ENCAPSULATED POLAR MATERIALS AND METHODS OF PREPARATION
    3.
    发明申请
    ENCAPSULATED POLAR MATERIALS AND METHODS OF PREPARATION 审中-公开
    包埋极性材料和制备方法

    公开(公告)号:US20140127309A1

    公开(公告)日:2014-05-08

    申请号:US14122437

    申请日:2012-05-31

    摘要: The present invention meets one or more of the above needs and is a composition comprising plurality of capsules wherein the capsules comprise: a core of one or more highly polar liquids; one or more polar active materials dissolved in or dispersed in one or more highly polar liquids; a mixture of one or more polymers and one of more highly polar liquids; or a mixture of one or more polymers, one or more highly polar liquids and one or more polar active materials, and a shell comprising, particles in a polymer matrix or particles; wherein the thickness of the shell is sufficient to prevent passage of the highly polar liquid or the active material through the shell or to control the rate passage of the highly polar liquid or the active material through the shell with the proviso that the one or more polymers may be located in the core, in the polymer matrix of the shell or both.

    摘要翻译: 本发明满足上述一个或多个需求,并且是包含多个胶囊的组合物,其中胶囊包含:一种或多种高极性液体的芯; 一种或多种溶于或分散在一种或多种高极性液体中的极性活性物质; 一种或多种聚合物和更高极性液体之一的混合物; 或一种或多种聚合物,一种或多种高极性液体和一种或多种极性活性物质的混合物,以及包含聚合物基质或颗粒中的颗粒的壳; 其中壳体的厚度足以防止高极性液体或活性物质通过壳体,或者控制高极性液体或活性材料通过壳体的速率通过,条件是一种或多种聚合物 可以位于核心中,在壳的聚合物基质中或两者中。

    Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
    4.
    发明授权
    Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition 有权
    稳定,浓缩,水溶性纤维素自由化学机械抛光组合物

    公开(公告)号:US08440097B2

    公开(公告)日:2013-05-14

    申请号:US13039705

    申请日:2011-03-03

    IPC分类号: C09K13/00

    CPC分类号: H01L21/3212 C09G1/16

    摘要: A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

    摘要翻译: 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选的氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制造本发明的化学机械抛光组合物的方法和基板的化学机械抛光方法,包括:提供基板,其中所述基板是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

    Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
    5.
    发明申请
    Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition 有权
    稳定,浓缩,水溶性纤维素自由化学机械抛光组合物

    公开(公告)号:US20120225556A1

    公开(公告)日:2012-09-06

    申请号:US13039705

    申请日:2011-03-03

    IPC分类号: H01L21/306 C09K3/14 C09K13/00

    CPC分类号: H01L21/3212 C09G1/16

    摘要: A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

    摘要翻译: 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制造本发明的化学机械抛光组合物的方法和基板的化学机械抛光方法,包括:提供基板,其中所述基板是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

    Stable, concentratable chemical mechanical polishing composition and methods relating thereto
    6.
    发明申请
    Stable, concentratable chemical mechanical polishing composition and methods relating thereto 有权
    稳定,可浓缩的化学机械抛光组合物及其相关方法

    公开(公告)号:US20120225555A1

    公开(公告)日:2012-09-06

    申请号:US13039723

    申请日:2011-03-03

    IPC分类号: H01L21/306 C09K13/00

    CPC分类号: H01L21/3212 C09G1/16

    摘要: A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

    摘要翻译: 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 水溶性纤维素; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制备本发明的化学机械抛光组合物的方法和基材的化学机械抛光方法,包括:提供基材,其中所述基材是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

    Stable, concentratable chemical mechanical polishing composition and methods relating thereto
    7.
    发明授权
    Stable, concentratable chemical mechanical polishing composition and methods relating thereto 有权
    稳定,可浓缩的化学机械抛光组合物及其相关方法

    公开(公告)号:US08435896B2

    公开(公告)日:2013-05-07

    申请号:US13039723

    申请日:2011-03-03

    IPC分类号: H01L21/302 H01L21/461

    CPC分类号: H01L21/3212 C09G1/16

    摘要: A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

    摘要翻译: 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 水溶性纤维素; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制备本发明的化学机械抛光组合物的方法和基材的化学机械抛光方法,包括:提供基材,其中所述基材是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

    Manufacture of superabsorbents in high internal phase emulsions
    8.
    发明授权
    Manufacture of superabsorbents in high internal phase emulsions 失效
    高内相乳液中超吸收剂的制造

    公开(公告)号:US06835783B1

    公开(公告)日:2004-12-28

    申请号:US09913621

    申请日:2001-08-15

    IPC分类号: A61L1524

    CPC分类号: C08F2/32 A61L15/60 C08L33/02

    摘要: The present invention refers to a high internal phase polyclectrolyte emulsions which are useful for the manufacture of superabsorbent polymers having two phases: i) a continuous oil phase and the ii) a dispersed aqueous phase containing the aqueous monomer solution prior to polymerization and the polyelectrolyte in water-soluble, or water-swellable or very slightly crosslinked form after polymerization, wherein the polymerization occurs in the dispersed aqueous phase and wherein the dispersed aqueous phase contains a high concentration of polyclectrolyte. The present invention also refers to a process for preparing such emulsions and for inverting these emulsions so as to form films or other patterns of the superabsorbent polymer. Absorbent structures containing SAP films or other patterns prepared by the present invention are also contemplated.

    摘要翻译: 本发明涉及一种高内相聚电解质乳液,其可用于制造具有两相的超吸收聚合物:i)连续油相和ii)在聚合之前含有单体水溶液的分散水相和聚合电解质 水溶性或水溶胀性或非常轻微交联的形式,其中聚合发生在分散的水相中,并且其中分散的水相含有高浓度的聚电解质。 本发明还涉及一种制备这种乳液并反转这些乳液以形成超吸收性聚合物的膜或其它图案的方法。 也考虑了含有SAP薄膜或本发明制备的其它图案的吸收结构。

    Process for preparing chlorohydrins
    9.
    发明授权
    Process for preparing chlorohydrins 失效
    氯氢化物的制备方法

    公开(公告)号:US6051742A

    公开(公告)日:2000-04-18

    申请号:US211284

    申请日:1998-12-14

    CPC分类号: C07C29/66

    摘要: A process for hypochlorinating unsaturated alpha-olefins to produce chlorohydrins which comprises forming a microemulsion of water and an unsaturated alpha-olefin and then adding an oxidant to the microemulsion under conditions sufficient to form the chlorohydrins. The microemulsion is formed by adding a non-nucleophilic surfactant and, optionally, a co-surfactant, to the mixture of water and unsaturated alpha-olefin.

    摘要翻译: 一种用于低级不饱和α-烯烃以生产氯代醇的方法,其包括形成水和不饱和α-烯烃的微乳液,然后在足以形成氯代醇的条件下向微乳液中加入氧化剂。 通过向水和不饱和α-烯烃的混合物中加入非亲核表面活性剂和任选的助表面活性剂形成微乳液。