公开(公告)号：US07285857B2

公开(公告)日：2007-10-23

申请号：US10953282

申请日：2004-09-30

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Ok-hyun Nam ,  June-o Song ,  Dong-seok Leem

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Ok-hyun Nam ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L29/45 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32

摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.

摘要翻译： 提供了使用该p型电极和III-V族GaN基化合物半导体器件。 电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层 ，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

公开(公告)号：US20050167681A1

公开(公告)日：2005-08-04

申请号：US10978811

申请日：2004-11-02

申请人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

发明人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01S5/323 ,  H01L29/15

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

摘要： Provided are an electrode layer, a light emitting device including the electrode layer, and a method of forming the electrode layer. The electrode layer includes a first electrode layer and a second electrode layer, which are sequentially stacked, and the first electrode layer is formed of indium oxide added by an additive element. Also, the additive element includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.

摘要翻译： 提供电极层，包括电极层的发光器件和形成电极层的方法。 电极层包括依次堆叠的第一电极层和第二电极层，第一电极层由添加元素添加的氧化铟形成。 此外，添加元素包括选自Mg，Ag，Zn，Sc，Hf，Zr，Te，Se，Ta，W，Nb，Cu，Si，Ni，Co，Mo，Cr，Mn中的至少一种 ，Hg，Pr和La。

公开(公告)号：US20050087758A1

公开(公告)日：2005-04-28

申请号：US10953282

申请日：2004-09-30

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Ok-hyun Nam ,  June-o Song ,  Dong-seok Leem

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Ok-hyun Nam ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32

摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.

摘要翻译： 提供了使用该p型电极和III-V族GaN基化合物半导体器件。 电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层 ，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

公开(公告)号：US20050006653A1

公开(公告)日：2005-01-13

申请号：US10878351

申请日：2004-06-29

申请人： Joon-seop Kwak ,  Ok-hyun Nam

发明人： Joon-seop Kwak ,  Ok-hyun Nam

IPC分类号： H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01L29/04 ,  H01L21/4763

CPC分类号： H01L33/42 ,  H01L29/452 ,  H01L33/32

摘要： Provided is an electrode layer for a light generating device, and a method of forming the same and a light generating device including the same. The electrode layer contains a solid solution of an oxide which contains a lanthanide and a metal element. The electrode layer may further contain at least one selected from the group consisting of gold (Au), gold-lanthanum (AuLa) compound and lanthanum-gallium (LaGa) compound.

摘要翻译： 本发明提供一种发光装置用电极层及其制造方法以及包括该发光装置的发光装置。 电极层包含含有镧系元素和金属元素的氧化物的固溶体。 电极层可以进一步含有选自金（Au），金 - 镧（AuLa）化合物和镧镓（LaGa）化合物中的至少一种。

公开(公告)号：US20070284530A1

公开(公告)日：2007-12-13

申请号：US11798562

申请日：2007-05-15

申请人： Joong-kon Son ,  Seoung-jae Im ,  Ok-hyun Nam

发明人： Joong-kon Son ,  Seoung-jae Im ,  Ok-hyun Nam

IPC分类号： G01T1/00

CPC分类号： H04N9/3129

摘要： Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.

摘要翻译： 提供了一种激光显示装置。 激光显示装置可以包括被配置为发射至少一个激光束的至少一个光源，被配置为用至少一个激光束执行扫描的至少一个扫描单元，以及被配置为产生激发光和散射的图像形成单元 通过从扫描单元接收至少一个激光束来形成图像。

公开(公告)号：US20070237200A1

公开(公告)日：2007-10-11

申请号：US11513053

申请日：2006-08-31

申请人： Han-youl Ryu ,  Ok-hyun Nam ,  Kyoung-ho Ha

发明人： Han-youl Ryu ,  Ok-hyun Nam ,  Kyoung-ho Ha

IPC分类号： H01S5/00

CPC分类号： H01S5/405 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34333

摘要： A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.

摘要翻译： 提供半导体激光二极管阵列。 半导体激光二极管阵列包括：具有双结构的下半导体激光二极管芯片，包括下基板，设置在下基板上的第一激光产生区域和设置在下基板上并与第一激光器分离的第二激光产生区域 生成区域 具有双重结构的上半导体激光二极管芯片，包括上基板，设置在上基板上的第三激光产生区域和设置在上基板上并与第三激光产生区域分离的第四激光发生区域; 以及将第一至第四激光产生区域电连接到外部的电极单元。 第一和第二激光产生区域分别垂直地结合到第三和第四激光产生区域，使得发射激光束的第一至第四激光产生区域中的第一至第四发光点被布置成两个 维度时尚。

公开(公告)号：US07616674B2

公开(公告)日：2009-11-10

申请号：US11513053

申请日：2006-08-31

申请人： Han-youl Ryu ,  Ok-hyun Nam ,  Kyoung-ho Ha

发明人： Han-youl Ryu ,  Ok-hyun Nam ,  Kyoung-ho Ha

IPC分类号： H01S5/40

CPC分类号： H01S5/405 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34333

摘要： A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.

摘要翻译： 提供半导体激光二极管阵列。 半导体激光二极管阵列包括：具有双结构的下半导体激光二极管芯片，包括下基板，设置在下基板上的第一激光产生区域和设置在下基板上并与第一激光器分离的第二激光产生区域 生成区域 具有双重结构的上半导体激光二极管芯片，包括上基板，设置在上基板上的第三激光产生区域和设置在上基板上并与第三激光产生区域分离的第四激光发生区域; 以及将第一至第四激光产生区域电连接到外部的电极单元。 第一和第二激光产生区域分别垂直地结合到第三和第四激光产生区域，使得发射激光束的第一至第四激光产生区域中的第一至第四发光点被布置成两个 维度时尚。

公开(公告)号：US06744064B2

公开(公告)日：2004-06-01

申请号：US09776846

申请日：2001-02-06

申请人： Sung-nam Lee ,  Yong-jo Park ,  Ok-hyun Nam ,  In-hwan Lee ,  Won-seok Lee ,  Shi-yun Cho ,  Cheol-soo Sone

发明人： Sung-nam Lee ,  Yong-jo Park ,  Ok-hyun Nam ,  In-hwan Lee ,  Won-seok Lee ,  Shi-yun Cho ,  Cheol-soo Sone

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/3403 ,  H01S5/34333

摘要： A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

摘要翻译： 提供一种半导体发光器件，其包括用于通过使用GaN在半导体发光器件中注入多个载流子而减少应变和载流子溢出的装置。 半导体发光器件包括通过将AlGaN / GaN双层沉积预定次数形成的多量子势垒，或通过在有源层的上侧或下侧形成的应变补偿多量子势垒，通过沉积AlGaN / InGaN双层预定次数，不需要p型覆层。

公开(公告)号：US06500747B1

公开(公告)日：2002-12-31

申请号：US09682746

申请日：2001-10-12

申请人： Won-seok Lee ,  Ok-hyun Nam ,  Cheol-soo Sone

发明人： Won-seok Lee ,  Ok-hyun Nam ,  Cheol-soo Sone

IPC分类号： H01L2128

CPC分类号： H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  Y10S438/974

摘要： A method of manufacturing a semiconductor substrate is provided. The method includes a first step of forming a rugged portion in a GaN substrate, and a second step of forming a GaN thin film on the GaN substrate at a lateral growth rate fast enough to cover the GaN thin film vertically grown with the GaN thin film laterally grown, so that the rugged portion is covered with the GaN thin film.

摘要翻译： 提供一种制造半导体衬底的方法。 该方法包括在GaN衬底中形成粗糙部分的第一步骤，以及在GaN衬底上以足以覆盖与GaN薄膜垂直生长的GaN薄膜的横向生长速率形成GaN薄膜的第二步骤 横向生长，使得粗糙部分被GaN薄膜覆盖。

公开(公告)号：US08262227B2

公开(公告)日：2012-09-11

申请号：US13064413

申请日：2011-03-23

申请人： Joong-kon Son ,  Seoung-jae Im ,  Ok-hyun Nam

发明人： Joong-kon Son ,  Seoung-jae Im ,  Ok-hyun Nam

IPC分类号： G03B21/00

CPC分类号： H04N9/3129

摘要： Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.

摘要翻译： 提供了一种激光显示装置。 激光显示装置可以包括被配置为发射至少一个激光束的至少一个光源，被配置为用至少一个激光束执行扫描的至少一个扫描单元，以及被配置为产生激发光和散射的图像形成单元 通过从扫描单元接收至少一个激光束来形成图像。