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1.发明授权Field effect-controllable power semiconductor component with temperature sensor 失效具有温度传感器的场效应可控功率半导体元件
公开(公告)号：US5828263A
公开(公告)日：1998-10-27
申请号：US770874
申请日：1996-12-20
CPC分类号： G01K7/01
摘要： A temperature sensor contains a bipolar transistor adjacent a cell array of a power MOSFET or IGBT. In order to detect temperature independently of a voltage drop across the power semiconductor component, a zone of the same conduction type is disposed between the cell array and a base zone. That zone is connected to a fixed bias voltage.
摘要翻译： 温度传感器包含与功率MOSFET或IGBT的单元阵列相邻的双极晶体管。 为了独立于功率半导体部件上的电压降来检测温度，相同导电类型的区域设置在电池阵列和基极区域之间。 该区域连接到固定的偏置电压。
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2.发明授权Integrated comparator circuit with four MOSFETS of defined transfer characteristics 失效集成比较器电路，具有四个具有定义传输特性的MOSFET
公开(公告)号：US6057712A
公开(公告)日：2000-05-02
申请号：US330341
申请日：1994-10-27
IPC分类号： G01R19/165 , H03K5/08 , H03K17/30 , H03K5/22
CPC分类号： H03K17/302
摘要： An integrated comparator includes an inverter with a first depletion FET and a first enhancement FET, and a series circuit with a second depletion FET and a second enhancement FET. The second depletion and enhancement FETs are connected in series between a first supply voltage terminal and a first input terminal. A node between the second enhancement and depletion FETs is connected to the gate terminal of the first enhancement FET. The transfer characteristic curve of the second enhancement FET is steeper than the transfer characteristic curve of the first enhancement FET. All of the MOSFETs are of the same channel type. The voltage to be compared is connected between the second enhancement FET and ground. The switching point is determined by the transfer characteristics of the two enhancement FETs.
摘要翻译： 集成比较器包括具有第一耗尽FET和第一增强FET的反相器，以及具有第二耗尽FET和第二增强FET的串联电路。 第二耗尽增强FET串联连接在第一电源电压端子和第一输入端子之间。 第二增强型FET与耗尽型FET之间的节点与第一增强型FET的栅极端子连接。 第二增强FET的传输特性曲线比第一增强FET的传输特性曲线更陡。 所有的MOSFET都是相同的通道类型。 要比较的电压连接在第二增强FET和地之间。 开关点由两个增强型FET的传输特性决定。
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公开(公告)号：US5731721A
公开(公告)日：1998-03-24
申请号：US699233
申请日：1996-08-19
CPC分类号： H03K17/302
摘要： A comparator circuit includes a series circuit having a first MOSFET and a second MOSFET. An inverter has a third MOSFET and a fourth MOSFET. A node between the first and second MOSFETs is connected to a gate terminal of the fourth MOSFET. An input voltage is applied between ground and the second MOSFET. A series circuit of a fifth MOSFET and a Zener diode polarized in the blocking direction is connected parallel to the fourth MOSFET. A response threshold of the comparator circuit is defined by adjusting a resistance of the Zener diode occurring in the reverse direction. The resistance is adjusted through the use of a voltage pulse that can be applied to a terminal connected to a cathode of the Zener diode.
摘要翻译： 比较器电路包括具有第一MOSFET和第二MOSFET的串联电路。 逆变器具有第三MOSFET和第四MOSFET。 第一和第二MOSFET之间的节点连接到第四MOSFET的栅极端子。 在地和第二个MOSFET之间施加一个输入电压。 在阻挡方向上极化的第五个MOSFET和齐纳二极管的串联电路与第四个MOSFET并联连接。 比较器电路的响应阈值通过调节在相反方向上发生的齐纳二极管的电阻来定义。 通过使用可以施加到连接到齐纳二极管的阴极的端子的电压脉冲来调节电阻。
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4.发明授权Circuit configuration for monitoring the temperature of a power semiconductor component 失效用于监测功率半导体元件的温度的电路配置
公开(公告)号：US5703521A
公开(公告)日：1997-12-30
申请号：US625634
申请日：1996-03-29
IPC分类号： G01K7/01 , H01L21/822 , H01L27/04 , H01L35/00 , H03K5/153
CPC分类号： G01K7/01
摘要： The temperature of a power semiconductor component is monitored by feeding the block current of a bipolar transistor which is in thermal contact with the component to an amplifying current mirror. The output signal of the current mirror is compared with a reference current. If the mirrored current is greater than the reference current, then the system produces a corresponding output. Temperatures of the power semiconductor component below 140.degree. C. can be reliably detected.
摘要翻译： 通过将与元件热接触的双极晶体管的块电流馈送到放大电流镜来监测功率半导体元件的温度。 将电流镜的输出信号与参考电流进行比较。 如果镜像电流大于参考电流，则系统产生相应的输出。 可以可靠地检测低于140℃的功率半导体组件的温度。
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公开(公告)号：US06269014B1
公开(公告)日：2001-07-31
申请号：US09627180
申请日：2000-07-27
IPC分类号： H02M75387
CPC分类号： H02M7/538 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/48257 , H01L2224/4903 , H01L2924/00014 , H01L2924/1306 , H01L2924/13091 , H01L2924/3011 , H02M7/003 , H02P7/04 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： In order to supply a load, e.g. an electric motor, with current bidirectionally, an H bridge configuration containing four switching transistors is used. In order to attain outstanding electrical conductivity and also thermal conductivity, a half-bridge configuration containing two transistors of opposite conductivity types is constructed. Each of the transistors is realized on a chip, the rear sides of which chips are seated on a common conductive support preferably produced from metal. Each housing is equipped with a support of this type. The rear side of each of the two chips is formed from a drain or source electrode of the transistors. A load can be connected to the support. Two half-bridge configurations can advantageously be combined to form an H bridge configuration.
摘要翻译： 为了提供负载，例如 使用具有双向电流的电动机，包含四个开关晶体管的H桥配置。 为了获得优异的导电性和导热性，构造了包含两个相反导电类型的晶体管的半桥配置。 每个晶体管都实现在芯片上，其芯片的后侧位于通常由金属制成的导电支撑件上。 每个房屋都配有这种类型的支撑。 两个芯片中的每一个的后侧由晶体管的漏极或源极形成。 负载可以连接到支持。 两个半桥配置可以有利地组合以形成H桥配置。
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公开(公告)号：US5072143A
公开(公告)日：1991-12-10
申请号：US550460
申请日：1990-07-10
CPC分类号： H03K17/79 , H03K17/136
摘要： A thyristor is controlled by a phototransistor whose photo current is reduced by a MOSFET if the thyristor voltage surpasses a prescribed value. The MOSFET is controlled by two current supplies. The first current supply is connected between a gate terminal and a connecting terminal of the thyristor. The second current supply is connected between the gate and source of the MOSFET. The maximum current capacity of the first current supply is greater than the maximum current capacity of the second current supply.
摘要翻译： 如果晶闸管电压超过规定值，则晶体管由光电晶体管控制，其光电流由MOSFET减少。 MOSFET由两个电流源控制。 第一电流源连接在晶闸管的栅极端子和连接端子之间。 第二个电流源连接在MOSFET的栅极和源极之间。 第一电流源的最大电流容量大于第二电流源的最大电流容量。
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公开(公告)号：US06404041B1
公开(公告)日：2002-06-11
申请号：US09420461
申请日：1999-10-18
IPC分类号： H01L23495
CPC分类号： H01L23/49562 , H01L23/481 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： The power switch has considerably reduced common-mode interference and relatively reduced circuit complexity. The power switch is formed of a semiconductor chip on a leadframe. A first terminal of the semiconductor chip is connected to the active potential and a second terminal for inactive potential is connected to the leadframe. The second terminal is either the drain of a transistor or the anode of a diode.
摘要翻译： 电源开关具有显着降低的共模干扰和相对降低的电路复杂度。 电源开关由引线框架上的半导体芯片形成。 半导体芯片的第一端子连接到有源电位，并且用于无效电位的第二端子连接到引线框架。 第二端子是晶体管的漏极或二极管的阳极。
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公开(公告)号：US06304422B1
公开(公告)日：2001-10-16
申请号：US09694571
申请日：2000-10-23
IPC分类号： H02H318
CPC分类号： H02H11/003 , Y10T307/839
摘要： The polarity reversal protection circuit provides for a semiconductor switch (11) to be connected in parallel with the polarity reversal protection diode (10), which switch is switched off in the event of polarity reversal and is switched on during normal operation.
摘要翻译： 极性反转保护电路提供与极性反转保护二极管（10）并联连接的半导体开关（11），该极性反转保护二极管（10）在极性反转的情况下被切断并且在正常操作期间被接通。
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9.发明授权Integrated power semiconductor component having a substrate with a protective structure in the substrate 失效集成功率半导体元件，其具有在基板中具有保护结构的基板
公开(公告)号：US5726478A
公开(公告)日：1998-03-10
申请号：US769348
申请日：1996-12-19
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/088 , H01L23/62
CPC分类号： H01L27/0251 , H01L2924/0002
摘要： An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.
摘要翻译： 集成功率半导体元件包括第一导电类型的衬底。 至少一个第二导电类型的第一区域被嵌入衬底中，并且第二导电类型的至少一个第二区域被嵌入衬底中。 基板触点提供电源电压。 接触半导体部件嵌入在第一区域和第二区域中。 第一区域中的半导体部件的至少一部分控制第二区域中的至少一部分半导体部件。 第二导电类型的第三区域设置在第一区域和第二区域之间，并且第一区域和第三区域处于不同的电位。
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10.发明授权Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS 失效用于MOSFET和IGBTS的过压保护的半导体元件布置
公开(公告)号：US5633515A
公开(公告)日：1997-05-27
申请号：US398126
申请日：1995-03-03
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/739 , H01L29/78 , H01C27/02
CPC分类号： H01L27/0255 , H01L29/7395 , H01L2924/0002
摘要： MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.
摘要翻译： 提供了通过插在漏极或集电极端子和栅极端子之间的限制二极管来防止过压的MOSFET和IGBT元件。 提供连接到具有限制二极管的元件的续流二极管，其击穿电压低于续流二极管的击穿电压一定的量。 这种过电压保护可以通过将限制二极管集成到续流二极管的半导体本体中并通过限制二极管的阳极区的相应布置以简单的方式实现。
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