公开(公告)号：US06779481B2

公开(公告)日：2004-08-24

申请号：US09789575

申请日：2001-02-22

申请人： Martin A. Kent ,  Abron Toure ,  Stephen N. Golovato

发明人： Martin A. Kent ,  Abron Toure ,  Stephen N. Golovato

IPC分类号： C23C16509

CPC分类号： H01J37/32431 ,  A61K2039/55555 ,  C23C16/4401 ,  C23C16/509 ,  G01N33/5432

摘要： An electrical coupling is provided between chamber parts of electronic device processing equipment (e.g., equipment used for processing semiconductor wafers) to reduce differences in the electrical potential between such parts. The coupling prevents or at least reduces the presence of plasma or excited gases in undesired regions of the process chamber. In illustrated embodiments, the coupling extends from a cover of a vertically movable electrode assembly to the liner of the chamber wall. Although these parts are each respectively coupled to ground, it is believed that differences in the ground path impedances result in these parts having different electrical potentials, and the potential differences can cause plasma or excited gases to be present in undesirable regions of the chamber. These electrical potential differences are suppressed by electrically coupling the parts to thereby prevent or reduce the presence of plasma or excited gases in undesired regions of the chamber. Although in the illustrated embodiments the cover of the electrode assembly is coupled to the chamber liner, the coupling could be utilized to suppress potential differences between other chamber parts.

摘要翻译： 在电子设备处理设备的室部件（例如，用于处理半导体晶片的设备）之间提供电耦合，以减少这些部件之间的电位差。 联接器防止或至少减少处理室的不期望区域中的等离子体或激发气体的存在。 在所示实施例中，联接器从可垂直移动的电极组件的盖子延伸到腔室壁的衬套。 虽然这些部件各自分别耦合到地，但是据信接地路阻抗的差异导致这些部件具有不同的电位，并且电位差可能导致等离子体或激发气体存在于腔室的不期望的区域中。 通过电连接部件来抑制这些电位差，从而防止或减少腔室不期望区域中的等离子体或激发气体的存在。 尽管在所示实施例中，电极组件的盖子耦合到腔室衬套，但是可以利用联接器来抑制其它腔室部件之间的电位差。

公开(公告)号：US06695318B2

公开(公告)日：2004-02-24

申请号：US09760853

申请日：2001-01-17

申请人： Stephen N. Golovato ,  Arthur H. Laflamme, Jr. ,  Jay R. Wallace

发明人： Stephen N. Golovato ,  Arthur H. Laflamme, Jr. ,  Jay R. Wallace

IPC分类号： F16J1502

CPC分类号： H01J37/32458 ,  H01J37/32477

摘要： An arrangement for improved thermal and/or electrical coupling between parts disposed in electronic device processing equipment is provided. In an illustrated embodiment, an improved coupling between a chamber liner and a chamber wall is provided which can be utilized in semiconductor processing equipment. The arrangement includes a compressible coupling or gasket which is compressed between a wedge ring and the chamber wall. The chamber liner is coupled to the wedge ring, so that the chamber liner is coupled to the chamber wall by way of the wedge ring and compressible coupling.

摘要翻译： 提供了一种用于改善设置在电子设备处理设备中的部件之间的热和/或电耦合的装置。 在图示的实施例中，提供了腔室衬套和室壁之间的改进的联接，其可用于半导体加工设备中。 该装置包括在楔形环和腔室壁之间被压缩的可压缩联接器或垫圈。 腔室衬套联接到楔形环，使得腔室衬套通过楔环和可压缩联接件联接到腔室壁。

公开(公告)号：US6143144A

公开(公告)日：2000-11-07

申请号：US365602

申请日：1999-07-30

申请人： Stephen N. Golovato ,  Johannes Westendorp

发明人： Stephen N. Golovato ,  Johannes Westendorp

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23C14/34

CPC分类号： H01J37/32871 ,  H01J37/321 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： The invention for etching a substrate containing an oxide layer reduces activated oxygen within the plasma and maintains a high soft etch rate in a series of subsequent etches. In one aspect of the invention, a second substrate, in the form of a substrate ring, is utilized in the processing chamber and is etched in conjunction with a first substrate being processed. This substrate ring is formed of a material which, when etched, reacts with activated oxygen to form a stable oxygen-containing compound which may be evacuated from the system. In another aspect of the invention, a first power level for inductively coupling energy to the plasma is determined to establish a bias voltage level at the substrate of approximately 100 Volts. A second, lower power level is then determined for producing a bias voltage level at the substrate not significantly higher than 300 Volts. With the range provided by the determined first and second power levels, an etching power level is selected for inductively coupling energy to the plasma in the range of the first and second power levels but closer to the second power level than the first power level to reduce oxygen activated in the plasma. The etching power level is also selected to establish an etch rate of the substrate in the range of approximately 300-500 .ANG./min. for a semiconductor oxide such as silicon dioxide, and 75-125 .ANG./min. for a metal oxide, which would be considered a soft etch.

摘要翻译： 用于蚀刻含有氧化物层的衬底的本发明减少了等离子体内的活化氧并且在一系列随后的蚀刻中保持高的软蚀刻速率。 在本发明的一个方面，在处理室中使用呈衬底环形式的第二衬底，并与待处理的第一衬底结合蚀刻。 该基材环由蚀刻后与活性氧反应形成稳定的含氧化合物的材料形成，该化合物可从体系中排出。 在本发明的另一方面，确定用于将能量感应耦合到等离子体的第一功率电平，以在基板处建立大约100伏特的偏置电压电平。 然后确定第二个较低的功率电平，以在衬底处产生不显着高于300伏特的偏置电压电平。 在由所确定的第一和第二功率电平提供的范围内，选择蚀刻功率电平用于在第一和第二功率电平的范围内感应耦合能量到等离子体，但是比第一功率电平更接近第二功率电平以减少 氧气在等离子体中活化。 还选择蚀刻功率电平以建立在约300-500安培/分钟范围内的衬底的蚀刻速率。 对于半导体氧化物如二氧化硅和75-125安培/分钟。 对于金属氧化物，其将被认为是软蚀刻。

公开(公告)号：US06173673B1

公开(公告)日：2001-01-16

申请号：US09282534

申请日：1999-03-31

申请人： Stephen N. Golovato ,  Robert W. Milgate, III ,  Paul Louis Consoli

发明人： Stephen N. Golovato ,  Robert W. Milgate, III ,  Paul Louis Consoli

IPC分类号： C23C1600

CPC分类号： H01L21/67069

摘要： A processing system for processing a substrate with a plasma comprises a processing chamber defining a process space including a support structure for supporting a substrate within the process space. A gas inlet in the chamber introduces a process gas into the chamber and a showerhead positioned within the chamber disperses process gas from the inlet. A supply of electrical energy biases the showerhead to form a plasma with process gas dispersed by the showerhead. First and second electrical insulator elements are positioned between the showerhead and the processing chamber, and are operable to electrically insulate the showerhead from the processing chamber. The first and second electrical insulator elements each have a passage therethrough for passing a process gas from the gas inlet through the insulator element and the respective passages of the insulator elements are laterally spaced from each other. A channel is formed in one of the elements and extends between the spaced passages to couple the passages together and form a complete passage through the first and second insulator elements for passing a process gas to the showerhead.

摘要翻译： 用于用等离子体处理衬底的处理系统包括限定包括用于在工艺空间内支撑衬底的支撑结构的工艺空间的处理室。 室中的气体入口将工艺气体引入室中，并且位于室内的喷头分散来自入口的工艺气体。 电能的供应会使喷头偏置以形成等离子体，其中工艺气体由喷头分散。 第一和第二电绝缘体元件位于喷头和处理室之间，并且可操作以将喷头与处理室电绝缘。 第一和第二电绝缘元件各自具有通过其的通道，用于使来自气体入口的处理气体通过绝缘体元件，并且绝缘体元件的相应通道彼此横向间隔开。 通道形成在一个元件中并且在间隔开的通道之间延伸以将通道联接在一起，并形成通过第一和第二绝缘体元件的完整通道，用于将工艺气体传递到喷头。