Three Dimensional Inductor, Transformer and Radio Frequency Amplifier
    1.
    发明申请
    Three Dimensional Inductor, Transformer and Radio Frequency Amplifier 有权
    三维电感,变压器和射频放大器

    公开(公告)号:US20120056680A1

    公开(公告)日:2012-03-08

    申请号:US13294351

    申请日:2011-11-11

    IPC分类号: H03F3/16

    摘要: A three dimensional on-chip radio frequency amplifier is disclosed that includes first and second transformers and a first transistor. The first transformer includes first and second inductively coupled inductors. The second transformer includes third and fourth inductively coupled inductors. Each inductor includes multiple first segments in a first metal layer; multiple second segments in a second metal layer; first and second inputs, and multiple through vias coupling the first and second segments to form a continuous path between the first and second inputs. The first input of the first inductor is coupled to an amplifier input; the first input of the second inductor is coupled to the first transistor gate; the first input of the third inductor is coupled to the first transistor drain, the first input of the fourth inductor is coupled to an amplifier output. The second inductor inputs and the first transistor source are coupled to ground.

    摘要翻译: 公开了一种三维片上射频放大器,其包括第一和第二变压器和第一晶体管。 第一变压器包括第一和第二电感耦合电感器。 第二变压器包括第三和第四电感耦合电感器。 每个电感器包括在第一金属层中的多个第一段; 第二金属层中的多个第二段; 第一和第二输入以及耦合第一和第二段的多通孔,以形成第一和第二输入之间的连续路径。 第一电感器的第一输入耦合到放大器输入端; 第二电感器的第一输入耦合到第一晶体管栅极; 第三电感器的第一输入耦合到第一晶体管漏极,第四电感器的第一输入耦合到放大器输出端。 第二电感器输入和第一晶体管源耦合到地。

    Three dimensional inductor, transformer and radio frequency amplifier
    2.
    发明授权
    Three dimensional inductor, transformer and radio frequency amplifier 有权
    三维电感,变压器和射频放大器

    公开(公告)号:US08508301B2

    公开(公告)日:2013-08-13

    申请号:US13294351

    申请日:2011-11-11

    IPC分类号: H03F3/14

    摘要: A three dimensional on-chip radio frequency amplifier is disclosed that includes first and second transformers and a first transistor. The first transformer includes first and second inductively coupled inductors. The second transformer includes third and fourth inductively coupled inductors. Each inductor includes multiple first segments in a first metal layer; multiple second segments in a second metal layer; first and second inputs, and multiple through vias coupling the first and second segments to form a continuous path between the first and second inputs. The first input of the first inductor is coupled to an amplifier input; the first input of the second inductor is coupled to the first transistor gate; the first input of the third inductor is coupled to the first transistor drain, the first input of the fourth inductor is coupled to an amplifier output. The second inductor inputs and the first transistor source are coupled to ground.

    摘要翻译: 公开了一种三维片上射频放大器,其包括第一和第二变压器和第一晶体管。 第一变压器包括第一和第二电感耦合电感器。 第二变压器包括第三和第四电感耦合电感器。 每个电感器包括在第一金属层中的多个第一段; 第二金属层中的多个第二段; 第一和第二输入以及耦合第一和第二段的多通孔,以形成第一和第二输入之间的连续路径。 第一电感器的第一输入耦合到放大器输入端; 第二电感器的第一输入耦合到第一晶体管栅极; 第三电感器的第一输入耦合到第一晶体管漏极,第四电感器的第一输入耦合到放大器输出端。 第二电感器输入和第一晶体管源耦合到地。

    Three Dimensional Inductor and Transformer
    3.
    发明申请
    Three Dimensional Inductor and Transformer 有权
    三维电感和变压器

    公开(公告)号:US20110084765A1

    公开(公告)日:2011-04-14

    申请号:US12576033

    申请日:2009-10-08

    IPC分类号: H03F3/16 H01F5/00

    摘要: A three dimensional on-chip inductor, transformer and radio frequency amplifier are disclosed. The radio frequency amplifier includes a pair of transformers and a transistor. The transformers include at least two inductively coupled inductors. The inductors include a plurality of segments of a first metal layer, a plurality of segments of a second metal layer, a first inductor input, a second inductor input, and a plurality of through silicon vias coupling the plurality of segments of the first metal layer and the plurality of segments of the second metal layer to form a continuous, non-intersecting path between the first inductor input and the second inductor input. The inductors can have a symmetric or asymmetric geometry. The first metal layer can be a metal layer in the back-end-of-line section of the chip. The second metal layer can be located in the redistributed design layer of the chip.

    摘要翻译: 公开了三维片上电感器,变压器和射频放大器。 射频放大器包括一对变压器和晶体管。 变压器包括至少两个电感耦合电感器。 电感器包括第一金属层的多个段,第二金属层的多个段,第一电感器输入端,第二电感器输入端和耦合第一金属层的多个段的多个穿通硅通孔 以及第二金属层的多个段,以在第一电感器输入端和第二电感器输入端之间形成连续的,不相交的路径。 电感器可以具有对称或不对称的几何形状。 第一金属层可以是芯片的后端部分中的金属层。 第二金属层可以位于芯片的再分布设计层中。

    Three dimensional inductor and transformer
    4.
    发明授权
    Three dimensional inductor and transformer 有权
    三维电感和变压器

    公开(公告)号:US08143952B2

    公开(公告)日:2012-03-27

    申请号:US12576033

    申请日:2009-10-08

    IPC分类号: H03F3/14

    摘要: A three dimensional on-chip inductor, transformer and radio frequency amplifier are disclosed. The radio frequency amplifier includes a pair of transformers and a transistor. The transformers include at least two inductively coupled inductors. The inductors include a plurality of segments of a first metal layer, a plurality of segments of a second metal layer, a first inductor input, a second inductor input, and a plurality of through silicon vias coupling the plurality of segments of the first metal layer and the plurality of segments of the second metal layer to form a continuous, non-intersecting path between the first inductor input and the second inductor input. The inductors can have a symmetric or asymmetric geometry. The first metal layer can be a metal layer in the back-end-of-line section of the chip. The second metal layer can be located in the redistributed design layer of the chip.

    摘要翻译: 公开了三维片上电感器,变压器和射频放大器。 射频放大器包括一对变压器和晶体管。 变压器包括至少两个电感耦合电感器。 电感器包括第一金属层的多个段,第二金属层的多个段,第一电感器输入端,第二电感器输入端和耦合第一金属层的多个段的多个穿通硅通孔 以及第二金属层的多个段,以在第一电感器输入端和第二电感器输入端之间形成连续的,不相交的路径。 电感器可以具有对称或不对称的几何形状。 第一金属层可以是芯片的后端部分中的金属层。 第二金属层可以位于芯片的再分布设计层中。