公开(公告)号：US20070012559A1

公开(公告)日：2007-01-18

申请号：US11247438

申请日：2005-10-11

申请人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

发明人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

IPC分类号： C23C14/32

CPC分类号： C23C14/35 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3438

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。

公开(公告)号：US20070048992A1

公开(公告)日：2007-03-01

申请号：US11213662

申请日：2005-08-26

申请人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Le ,  John White

发明人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Le ,  John White

IPC分类号： H01L21/44

CPC分类号： H01L21/67201 ,  C23C14/566 ,  C23C14/568 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67196 ,  H01L29/66765

摘要： A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.

摘要翻译： 提供了一种制造包含一个或多个含金属层的膜堆叠的方法和用于在基板上形成膜堆叠的基板处理系统。 衬底处理系统包括耦合到至少一个负载锁定室的至少一个传送室，被配置成将第一材料层沉积在衬底上的至少一个第一物理气相沉积（PVD）室和至少一个第二PVD室 在相同的基板处理系统内在第一材料层上沉积第二材料层而不破坏真空或将基板从基板处理系统取出以防止表面污染，氧化等。基板处理系统被配置为提供 高产量和紧凑的占地面积，用于在指定的PVD室中不同材料层的原位溅射。

公开(公告)号：US20070012663A1

公开(公告)日：2007-01-18

申请号：US11247705

申请日：2005-10-11

申请人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

发明人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

IPC分类号： B23K9/02

CPC分类号： H01L21/68742 ,  H01J37/3408 ,  H01J37/3438 ,  H01J37/3447

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。

公开(公告)号：US20070084720A1

公开(公告)日：2007-04-19

申请号：US11610772

申请日：2006-12-14

申请人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

发明人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

IPC分类号： C23C14/00

CPC分类号： H01J37/3408 ,  H01J37/3438

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。

公开(公告)号：US20070012558A1

公开(公告)日：2007-01-18

申请号：US11182034

申请日：2005-07-13

申请人： John White ,  Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa

发明人： John White ,  Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/35 ,  H01J37/3438 ,  H01L21/68742

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more adjustable anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the one or more adjustable anode assemblies are adapted to exchange deposited on anode surfaces with new, un-deposited on, anode surfaces without breaking vacuum. In another aspect, a shadow frame that has a path to ground is adapted to contact a deposited layer on the surface of a substrate during deposition to increase the anode area and thus deposition uniformity.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个可调阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，一个或多个可调节阳极组件适于在不破坏真空的情况下交换沉积在阳极表面上的新的未沉积的阳极表面。 在另一方面，具有到地的路径的阴影框架适于在沉积期间接触衬底的表面上的沉积层以增加阳极区域并因此沉积均匀性。

公开(公告)号：US20070151841A1

公开(公告)日：2007-07-05

申请号：US11601576

申请日：2006-11-17

申请人： Makoto Inagawa ,  Akihiro Hosokawa ,  Hien-Minh Le ,  Ilya Lavitsky ,  John White ,  Todd Martin ,  Bradley Stimson

发明人： Makoto Inagawa ,  Akihiro Hosokawa ,  Hien-Minh Le ,  Ilya Lavitsky ,  John White ,  Todd Martin ,  Bradley Stimson

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/3455

摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. In another embodiment, the target and magnetron are divided into respective strips separated by other structure. Each magnetron strip is supported partially from above from a common scanning plate and partially on a respective target strip. A centering mechanism may align the different magnetron strips.

摘要翻译： 一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在靶上的多个位置处从其下方部分地支撑，在其上滑动或滚动。 在一个实施例中，轭板是连续且均匀的。 在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。 在另一个实施例中，靶和磁控管被分成由其它结构分开的相应条。 每个磁控管从上面部分地从普通扫描板支撑并部分地支撑在相应的目标条上。 定心机构可以对准不同的磁控管条。

公开(公告)号：US20070193881A1

公开(公告)日：2007-08-23

申请号：US11347667

申请日：2006-02-03

申请人： Makoto Inagawa ,  Akihiro Hosokawa ,  John White

发明人： Makoto Inagawa ,  Akihiro Hosokawa ,  John White

IPC分类号： C23C14/00

CPC分类号： H01J37/3408 ,  H01J37/3435 ,  H01J37/3455

摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. The yokes separated by a gap sufficiently small that the two yokes are magnetically coupled. Each yoke has its own set of spring supports from above and rolling/sliding supports from below to allow the magnetron shape to conform to that of the target. Alternatively, narrow slots are formed in a unitary yoke.

摘要翻译： 一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在其上滑动或滚动的靶上的多个位置处从下方部分支撑。 在一个实施例中，轭板是连续且均匀的。 在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。 磁轭分开足够小的间隙，使得两个磁轭磁耦合。 每个轭具有其自己的一组弹簧支撑件，从上方起滚动/滑动支撑件，从而允许磁控管形状与靶材的形状一致。 或者，窄槽形成为单一轭。

公开(公告)号：US08961756B2

公开(公告)日：2015-02-24

申请号：US11780757

申请日：2007-07-20

申请人： Makoto Inagawa ,  Hien Minh Huu Le ,  Akihiro Hosokawa ,  Bradley O. Stimson ,  John M. White

发明人： Makoto Inagawa ,  Hien Minh Huu Le ,  Akihiro Hosokawa ,  Bradley O. Stimson ,  John M. White

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.

摘要翻译： 磁控管组件包括一个或多个磁控管，每个磁控管在靶的溅射面上形成封闭的等离子体环。 目标可以包括多个条带目标，相应的带状磁控管在其上滚动并且通过弹簧机构部分地支撑在公共支撑板上。 带状磁控管可以是两级折叠​​磁控管，其中每个磁控管形成在条带靶的侧面之间延伸的折叠等离子体环，并且其端部在目标的中间相遇。 形成磁控管的磁体可以布置成具有通过弯曲部分连接的具有大致均匀的直线部分的图案，其中在角附近提供额外的磁体位置以引导等离子体轨道。 多个可能是柔性的磁控管可以弹性地支撑在扫描的支撑板上，并且单独部分地由一个或多个靶的背面上的辊支撑。

公开(公告)号：US20120175250A1

公开(公告)日：2012-07-12

申请号：US13420996

申请日：2012-03-15

申请人： Yoshiaki Tanase ,  Makoto Inagawa ,  Akihiro Hosokawa

发明人： Yoshiaki Tanase ,  Makoto Inagawa ,  Akihiro Hosokawa

IPC分类号： C23C14/34 ,  B23P11/00

CPC分类号： C23C14/3407 ,  H01J37/3408 ,  H01J37/3497 ,  Y10T29/49826

摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.

摘要翻译： 特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型面板等离子体溅射反应器的溅射靶组件。 目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。 孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。 四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。

公开(公告)号：US07429718B2

公开(公告)日：2008-09-30

申请号：US11213348

申请日：2005-08-24

申请人： Makoto Inagawa ,  Akihiro Hosokawa

发明人： Makoto Inagawa ,  Akihiro Hosokawa

IPC分类号： H05B3/68 ,  C23C16/00

CPC分类号： H01L21/67109

摘要： A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

摘要翻译： 提供了用于控制处理室内的衬底的温度的衬底支撑组件和方法。 衬底支撑组件包括导热体，其包括不锈钢材料，在导热体表面上的衬底支撑表面，并且适于在其上支撑大面积衬底，一个或多个嵌入导热体内的加热元件， 位于所述导热体下方的冷却板，包括位于所述冷却板下方并适于结构地支撑所述导热体的不锈钢材料的基座支撑结构，以及适于由所述基座支撑结构支撑的一个或多个冷却通道，以及 位于冷却板和基座支撑结构之间。 还提供了包括本发明的基板支撑组件的处理室。