公开(公告)号：US20070012559A1

公开(公告)日：2007-01-18

申请号：US11247438

申请日：2005-10-11

申请人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

发明人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

IPC分类号： C23C14/32

CPC分类号： C23C14/35 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3438

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。

公开(公告)号：US20070048992A1

公开(公告)日：2007-03-01

申请号：US11213662

申请日：2005-08-26

申请人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Le ,  John White

发明人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Le ,  John White

IPC分类号： H01L21/44

CPC分类号： H01L21/67201 ,  C23C14/566 ,  C23C14/568 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67196 ,  H01L29/66765

摘要： A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.

摘要翻译： 提供了一种制造包含一个或多个含金属层的膜堆叠的方法和用于在基板上形成膜堆叠的基板处理系统。 衬底处理系统包括耦合到至少一个负载锁定室的至少一个传送室，被配置成将第一材料层沉积在衬底上的至少一个第一物理气相沉积（PVD）室和至少一个第二PVD室 在相同的基板处理系统内在第一材料层上沉积第二材料层而不破坏真空或将基板从基板处理系统取出以防止表面污染，氧化等。基板处理系统被配置为提供 高产量和紧凑的占地面积，用于在指定的PVD室中不同材料层的原位溅射。

公开(公告)号：US20070012663A1

公开(公告)日：2007-01-18

申请号：US11247705

申请日：2005-10-11

申请人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

发明人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

IPC分类号： B23K9/02

CPC分类号： H01L21/68742 ,  H01J37/3408 ,  H01J37/3438 ,  H01J37/3447

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。

公开(公告)号：US20070084720A1

公开(公告)日：2007-04-19

申请号：US11610772

申请日：2006-12-14

申请人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

发明人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

IPC分类号： C23C14/00

CPC分类号： H01J37/3408 ,  H01J37/3438

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。

公开(公告)号：US20070012558A1

公开(公告)日：2007-01-18

申请号：US11182034

申请日：2005-07-13

申请人： John White ,  Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa

发明人： John White ,  Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/35 ,  H01J37/3438 ,  H01L21/68742

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more adjustable anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the one or more adjustable anode assemblies are adapted to exchange deposited on anode surfaces with new, un-deposited on, anode surfaces without breaking vacuum. In another aspect, a shadow frame that has a path to ground is adapted to contact a deposited layer on the surface of a substrate during deposition to increase the anode area and thus deposition uniformity.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个可调阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，一个或多个可调节阳极组件适于在不破坏真空的情况下交换沉积在阳极表面上的新的未沉积的阳极表面。 在另一方面，具有到地的路径的阴影框架适于在沉积期间接触衬底的表面上的沉积层以增加阳极区域并因此沉积均匀性。

公开(公告)号：US20070056850A1

公开(公告)日：2007-03-15

申请号：US11225922

申请日：2005-09-13

申请人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hienminh Le

发明人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hienminh Le

IPC分类号： C23C14/00

CPC分类号： C23C14/352 ,  C23C14/3407

摘要： The present invention generally provides an apparatus for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately biasable sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone target assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, the processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.

摘要翻译： 本发明总体上提供了一种用于处理物理气相沉积（PVD）室中的衬底的表面的设备，其具有具有可分离的偏压部分，区域或区域以提高沉积均匀性的溅射靶。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，通过使用一个或多个DC或RF电源将多区域目标组件的每个目标区段偏置在不同的阴极偏压。 在一个方面，通过使用一个电源和一个或多个电阻，电容和/或电感元件，多区域目标组件的每个目标部分被偏置在不同的阴极偏压。 在一个方面，处理室包含一个多区域目标组件，其具有适于将处理气体输送到PVD室的处理区域的一个或多个端口。 在一个方面，处理室包含一个多区域目标组件，其具有邻近一个或多个目标区段定位的一个或多个磁控管组件。

公开(公告)号：US20070056843A1

公开(公告)日：2007-03-15

申请号：US11225923

申请日：2005-09-13

申请人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hienminh Le

发明人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hienminh Le

IPC分类号： C23C14/32

CPC分类号： C23C14/3407 ,  C23C14/352

摘要： The present invention generally provides a method for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately biasable sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone target assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, the processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.

摘要翻译： 本发明通常提供了一种用于处理物理气相沉积（PVD）室中的衬底的表面的方法，所述物理气相沉积（PVD）室具有分离的偏压部分，区域或区域以提高沉积均匀性的溅射靶。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，通过使用一个或多个DC或RF电源将多区域目标组件的每个目标区段偏置在不同的阴极偏压。 在一个方面，通过使用一个电源和一个或多个电阻，电容和/或电感元件，多区域目标组件的每个目标部分被偏置在不同的阴极偏压。 在一个方面，处理室包含一个多区域目标组件，其具有适于将处理气体输送到PVD室的处理区域的一个或多个端口。 在一个方面，处理室包含一个多区域目标组件，其具有邻近一个或多个目标区段定位的一个或多个磁控管组件。

公开(公告)号：US20060266643A1

公开(公告)日：2006-11-30

申请号：US11224221

申请日：2005-09-12

申请人： Hienminh Le ,  Akihiro Hosokawa

发明人： Hienminh Le ,  Akihiro Hosokawa

IPC分类号： C23C14/00

CPC分类号： C23C14/3407

摘要： Embodiments of the present invention generally relate to sputtering targets used in semiconductor manufacturing. In particular, the invention relates to bonding the sputtering target to a backing plate that supports the sputtering target in a deposition chamber. In one embodiment, a method of bonding at least one sputtering target tile to a backing plate comprises providing an elastomeric adhesive layer between the at least one sputtering target tile and the backing plate, and providing at least one metal mesh within the elastomeric adhesive layer, wherein at least a portion of the at least one metal mesh contacts both the at least one sputtering target tile and the backing plate, and the at least a portion of the at least one metal mesh is made of metal wire with diameter greater than 0.5 mm.

公开(公告)号：US20060289291A1

公开(公告)日：2006-12-28

申请号：US11167520

申请日：2005-06-27

申请人： Hienminh Le ,  Akihiro Hosokawa

发明人： Hienminh Le ,  Akihiro Hosokawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/35 ,  H01J37/3408

摘要： A physical vapor deposition chamber, which includes a sputtering target, a magnetron disposed on a back side of the sputtering target, a metal sheet disposed between at least a portion of the magnetron and the sputtering target to reduce the effect of the magnetic strength of the portion of the magnetron on the sputtering target and a substrate support for holding a substrate.

摘要翻译： 包括溅射靶的物理气相沉积室，设置在溅射靶的背面的磁控管，设置在磁控管的至少一部分与溅射靶之间的金属片，以减小对溅射靶的磁强度的影响 溅射靶上的磁控管的一部分和用于保持基板的基板支撑体。

公开(公告)号：US20070046927A1

公开(公告)日：2007-03-01

申请号：US11216801

申请日：2005-08-31

申请人： Hienminh Le ,  Akihiro Hosokawa

发明人： Hienminh Le ,  Akihiro Hosokawa

IPC分类号： G01N21/88 ,  G01B11/28

CPC分类号： H01L21/67207 ,  C23C14/54 ,  C23C14/568 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67253 ,  H01L21/67288

摘要： Embodiments of an apparatus and method of monitoring and controlling a large area substrate processing chamber are provided. Multiple types of metrology tools can be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. Several number of a particular type of metrology tools can also be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. The metrology tools can be installed in a metrology chamber, a process chamber, a transfer chamber, or a loadlock.

摘要翻译： 提供了一种监视和控制大面积衬底处理室的装置和方法的实施例。 可以在基板处理系统中安装多种计量工具，以在处理室中的基板处理之后测量膜性质。 也可以在基板处理系统中安装若干数量的特定类型的计量工具，以在处理室中的基板处理之后测量膜性质。 计量工具可以安装在计量室，处理室，转移室或装载锁中。