公开(公告)号：US20050133809A1

公开(公告)日：2005-06-23

申请号：US11011154

申请日：2004-12-15

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L23/48

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US07417264B2

公开(公告)日：2008-08-26

申请号：US11011154

申请日：2004-12-15

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US20080105890A1

公开(公告)日：2008-05-08

申请号：US12000870

申请日：2007-12-18

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  June-o Song

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  June-o Song

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/183

摘要： Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.

摘要翻译： 提供反射电极和化合物半导体发光器件，例如包括其的LED或LD。 形成在p型化合物半导体层上的反射电极包括：与p型化合物半导体层形成欧姆接触的第一电极层; 设置在第一电极层上并由透明导电氧化物形成的第二电极层; 以及设置在第二电极层上并由光学反射材料形成的第三电极层。

公开(公告)号：US07960746B2

公开(公告)日：2011-06-14

申请号：US10979240

申请日：2004-11-03

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L23/48 ,  H01L23/52 ,  H01L23/40 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

摘要翻译： 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US20050212006A1

公开(公告)日：2005-09-29

申请号：US10978426

申请日：2004-11-02

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/28 ,  H01L33/32 ,  H01L33/42 ,  H01L29/15

CPC分类号： H01L33/32 ,  H01L33/40

摘要： Provided are a GaN-based III-V group compound semiconductor light emitting device and a method of fabricating the GaN-based III-V group compound semiconductor light emitting device. The GaN-based III-V group compound semiconductor light emitting device includes: at least an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer, which are disposed between an n-type electrode and a p-type electrode. The p-type electrode includes a first electrode layer which is formed of Ag or an Ag-alloy on the p-type GaN-based compound semiconductor layer and a second electrode which is formed of at least one selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer.

摘要翻译： 提供了一种基于GaN的III-V族化合物半导体发光器件和制造GaN基III-V族化合物半导体发光器件的方法。 GaN基III-V族化合物半导体发光器件包括：至少n型化合物半导体层，有源层和p型化合物半导体层，其设置在n型电极和p型 型电极。 p型电极包括由p型GaN基化合物半导体层上的Ag或Ag合金形成的第一电极层和由选自Ni， Ni合金，Zn，Zn合金，Cu，Cu合金，Ru，Ir和Rh。

公开(公告)号：US20050087758A1

公开(公告)日：2005-04-28

申请号：US10953282

申请日：2004-09-30

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Ok-hyun Nam ,  June-o Song ,  Dong-seok Leem

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Ok-hyun Nam ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32

摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.

摘要翻译： 提供了使用该p型电极和III-V族GaN基化合物半导体器件。 电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层 ，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

公开(公告)号：US20110198652A1

公开(公告)日：2011-08-18

申请号：US13095487

申请日：2011-04-27

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC分类号： H01L33/60 ,  B82Y99/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

摘要翻译： 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US07666693B2

公开(公告)日：2010-02-23

申请号：US12180312

申请日：2008-07-25

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US20080299687A1

公开(公告)日：2008-12-04

申请号：US12180312

申请日：2008-07-25

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US20050167681A1

公开(公告)日：2005-08-04

申请号：US10978811

申请日：2004-11-02

申请人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

发明人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01S5/323 ,  H01L29/15

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

摘要： Provided are an electrode layer, a light emitting device including the electrode layer, and a method of forming the electrode layer. The electrode layer includes a first electrode layer and a second electrode layer, which are sequentially stacked, and the first electrode layer is formed of indium oxide added by an additive element. Also, the additive element includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.

摘要翻译： 提供电极层，包括电极层的发光器件和形成电极层的方法。 电极层包括依次堆叠的第一电极层和第二电极层，第一电极层由添加元素添加的氧化铟形成。 此外，添加元素包括选自Mg，Ag，Zn，Sc，Hf，Zr，Te，Se，Ta，W，Nb，Cu，Si，Ni，Co，Mo，Cr，Mn中的至少一种 ，Hg，Pr和La。