NEGATIVE ELECTRODE MATERIAL FOR A SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME
    3.
    发明申请
    NEGATIVE ELECTRODE MATERIAL FOR A SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME 审中-公开
    用于二次电池的负极电极材料及其制造方法

    公开(公告)号:US20130337335A1

    公开(公告)日:2013-12-19

    申请号:US14001436

    申请日:2011-12-15

    IPC分类号: H01M4/36 H01M4/04 H01M4/583

    摘要: The present invention relates to a negative electrode material for a secondary battery and to a method for manufacturing same. The negative electrode material includes a graphite matrix and a plurality of tin-oxide nanorods disposed on the graphite matrix. Thus, when the negative electrode material is used as the negative electrode for a secondary battery, the negative electrode material may provide high initial capacity (1010 mAhg−1) and coulombic efficiency, superior rate capability, and improved electrochemical properties. Further, the method for manufacturing the negative electrode material for a secondary battery includes: a step of activating a surface of graphite; coating tin-oxide nanoparticles onto the activated surface of the graphite so as to form tin-oxide seed-type graphite; and heating the tin-oxide seed-type graphite using heated water in order to grow a plurality of tin-oxide nanorods.

    摘要翻译: 二次电池用负极材料及其制造方法技术领域本发明涉及二次电池用负极材料及其制造方法。 负极材料包括石墨基质和设置在石墨基质上的多个氧化锡纳米棒。 因此,当负极材料用作二次电池的负极时,负极材料可以提供高的初始容量(1010mAhg-1)和库仑效率,优异的速率能力和改善的电化学性能。 此外,二次电池用负极材料的制造方法包括:活化石墨表面的工序; 将氧化锡纳米颗粒涂覆到石墨的活化表面上,形成锡氧化物种子型石墨; 并使用加热的水加热氧化锡籽型石墨,以生长多个氧化锡纳米棒。

    METHOD AND APPARATUS FOR DEPOSITING COPPER WIRING
    6.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITING COPPER WIRING 审中-公开
    用于沉积铜线的方法和装置

    公开(公告)号:US20070155166A1

    公开(公告)日:2007-07-05

    申请号:US11559630

    申请日:2006-11-14

    申请人: Jong-Guk Kim

    发明人: Jong-Guk Kim

    IPC分类号: H01L21/4763

    CPC分类号: H01L21/76814 H01L21/02063

    摘要: A method of depositing copper wiring that includes at least one of the following. Transporting a semiconductor substrate with a damascene pattern into a first chamber. Substantially concurrently performing a degassing process and a process of removing a Copper Oxide film on a semiconductor substrate located in a first chamber.

    摘要翻译: 一种沉积铜线的方法,其包括以下中的至少一个。 将具有镶嵌图案的半导体衬底传送到第一室中。 基本上同时进行脱气处理和在位于第一室中的半导体衬底上去除氧化铜膜的工艺。