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公开(公告)号：US5891543A
公开(公告)日：1999-04-06
申请号：US703828
申请日：1996-08-27
申请人： Jon Alfred Casey , Cynthia Jeane Calli , Darren T. Cook , David B. Goland , John Ulrich Knickerbocker , Mark Joseph LaPlante , David Clifford Long , Daniel Scott Mackin , Kathleen Mary McGuire , Keith Colin O'Neil , Kevin Michael Prettyman , Michael Thomas Puchalski , Joseph Christopher Saltarelli , Candace Anne Sullivan
发明人： Jon Alfred Casey , Cynthia Jeane Calli , Darren T. Cook , David B. Goland , John Ulrich Knickerbocker , Mark Joseph LaPlante , David Clifford Long , Daniel Scott Mackin , Kathleen Mary McGuire , Keith Colin O'Neil , Kevin Michael Prettyman , Michael Thomas Puchalski , Joseph Christopher Saltarelli , Candace Anne Sullivan
IPC分类号： H01L21/48 , H01L21/683 , H05K1/03 , H05K3/40 , B32B3/02
CPC分类号： H05K3/4061 , H01L21/4867 , H01L21/6833 , H05K1/0306 , H05K2203/105 , Y10T156/1056 , Y10T156/1158 , Y10T29/49126 , Y10T29/49128 , Y10T29/49139 , Y10T428/239 , Y10T428/31 , Y10T428/31786
摘要： The present invention relates generally to a new apparatus and method for screening using electrostatic adhesion. More particularly, the invention encompasses an apparatus that uses an electrostatic charge during the screening process for a semiconductor substrate. Basically, a backing layer is adhered to a green ceramic sheet using an electrostatic charge, while the green ceramic sheet is processed.
摘要翻译： 本发明一般涉及使用静电粘附进行筛选的新装置和方法。 更具体地，本发明包括在半导体衬底的筛选过程中使用静电电荷的装置。 基本上，使用静电荷将背衬层附着在生坯陶瓷片上，同时处理生坯陶瓷片。
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2.发明授权Apparatus and method for screening green sheet with via hole using porous backing material 失效使用多孔背衬材料筛选具有通孔的生片的装置和方法
公开(公告)号：US5759669A
公开(公告)日：1998-06-02
申请号：US577179
申请日：1995-12-22
申请人： Jon Alfred Casey , Cynthia Jeane Calli , Darren T. Cook , David B. Goland , John Ulrich Knickerbocker , Mark Joseph LaPlante , David Clifford Long , Daniel Scott Mackin , Kathleen Mary McGuire , Keith Colin O'Neil , Kevin Michael Prettyman , Michael Thomas Puchalski , Joseph Christopher Saltarelli , Candace Anne Sullivan
发明人： Jon Alfred Casey , Cynthia Jeane Calli , Darren T. Cook , David B. Goland , John Ulrich Knickerbocker , Mark Joseph LaPlante , David Clifford Long , Daniel Scott Mackin , Kathleen Mary McGuire , Keith Colin O'Neil , Kevin Michael Prettyman , Michael Thomas Puchalski , Joseph Christopher Saltarelli , Candace Anne Sullivan
CPC分类号： B32B15/02 , B32B3/08 , B32B3/26 , H05K3/4061 , H05K1/0306 , H05K2203/0156 , H05K2203/082 , Y10S428/901 , Y10T29/49163 , Y10T428/24273 , Y10T428/24322 , Y10T428/24331 , Y10T428/24339 , Y10T428/24802
摘要： The present invention relates generally to a new apparatus and method for screening using porous backing material. More particularly, the invention encompasses an apparatus that uses a porous backing material which is adhered to a green sheet during the screening process. Basically, a backing layer having a very high porosity is adhered to a green sheet, while the green sheet is screened. During the drying process of the green sheet some of the screening fluids are absorbed by the porous backing layer, which allows the screened vias of the green sheet to have a smooth surface.
摘要翻译： 本发明一般涉及使用多孔背衬材料进行筛选的新装置和方法。 更具体地说，本发明包括使用在筛选过程中粘附到生片上的多孔背衬材料的装置。 基本上，具有非常高的孔隙率的背衬层粘附到生片上，同时筛分生片。 在生片的干燥过程中，一些筛选液被多孔背衬层吸收，这允许生片的筛选通孔具有光滑的表面。
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3.发明授权CVD of metals capable of receiving nickel or alloys thereof using inert contact 失效能够使用惰性接触来接收镍的金属或其合金的CVD公开(公告)号：US06569496B1
公开(公告)日：2003-05-27
申请号：US09050491
申请日：1998-03-30
IPC分类号： C23C1608
CPC分类号： H01L21/28556 , C23C16/14 , C23C16/44
摘要： The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.
摘要翻译： 本发明公开了一种CVD（化学气相沉积）方法，其中镍或其合金，例如Ni / Cu，Ni / Co沉积在能够使用碘化物源，能够接收镍或其合金的金属表面上，优选地 碘化物盐，例如碘化铵或碘化铜，至少有一个与接收金属表面接触的惰性隔离物。 本发明基本上允许镍（Ni）在钼（Mo）或钨（W）上的CVD，其中镍源与耐火金属表面物理隔离）使用至少一种与耐火材料浮动接触的惰性材料进行电镀 需要涂覆至少一层镍或其合金的金属表面。
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4.发明授权CVD of metals capable of receiving nickel or alloys thereof using inert contact 失效能够使用惰性接触来接收镍的金属或其合金的CVD公开(公告)号：US06224682B1
公开(公告)日：2001-05-01
申请号：US09489976
申请日：2000-01-21
IPC分类号： C23C1600
CPC分类号： H01L21/28556 , C23C16/14 , C23C16/44
摘要： The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.
摘要翻译： 本发明公开了一种CVD（化学气相沉积）方法，其中镍或其合金，例如Ni / Cu，Ni / Co沉积在能够使用碘化物源，能够接收镍或其合金的金属表面上，优选地 碘化物盐，例如碘化铵或碘化铜，至少有一个与接收金属表面接触的惰性隔离物。 本发明基本上允许镍（Ni）在钼（Mo）或钨（W）上的CVD，其中镍源与耐火金属表面物理隔离）使用至少一种与耐火材料浮动接触的惰性材料进行电镀 需要涂覆至少一层镍或其合金的金属表面。
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