摘要:
The present invention relates to a method for forming a graphene protective film having gas and moisture barrier properties, to a graphene protective film formed by the method, and to the use thereof. A single-layer or multilayer graphene protective film can be used as a material for a barrier coating or bags, and improves the gas and moisture barrier properties of a variety of devices in a wide array of industrial fields to thereby maintain the electrical characteristics of devices over a long period of time.
摘要:
A touch sensor capable of specifying a touch position and/or a degree of a touch pressure by using graphene as an electrode and/or a strain gauge, and more particular, a touch sensor capable of simultaneously detecting a pressure and a position by means of change in resistance by using graphene is provided.
摘要:
The present disclosure relates to a manufacturing method of a graphene fiber, a graphene fiber manufactured by the same method, and use thereof. The graphene fiber formed by using graphenes of linear pattern can be applied to various fields such as an electric wire and coaxial cable.
摘要:
A touch sensor capable of specifying a touch position and/or a degree of a touch pressure by using graphene as an electrode and/or a strain gauge, and more particular, a touch sensor capable of simultaneously detecting a pressure and a position by means of change in resistance by using graphene is provided.
摘要:
The present disclosure relates to a graphene roll-to-roll transfer method, a graphene roll-to-roll transfer apparatus, a graphene roll manufactured by the graphene roll-to-roll transfer method, and uses thereof.
摘要:
The present disclosure relates to a graphene roll-to-roll transfer method, a graphene roll-to-roll transfer apparatus, a graphene roll manufactured by the graphene roll-to-roll transfer method, and uses thereof.
摘要:
The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
摘要:
The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).