公开(公告)号：US5413670A

公开(公告)日：1995-05-09

申请号：US89210

申请日：1993-07-08

申请人： John G. Langan ,  Scott E. Beck ,  Brian S. Felker

发明人： John G. Langan ,  Scott E. Beck ,  Brian S. Felker

IPC分类号： H01L21/302 ,  C23C16/44 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22

CPC分类号： H01L21/02046 ,  C23C16/4405 ,  H01L21/31116 ,  Y10S134/902 ,  Y10S438/905

摘要： A method has been developed for the removal of silicon nitride and silicon dioxide, or other semiconductor materials from a surface of a wafer or CVD reactor. The method uses NF.sub.3, mixed with an electropositive diluent, preferably argon, at a given range of concentration, pressure, flowrate, and power to obtain the fastest possible etch rates. The etch rates of the film being processed can be caused to increase even as the concentration of NF.sub.3 in the diluent is decreased by choosing the proper diluent and operating conditions. Not only does this method increase the etch rate, thereby increasing the throughput of the reactor using this process, it also accomplishes this task at low concentrations of NF3 resulting in a lower cost.

摘要翻译： 已经开发了用于从晶片或CVD反应器的表面去除氮化硅和二氧化硅或其它半导体材料的方法。 该方法使用NF3，在浓度，压力，流量和功率的给定范围内与正电性稀释剂，优选氩混合，以获得最快的蚀刻速率。 即使通过选择适当的稀释剂和操作条件，稀释剂中NF 3的浓度降低，也可能导致正在处理的膜的蚀刻速率增加。 这种方法不仅可以提高蚀刻速率，从而提高反应器的生产率，而且还可以在低浓度的NF3下实现这一任务，从而降低成本。

公开(公告)号：US08161811B2

公开(公告)日：2012-04-24

申请号：US12641460

申请日：2009-12-18

申请人： Scott E. Beck ,  Paul P. Bey ,  Jamie Speldrich ,  Mohammed A. Javvad Qasimi

发明人： Scott E. Beck ,  Paul P. Bey ,  Jamie Speldrich ,  Mohammed A. Javvad Qasimi

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  H01L23/3142 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05599 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T29/49002 ,  H01L2924/00

摘要： A corrosion resistant flow sensor apparatus includes a flow sensor including a micromachinable substrate mounted on a package substrate that includes electrically conductive traces and substrate bond pads. The flow sensor includes a MEMS sensing structure for sensing a mass flow parameter and sensor bond pads coupled to the sensing structure. The sensor bond pads include a top metal layer on a metal diffusion barrier layer including a metal diffusion barrier layer sidewall. Bond wires couple the sensor bond pads to the substrate bond pads. A housing including sides and a top portion is around the flow sensor and includes a flow channel having an inlet and an outlet. A multi-layer corrosion protection coating includes a nm scale adhesion layer and a self assembled monolayer (SAM) is on the adhesion layer. The protection coating covers the sensor bond pads including the metal diffusion barrier layer sidewall.

摘要翻译： 耐腐蚀流量传感器装置包括流量传感器，其包括安装在包括导电迹线和衬底接合焊盘的封装衬底上的可微加工衬底。 流量传感器包括用于感测质量流量参数的MEMS感测结构和耦合到感测结构的传感器接合垫。 传感器接合焊盘包括在包括金属扩散阻挡层侧壁的金属扩散阻挡层上的顶部金属层。 接合线将传感器接合焊盘连接到衬底接合焊盘。 包括侧面和顶部的壳体围绕流量传感器并且包括具有入口和出口的流动通道。 多层防腐涂层包括纳米级粘附层，粘合层上自组装单层（SAM）。 保护涂层覆盖包括金属扩散阻挡层侧壁的传感器接合焊盘。

公开(公告)号：US07892488B2

公开(公告)日：2011-02-22

申请号：US11352774

申请日：2006-02-10

申请人： Jamie W. Speldrich ,  Scott E. Beck ,  Richard W. Gehman ,  Martin G. Murray ,  Ulrich Bonne

发明人： Jamie W. Speldrich ,  Scott E. Beck ,  Richard W. Gehman ,  Martin G. Murray ,  Ulrich Bonne

IPC分类号： G01N21/00 ,  G01F1/68

CPC分类号： G01F1/6845 ,  G01F15/006

摘要： A thermal liquid flow sensor and method of forming same. The sensor has a substrate and one or more sensing elements, disposed on the substrate, for sensing a property of a liquid. The liquid flow sensor, which can be for example a microsensor having a microbrick® structure, has a hydrophilic layer which is disposed on the substrate and covers the sensing element(s). The hydrophilic layer is preferably formed from a spin on glass material, such as for example a silicate or phosphosilicate. A silicon nitride layer can be disposed on the sensing element(s) and interpose the substrate and the hydrophilic layer. The silicon nitride layer can be oxidized, for example, by means of plasma oxidation or oxygen ion implantation so to form the hydrophilic layer thereon. A variety of other hydrophilic compounds can be utilized to form the hydrophilic layer such as, gold, palladium and diamond like carbon.

摘要翻译： 一种热液体流量传感器及其形成方法。 传感器具有衬底和设置在衬底上的一个或多个感测元件，用于感测液体的性质。 液体流量传感器可以是例如具有微结构的微传感器，其具有设置在基板上并覆盖感测元件的亲水层。 亲水层优选由旋涂在玻璃材料上形成，例如硅酸盐或磷硅酸盐。 氮化硅层可以设置在感测元件上并插入衬底和亲水层。 氮化硅层可以例如通过等离子体氧化或氧离子注入来氧化，从而在其上形成亲水层。 可以使用各种其它亲水性化合物来形成亲水层，例如金，钯和类似于金刚石的碳。

公开(公告)号：US07755466B2

公开(公告)日：2010-07-13

申请号：US11412460

申请日：2006-04-26

申请人： Scott E. Beck ,  Gilberto Morales

发明人： Scott E. Beck ,  Gilberto Morales

IPC分类号： H01C3/04

CPC分类号： G01F1/6845 ,  G01F1/6847

摘要： A flip-chip flow sensor has electrical components, such as temperature sensors and a heater, on the top of a substrate and has a channel formed in the bottom of the substrate. The channel is separated from the substrate's top by a membrane of substrate material. A fluid flowing through the channel is separated from a heater, upstream temperature sensor, downstream temperature sensor, bond pads, and wire bonds by the membrane. Heat flows through the membrane easily because the membrane is thin. As such, the electrical elements of the flow sensor, the bond pads and the wires are physically separated from a fluid flowing through the channel but can function properly because they are not thermally isolated.

摘要翻译： 倒装芯片流量传感器在基板的顶部具有诸如温度传感器和加热器的电气部件，并且在基板的底部形成通道。 通道由衬底材料的膜与衬底的顶部分离。 流经通道的流体与加热器，上游温度传感器，下游温度传感器，接合焊盘和膜的引线接合分离。 由于膜薄，热容易流过膜。 因此，流量传感器，接合焊盘和电线的电气元件与流过通道的流体物理分离，但是由于它们不是热隔离的，所以可以正常工作。