利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.022 秒)

    HUMIDITY SENSOR, HUMIDITY SENSING METHOD AND TRANSISTOR THEREFOR
    1.
    发明申请
    HUMIDITY SENSOR, HUMIDITY SENSING METHOD AND TRANSISTOR THEREFOR 有权
    湿度传感器，湿度传感方法和晶体管

    公开(公告)号：US20140298904A1

    公开(公告)日：2014-10-09

    申请号：US14110059

    申请日：2012-02-15

    申请人： Jun Bo Yoon ,  Hyun Ho Yang ,  Seok Ho Song

    发明人： Jun Bo Yoon ,  Hyun Ho Yang ,  Seok Ho Song

    IPC分类号： G01N27/04

    CPC分类号： G01N27/048 ,  G01N27/4141

    摘要： Disclosed is a humidity sensor including: a conductive material in which electric charges are charged; a charger which charges the electric charges in the conductive material; and a measurer which measures a change amount of the electric charges charged in the conductive material.

    摘要翻译： 公开了一种湿度传感器，包括：电荷被充电的导电材料; 对导电材料中的电荷进行充电的充电器; 以及测量器，其测量在导电材料中充电的电荷的变化量。

    Method for manufacturing a semiconductor device having a metal layer floating over a substrate
    10.
    发明授权
    Method for manufacturing a semiconductor device having a metal layer floating over a substrate 失效
    一种制造半导体器件的方法，该半导体器件具有在衬底上漂浮的金属层

    公开(公告)号：US06518165B1

    公开(公告)日：2003-02-11

    申请号：US09763401

    申请日：2001-02-22

    申请人： Jun Bo Yoon ,  Chul Hi Han ,  Eui Sik Yoon ,  Choong Ki Kim

    发明人： Jun Bo Yoon ,  Chul Hi Han ,  Eui Sik Yoon ,  Choong Ki Kim

    IPC分类号： H01L214763

    CPC分类号： H01L23/645 ,  H01L23/522 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor device where a passive element, such as, an inductor, is floating over a substrate, where an integrated circuit is formed, such that the overall area of the semiconductor device may be highly reduced. According to the present invention, a first metal layer is formed on the substrate, a first masking layer is formed on a portion of the first metal layer, a second metal layer is formed on other portion of the first metal layer on which the first masking layer is not formed, and a second masking layer is formed on the first masking layer and the second metal layer. Then, the first masking layer and a portion of the second masking layer which includes a portion which covers the first masking layer is removed, a third metal layer is formed on portions of the first and second metal layers which are exposed by the step of removing the first masking layer and the portion of the second masking layer. Finally, the second masking layer, the second metal layer; and the first metal layer except a portion which the third metal layer covers are removed. In this way, the area for integrating various passive elements can be saved and the overall area for the semiconductor device including the integrated circuit and the passive elements may be reduced.

    摘要翻译： 一种用于制造半导体器件的方法，其中诸如电感器的无源元件在其上形成集成电路的衬底上浮动，使得半导体器件的总体面积可以大大降低。 根据本发明，在基板上形成第一金属层，在第一金属层的一部分上形成第一掩模层，在第一金属层的第一掩模的另一部分上形成第二金属层 并且在第一掩模层和第二金属层上形成第二掩模层。 然后，去除第一掩蔽层和包括覆盖第一掩模层的部分的第二掩蔽层的一部分，在第一和第二金属层的暴露于通过去除的步骤的部分上形成第三金属层 第一掩蔽层和第二掩蔽层的部分。 最后，第二掩模层，第二金属层; 除去除了第三金属层覆盖的部分之外的第一金属层。 以这种方式，可以节省用于集成各种无源元件的区域，并且可以减少包括集成电路和无源元件的半导体器件的总体面积。