Method for fault identification in a plasma process
    1.
    发明授权
    Method for fault identification in a plasma process 有权
    等离子体工艺中故障识别方法

    公开(公告)号:US06441620B1

    公开(公告)日:2002-08-27

    申请号:US09650277

    申请日:2000-08-29

    IPC分类号: G01N2766

    摘要: A method of fault identification in a plasma process powered by an RF source comprises initially determining, in respect of a given baseline plasma process, the changes in magnitude of a plurality of Fourier components of the RF source resulting from changes in a plurality of the process input parameters from their baseline values. These magnitude changes are stored as reference data. During a subsequent production run, the plasma process is monitored for faults and if one is found the baseline process is repeated with input parameter values nominally the same as the original baseline values. The changes in the Fourier components from the original baseline values are determined and compared with the reference data to determine which input parameter(s) have changed.

    摘要翻译: 由RF源供电的等离子体处理中的故障识别方法包括:根据给定基准等离子体处理,首先确定由多个过程中的变化导致的RF源的多个傅立叶分量的幅度变化 从其基准值输入参数。 这些幅度变化被存储为参考数据。 在随后的生产运行期间,监测等离子体过程的故障,如果发现了等离子体过程,则使用与原始基准值相同的输入参数值重复基线过程。 确定来自原始基准值的傅立叶分量的变化并与参考数据进行比较以确定哪些输入参数已经改变。

    Method and system for detecting electrical arcing in a plasma process powered by an AC source
    2.
    发明申请
    Method and system for detecting electrical arcing in a plasma process powered by an AC source 审中-公开
    用于检测由AC电源供电的等离子体工艺中的电弧的方法和系统

    公开(公告)号:US20050212450A1

    公开(公告)日:2005-09-29

    申请号:US11048083

    申请日:2005-02-01

    摘要: A method for detecting electrical arcing in a plasma process powered by an AC source comprises the steps of sampling at least one Fourier component of the AC source waveform distorted by the non-linear response of the plasma, determining when a change in amplitude of the component, irrespective of the direction of the change, exceeds any one of a plurality of different threshold levels, and determining the duration that each such threshold is exceeded. Each threshold is a predetermined fraction of a running average of the amplitude of the component.

    摘要翻译: 用于检测由AC电源供电的等离子体工艺中的电弧的方法包括以下步骤:对由等离子体的非线性响应失真的AC源波形的至少一个傅立叶分量进行采样,确定组件的振幅变化 ,而不管变化的方向如何,超过多个不同阈值水平中的任何一个,并且确定超过每个这样的阈值的持续时间。 每个阈值是组件幅度的运行平均值的预定分数。

    Plasma chamber conditioning
    3.
    发明授权
    Plasma chamber conditioning 有权
    等离子室调节

    公开(公告)号:US06656848B1

    公开(公告)日:2003-12-02

    申请号:US10133931

    申请日:2002-04-26

    IPC分类号: H01L21302

    摘要: A method for determining the optimum number of conditioning wafers to be run following a wet clean of the walls of an RF plasma chamber 1 is based on an electrical precursor signal. Polymer build up on a plasma chamber wall during normal chamber conditioning is monitored by observing components of the fundamental RF signal. After a pre-determined number of wafers has been run, a predictive model is used to determine the total number of wafers needed to complete the conditioning cycle.

    摘要翻译: 用于确定在RF等离子体室1的壁的湿清洁之后待运行的调理晶片的最佳数量的方法基于电前驱体信号。 通过观察基本RF信号的分量来监测正常室调节期间在等离子体室壁上积聚的聚合物。 在预定数量的晶片已经运行之后,使用预测模型来确定完成调节周期所需的晶片总数。

    Endpoint detection in the etching of dielectric layers
    4.
    发明授权
    Endpoint detection in the etching of dielectric layers 有权
    电介质层蚀刻中的端点检测

    公开(公告)号:US06677246B2

    公开(公告)日:2004-01-13

    申请号:US10021324

    申请日:2001-12-06

    IPC分类号: H01L21302

    CPC分类号: H01L21/31116 H01L21/76802

    摘要: In a method of manufacturing a miniature multilayer device 10 a low open area dielectric layer 18 is selectively etched through to an underlying conductive region 16 using an electrically conducting medium such as a plasma 24. The endpoint of the etch process is determined by detecting the abrupt change in capacitance across the device 10 just as the final portion of the dielectric layer is removed.

    摘要翻译: 在制造微型多层器件10的方法中,使用诸如等离子体24的导电介质,选择性地将低开放电介质层18蚀刻到下面的导电区域16上。蚀刻工艺的终点是通过检测突变 正如电介质层的最后部分被去除一样,跨越器件10的电容的变化。

    In-tank water conditioner valve
    5.
    发明授权
    In-tank water conditioner valve 有权
    罐内水调节阀

    公开(公告)号:US06644349B2

    公开(公告)日:2003-11-11

    申请号:US09945066

    申请日:2001-08-31

    IPC分类号: F16K1107

    摘要: A water conditioner valve configured for use with a tank in a water conditioning system, including a main housing a working portion disposed within the main housing and further including at least one valve chamber, and at least a portion of the working portion is mounted within the tank.

    摘要翻译: 一种水调节阀,其构造成与水调节系统中的罐一起使用,包括主壳体,设置在主壳体内的工作部分,并且还包括至少一个阀室,并且至少一部分工作部分安装在 坦克。

    Method for process control of semiconductor manufacturing equipment
    6.
    发明授权
    Method for process control of semiconductor manufacturing equipment 有权
    半导体制造设备的过程控制方法

    公开(公告)号:US07062411B2

    公开(公告)日:2006-06-13

    申请号:US10791132

    申请日:2004-03-02

    IPC分类号: G06F15/00

    摘要: A method of fault identification on a semiconductor manufacturing tool includes monitoring tool sensor output, establishing a fingerprint of tool states based on the plurality of sensors outputs, capturing sensor data indicative of fault conditions, building a library of such fault fingerprints, comparing present tool fingerprint with fault fingerprints to identify a fault condition and estimating the effect of such a fault condition on process output. The fault library is constructed by inducing faults in a systematic way or by adding fingerprints of known faults after they occur.

    摘要翻译: 半导体制造工具的故障识别方法包括监测工具传感器输出,基于多个传感器输出建立工具状态指纹,捕获指示故障状况的传感器数据,构建这种故障指纹库,比较当前工具指纹 具有故障指纹以识别故障状况并估计这种故障状态对过程输出的影响。 故障库是通过系统方式引发故障或通过在已知故障发生后添加指纹来构建的。

    Fault classification in a plasma process chamber
    7.
    发明授权
    Fault classification in a plasma process chamber 失效
    等离子体处理室中的故障分类

    公开(公告)号:US06826489B2

    公开(公告)日:2004-11-30

    申请号:US10076803

    申请日:2002-02-14

    IPC分类号: G01B700

    CPC分类号: H01J37/32935 G05B23/0281

    摘要: A method of fault classification in a plasma process chamber powered by an RF source includes initially running a plurality of different baseline plasma processes on the chamber. For each baseline process, the magnitudes of a plurality of Fourier components of delivered RF power are determined and stored as an impedance fingerprint for that baseline process. In the case of a fault, one or more of the baseline processes is repeated according to a predetermined decision tree to determine the current fingerprints and classify the fault by comparing the current fingerprints with the original fingerprints.

    摘要翻译: 由RF源供电的等离子体处理室中的故障分类方法包括最初在腔室上运行多个不同的基线等离子体处理。 对于每个基线过程,确定所递送RF功率的多个傅立叶分量的幅度并将其存储为该基线处理的阻抗指纹。 在故障的情况下,根据预定决策树重复一个或多个基线过程,以确定当前指纹并通过将当前指纹与原始指纹进行比较来对故障进行分类。

    Plasma chamber cleaning
    8.
    发明授权
    Plasma chamber cleaning 失效
    等离子室清洗

    公开(公告)号:US06855209B2

    公开(公告)日:2005-02-15

    申请号:US10133081

    申请日:2002-04-26

    IPC分类号: H01J37/32 B08B7/04

    摘要: A method for determining optimum plasma chamber cleaning cycles based on an electrical precursor signal. Polymer build up on the interior wall of plasma chamber 1 during normal production runs is monitored by observing the phase of the fundamental RF signal on a pre-selected baseline process. At a predetermined level of this signal, the chamber processing is stopped and the chamber walls are cleaned.

    摘要翻译: 一种基于电前驱体信号确定最佳等离子体室清洁循环的方法。 通过在预先选择的基准过程上观察基本RF信号的相位来监测在正常生产运行期间在等离子体室1的内壁上积聚的聚合物。 在该信号的预定水平下,停止室处理并清洁室壁。

    Method for fault detection in a plasma process
    9.
    发明授权
    Method for fault detection in a plasma process 有权
    等离子体过程中故障检测方法

    公开(公告)号:US06781383B2

    公开(公告)日:2004-08-24

    申请号:US10295350

    申请日:2002-11-15

    IPC分类号: G01N2762

    CPC分类号: H01J37/32082 H01J37/32935

    摘要: A method of fault detection is described for use in a plasma process chamber powered by an RF source and subject to periodic standard preventive maintenance. Prior to a production run, the changes in magnitude of a plurality of Fourier components of the RF source resulting from known changes in a plurality of process conditions are determined and a single parameter which is a linear combination of a selected subset of said components is constructed. The construction is such that the combination is relatively sensitive to pre-selected process changes and relatively insensitive to said standard preventive maintenance. Then, during the production run, the single parameter is monitored to determine if there is a fault in the plasma process.

    摘要翻译: 描述了一种用于由RF源供电并经过周期性标准预防性维护的等离子体处理室中的故障检测方法。 在生产运行之前,确定由多个处理条件中的已知变化产生的RF源的多个傅立叶分量的幅度变化,并且构成作为所述分量的选定子集的线性组合的单个参数 。 这种结构使得组合对预先选择的过程变化相对敏感,并且对所述标准预防性维护相对不敏感。 然后,在生产运行期间,监视单个参数以确定等离子体过程中是否存在故障。