成直角，有效地通过填充。

    Magnetron sputtering source for low pressure operation
    4.
    发明授权
    Magnetron sputtering source for low pressure operation 失效
    用于低压操作的磁控溅射源

    公开(公告)号：US5593551A

    公开(公告)日：1997-01-14

    申请号：US396366

    申请日：1995-02-28

    申请人： Kwok F. Lai

    发明人： Kwok F. Lai

    IPC分类号： C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  C23C14/34

    CPC分类号： H01J37/3494 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3452

    摘要： A magnetron sputtering source which is capable of very low pressure operation is disclosed. The source comprises a dish-shaped sputter target behind which is mounted a primary magnet for confining a plasma discharge adjacent to the front surface of the sputter target. A bucking magnet, positioned adjacent to the perimeter of the sputter target and, preferably, at the same level as the target, is used to prevent the magnetic field created by the primary magnet from spreading out at near the edge of the sputter target. This enables the source to operate at very low pressure and reduces the impedance of the discharge.

    摘要翻译： 公开了一种能够非常低压操作的磁控溅射源。 源包括碟形溅射靶，其后面安装有用于限制与溅射靶的前表面相邻的等离子体放电的初级磁体。 使用位于溅射靶的周边附近并且优选地与靶相同的平衡磁铁，以防止由主磁体产生的磁场在溅射靶的边缘附近扩展。 这使得源极能够在非常低的压力下工作并且减小放电的阻抗。

    Rotating magnet arrays for magnetron sputtering apparatus
    5.
    发明授权
    Rotating magnet arrays for magnetron sputtering apparatus 有权
    用于磁控溅射装置的旋转磁体阵列

    公开(公告)号：US07585399B1

    公开(公告)日：2009-09-08

    申请号：US11097464

    申请日：2005-03-31

    申请人： Kwok F. Lai ,  Houchin Tang, legal representative ,  Kang Song ,  Douglas B. Hayden

    发明人： Kwok F. Lai ,  Kang Song ,  Douglas B. Hayden

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3458

    摘要： In one embodiment, a magnetron sputtering apparatus includes one or more magnet arrays for moving ions or charged particles on at least two plasma discharge paths on a target. Charged particles on one of the plasma discharge paths are moved in one direction, while charged particles on the other plasma discharge path are moved in the opposite direction to reduce rotational shifting of deposition flux on the patterned substrates. The plasma discharge paths may be formed by two symmetric magnet arrays or a single asymmetric magnet array rotated from behind the target.

    摘要翻译： 在一个实施例中，磁控溅射装置包括一个或多个用于在目标上的至少两个等离子体放电路径上移动离子或带电粒子的磁体阵列。 等离子体放电路径中的一个上的带电粒子沿一个方向移动，而另一个等离子体放电路径上的带电粒子沿相反方向移动，以减少图案化衬底上的沉积磁通的旋转移动。 等离子体放电路径可以由两个对称的磁体阵列或从目标后面旋转的单个不对称磁体阵列形成。

    Null-field magnetron apparatus with essentially flat target
    6.
    发明授权
    Null-field magnetron apparatus with essentially flat target 有权
    具有基本平坦目标的空场磁控管装置

    公开(公告)号：US06683425B1

    公开(公告)日：2004-01-27

    申请号：US10068772

    申请日：2002-02-05

    申请人： Kwok F. Lai

    发明人： Kwok F. Lai

    IPC分类号： H01J2300

    CPC分类号： H01J37/3405 ,  H01J37/3423

    摘要： In one embodiment, a magnetron apparatus includes an essentially flat target having a low height-to-width ratio. The essentially flat target may be planar, dish-shaped, or stepped-shape, for example. A main magnet is located behind the flat target to provide main magnetic fields. Magnets located near the target and underneath a substrate may be configured to maintain a high density plasma and to control the flow of plasma onto the substrate.

    摘要翻译： 在一个实施例中，磁控管装置包括具有低高度比宽度的基本平坦的靶。 例如，基本平坦的靶可以是平面的，盘形的或阶梯状的。 主磁体位于平面目标的后面，以提供主磁场。 位于目标附近和衬底下方的磁体可被配置为保持高密度等离子体并且控制等离子体在衬底上的流动。