Patterning process and resist composition
    1.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号:US08753805B2

    公开(公告)日:2014-06-17

    申请号:US13530896

    申请日:2012-06-22

    IPC分类号: G03F7/26

    摘要: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.

    摘要翻译: 通过将抗蚀剂组合物施加到基材上,预烘烤,暴露于高能辐射,烘烤(PEB)和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含含有被酸不稳定基团,酸发生剂和有机溶剂取代的羟基的环烯烃的重复单元的聚合物的抗蚀剂组合物显示出高的溶解对比度和高耐蚀刻性。

    PATTERNING PROCESS AND RESIST COMPOSITION
    4.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20130071788A1

    公开(公告)日:2013-03-21

    申请号:US13614494

    申请日:2012-09-13

    IPC分类号: G03F7/004 G03F7/20

    摘要: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.

    摘要翻译: 通过将包含酸不稳定基取代的乙烯醇和马来酸酐和/或马来酰亚胺的重复单元和/或马来酰亚胺,酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上,预烘烤, 能量辐射,并在有机溶剂显影剂中显影,使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 在通过有机溶剂显影的正/负反转的图像形成中,抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。

    Resist composition and patterning process
    5.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号:US08313886B2

    公开(公告)日:2012-11-20

    申请号:US12761202

    申请日:2010-04-15

    摘要: An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R1 is hydrogen or methyl, R2 is alkylene or fluoroalkylene, and R3 is fluoroalkyl. The additive polymer is highly transparent to radiation with wavelength of up to 200 nm. Water repellency, water slip, acid lability, hydrolysis and other properties of the polymer may be adjusted by a choice of polymer structure.

    摘要翻译: 将包含式(1)的重复单元的添加剂聚合物加入到包含基础树脂,光致酸发生剂和有机溶剂的抗蚀剂组合物中。 R1是氢或甲基,R2是亚烷基或氟代亚烷基,R3是氟烷基。 添加剂聚合物对波长高达200nm的辐射是高度透明的。 通过选择聚合物结构可以调节聚合物的拒水性,水滑动性,酸性,水解性和其它性能。

    PATTERNING PROCESS
    8.
    发明申请
    PATTERNING PROCESS 有权
    绘图过程

    公开(公告)号:US20110177462A1

    公开(公告)日:2011-07-21

    申请号:US13010318

    申请日:2011-01-20

    IPC分类号: G03F7/20

    摘要: A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive/negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control.

    摘要翻译: 通过将包含含有任选的酸不稳定基取代的萘酚基的重复单元,酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上,烘烤以形成抗蚀剂膜,将抗蚀剂膜暴露于 高能辐射,烘烤,并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。 在通过有机溶剂显影的正/负反转的图像形成过程中,抗蚀剂膜具有高的溶解对比度和受控的酸扩散。 通过使抗蚀剂膜通过具有格子状图案和有机溶剂显影的掩模进行曝光,可以以高精度的尺寸控制形成细孔图案。