公开(公告)号：US06658088B2

公开(公告)日：2003-12-02

申请号：US09792072

申请日：2001-02-26

Applicant: Jonas Tiren

Inventor： Jonas Tiren

IPC: H01J3500

CPC classification number: A61N5/1001 ,  H01J35/32 ,  H01J2201/304 ,  H01J2235/164

Abstract: A miniature X-ray source includes a support structure provided with a through hole, an anode arranged at one end of the hole and a cathode at the other end of the hole, thereby defining a cavity, wherein the anode and cathode are adapted to be energized to generate X-ray radiation. The support structure has a cross-sectional shape that is determined such that a desired radiation distribution of the radiation generated by the X-ray source is achieved. Also a method of manufacturing miniature X-ray sources is disclosed.

Abstract translation: 微型X射线源包括设置有通孔的支撑结构，布置在孔的一端的阳极和在孔的另一端的阴极，从而限定空腔，其中阳极和阴极适于 通电以产生X射线辐射。 支撑结构具有被确定为使得由X射线源产生的辐射的期望的辐射分布被实现的横截面形状。 还公开了一种制造微型X射线源的方法。

公开(公告)号：US4895500A

公开(公告)日：1990-01-23

申请号：US334578

申请日：1989-04-07

Applicant: Bertil Hok ,  Lars Tenerz ,  Jonas Tiren

Inventor： Bertil Hok ,  Lars Tenerz ,  Jonas Tiren

IPC: F04B43/04 ,  F15C5/00 ,  F16K99/00

CPC classification number: F16K99/0001 ,  F04B43/043 ,  F15C5/00 ,  F16K99/0007 ,  F16K99/0057 ,  F16K2099/0074 ,  F16K2099/0084 ,  F16K2099/0088 ,  F16K2099/0092 ,  F16K2099/0094 ,  F16K99/0034 ,  Y10T137/7843 ,  Y10T137/7891

Abstract: A silicon micromechanical non-reverse valve. In a main surface of a silicon wafer there is provided a cavity and a cantilever beam. The beam extends over the cavity and is integrally formed with the wafer at its top portion. The beam is provided at a distance above the bottom wall of the cavity. A second wafer of silicon or glass is provided over the first silicon wafer and covers the cavity in order to form a chamber. A second wafer is provided with two openings one of which is situated within the outline of the beam and the other of which is situated outside said outline. The first opening acts as an inlet and the second opening as an outlet for the valve.

Abstract translation: 硅微机械非反向阀。 在硅晶片的主表面中设置有空腔和悬臂梁。 光束在空腔上延伸并且在其顶部与晶片一体地形成。 梁设置在空腔底壁一定距离处。 硅或玻璃的第二晶圆被提供在第一硅晶片上并且覆盖空腔以便形成腔室。 第二晶片设置有两个开口，其中一个开口位于梁的轮廓内，另一个位于所述轮廓外。 第一开口用作入口，第二开口用作阀的出口。

公开(公告)号：US06514192B2

公开(公告)日：2003-02-04

申请号：US09783219

申请日：2001-02-15

Applicant: Jonas Tiren

Inventor： Jonas Tiren

IPC: A61N500

CPC classification number: A61N5/1001 ,  H01J35/32 ,  H01J2235/062

Abstract: Medical system comprising an X-ray tube unit catheter 302 and an X-ray tube unit including a miniaturised X-ray tube 301, wherein the X-ray tube unit is adapted to be inserted into the X-ray tube unit catheter in order to generate X-ray radiation at a treatment position in a vessel within a human or animal body.The X-ray tube is provided with a distal electrical pole and a proximal electrical pole. The proximal pole is connected via an insulated electrical conductor 305 to an external power source. The distal pole is connectable to a conducting means 304 at the inner surface of the catheter wall via distal connecting means 303. The conducting means has a predetermined length extending in the longitudinal direction of the catheter and is connected via an insulated electrical conductor to the external power source. During treatment the X-ray tube unit is adapted to be moved in relation to the X-ray tube unit catheter, wherein the distal pole is electrically connected to the conducting means.

Abstract translation: 医疗系统包括X射线管单元导管302和包括小型化X射线管301的X射线管单元，其中X射线管单元适于插入X射线管单元导管，以便 在人或动物体内的血管的处理位置产生X射线辐射.X射线管设置有远端电极和近端电极。 近端极通过绝缘电导体305连接到外部电源。 远侧极可以通过远端连接装置303在导管壁的内表面处连接到导电装置304.导电装置具有在导管的纵向方向上延伸的预定长度，并且经由绝缘电导体连接到外部 能量源。 在治疗期间，X射线管单元适于相对于X射线管单元导管移动，其中远极与导电装置电连接。

公开(公告)号：US06522203B1

公开(公告)日：2003-02-18

申请号：US09671831

申请日：2000-09-27

Applicant: Jonas Tiren ,  Jesper Engvall

Inventor： Jonas Tiren ,  Jesper Engvall

IPC: H03F368

CPC classification number: H03F1/523 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/0692 ,  H03F3/195 ,  H03F3/604

Abstract: In an output stage of an electronic signal processing circuit such as that used for transmission from a mobile telephone set the amplifier circuit comprises two power transistors (A, B) or type FET. The power transistors are used for amplifying different signals such as signals for different wavelength bands in a duel band telephone set and they are not used simultaneously. Each power transistor comprises a multitude of elementary transistors (19, 21) or “fingers” which are interdigitated to form an interleaved configuration, the element transistors of one transistor alternating with the element transistors of the other transistor. Thereby the effective area which can receive heat dissipated by the element transistors will be twice that used when the element transistors are located in two geometrically separated groups which will allow a higher power load on each transistor element.

Abstract translation: 在诸如用于从移动电话机传输的电子信号处理电路的输出级中，放大器电路包括两个功率晶体管（A，B）或类型的FET。 功率晶体管用于放大不同信号，例如在对讲机电话机中用于不同波段的信号，并且它们不被同时使用。 每个功率晶体管包括多个基本晶体管（19,21）或“指”，它们被交叉以形成交错配置，一个晶体管的元件晶体管与另一个晶体管的元件晶体管交替。 因此，可以接收由元件晶体管消散的热的有效面积将是当元件晶体管位于两个几何分离的组中时使用的两倍，这将允许每个晶体管元件上的更高的功率负载。

公开(公告)号：US06275566B1

公开(公告)日：2001-08-14

申请号：US09557402

申请日：2000-04-24

Applicant: Leif Smith ,  Lars Tenerz ,  Jonas Tiren ,  Pelle Rangsten

Inventor： Leif Smith ,  Lars Tenerz ,  Jonas Tiren ,  Pelle Rangsten

IPC: H01J3500

CPC classification number: A61N5/1001 ,  H01J35/32 ,  H01J2235/0233

Abstract: A method and a system for x-ray treatment of, for example, cancer or restenosis prevention inside a living body is disclosed. A miniature x-ray tube (1) is provided with at least one pair of electrodes (6, 8), the electrodes alternatingly serving as anode and cathode, respectively. A power supply (13) is connected to the electrodes, and a switching unit of the power supply alternates the electrical potential across the electrodes. With the x-ray tube according to the invention the temperature increase at the site of treatment is limited, thereby providing an effective treatment without unduly prolonged treatment duration.

Abstract translation: 公开了一种在生物体内进行例如癌症或再狭窄预防的X射线治疗的方法和系统。 微型x射线管（1）设置有至少一对电极（6,8），电极分别交替地用作阳极和阴极。 电源（13）连接到电极，电源的开关单元交替跨越电极的电位。 对于根据本发明的X射线管，处理部位的温度升高是有限的，从而提供有效的治疗，而不会不适当地延长治疗持续时间。

公开(公告)号：US06561966B1

公开(公告)日：2003-05-13

申请号：US09680512

申请日：2000-10-06

Applicant: Leif Smith ,  Lars Tenerz ,  Jonas Tiren

Inventor： Leif Smith ,  Lars Tenerz ,  Jonas Tiren

IPC: A61N500

CPC classification number: A61N5/1001 ,  A61N5/1007 ,  A61N2005/1008 ,  H01J35/08 ,  H01J35/32 ,  H01J2201/304 ,  H01J2235/087

Abstract: The invention relates to an apparatus for the controlled delivery of ionizing radiation to a therapy location. It comprises a source (4) of ionizing radiation provided at the distal end of an elongated member (6). It also has a control unit (12) for controlling the movement of said radiation source (4) at the therapy location, via a driving unit (21, 22; 23, 24, 25, 26). A method according to the invention comprises controlling the radiation dose at the therapy location, by controlling the movement of the source.

Abstract translation: 本发明涉及一种用于将电离辐射控制传送到治疗位置的装置。 它包括设置在细长构件（6）的远端处的电离辐射源（4）。 它还具有控制单元（12），用于经由驱动单元（21,22; 23,24,25,26）控制在治疗位置处的所述辐射源（4）的移动。 根据本发明的方法包括通过控制源的移动来控制治疗位置处的辐射剂量。

公开(公告)号：US5519247A

公开(公告)日：1996-05-21

申请号：US313078

申请日：1994-10-25

Applicant: Richard Arbus ,  Kjell Bohlin ,  Paul Stephanson ,  Jonas Tiren

Inventor： Richard Arbus ,  Kjell Bohlin ,  Paul Stephanson ,  Jonas Tiren

IPC: H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/075 ,  H01L31/105 ,  H01L31/117

CPC classification number: H01L27/1443

Abstract: A detector circuit, for example for optical radiation, has a detector diode (20) and an amplifier circuit (30) integrated with the diode in the same silicon wafer for amplification of the diode signal. The diode is designed as a lateral diode. The diode and the amplifier circuit are both produced in a homogeneously weakly doped silicon wafer (1).

Abstract translation: PCT No.PCT / SE93 / 00278 Sec。 371日期：1994年10月25日 102（e）日期1994年10月25日PCT提交1993年4月1日PCT公布。 出版物WO93 / 20588 日期为1993年10月14日。例如用于光辐射的检测器电路具有检测器二极管（20）和与同一硅晶片中的二极管集成的用于放大二极管信号的放大器电路（30）。 二极管被设计为侧向二极管。 二极管和放大器电路均在均匀弱掺杂的硅晶片（1）中产生。