公开(公告)号：US20100097301A1

公开(公告)日：2010-04-22

申请号：US12580760

申请日：2009-10-16

申请人： Toshiharu Sumiya ,  Hisanobu Azuma ,  Jun Iba

发明人： Toshiharu Sumiya ,  Hisanobu Azuma ,  Jun Iba

IPC分类号： G09G3/28 ,  H01J7/44

CPC分类号： H01J63/06 ,  H01J1/30 ,  H01J1/316 ,  H01J17/34 ,  H01J31/127 ,  H01J61/305 ,  H01J2201/3195 ,  H01J2329/0497

摘要： A light emitting apparatus includes a plurality of light emitting devices including luminous bodies, and a plurality of resistors made of the same material having negative resistance-temperature characteristics, the plurality of resistors being connected respectively in series to the plurality of light emitting devices. When the plurality of resisters are at the same temperature, one or ones among the plurality of resistors, which exhibit higher temperatures during driving, have larger resistance values than other among the plurality of resistors, which exhibit lower temperatures during the driving.

摘要翻译： 发光装置包括多个包括发光体的发光装置和由具有负电阻温度特性的相同材料制成的多个电阻器，多个电阻器分别串联连接到多个发光器件。 当多个电阻器处于相同温度时，在驱动期间表现出更高温度的多个电阻器中的一个或多个电阻器具有比在驱动期间表现出较低温度的多个电阻器中的其它电阻器中的其他电阻值更大的电阻值。

公开(公告)号：US20100123744A1

公开(公告)日：2010-05-20

申请号：US12620346

申请日：2009-11-17

申请人： Jun Iba ,  Toshiharu Sumiya ,  Hisanobu Azuma

发明人： Jun Iba ,  Toshiharu Sumiya ,  Hisanobu Azuma

IPC分类号： G09G5/02

CPC分类号： G09G3/22 ,  G09G2300/08 ,  G09G2320/041 ,  G09G2320/0666

摘要： In an image display apparatus, each sub-pixel includes a phosphor configured to emit light of a predetermined color when the phosphor is irradiated with electrons, an electron emission device configured to irradiate the phosphor with the electrons, and a resistor connected in series to the electron emission device and having a negative temperature characteristic of resistance. In three or more sub-pixels with different luminescent colors included in each pixel, the resistor is configured such that a sub-pixel having a phosphor with a smaller temperature dependency of luminescent brightness has a resistor with a greater activation energy, or the resistor is configured such that the resistor is made of the same material for the three or more sub-pixel and such that a sub-pixel having a phosphor with a smaller temperature dependency of luminescent brightness has a resistor with a greater resistance.

摘要翻译： 在图像显示装置中，每个子像素包括配置为当荧光体被电子照射时发射预定颜色的光的荧光体，被配置为用荧光体照射电子的电子发射装置，以及与 具有电阻的负温度特性。 在每个像素中包括不同发光颜色的三个或更多个子像素中，电阻器被配置为使得具有具有较低的发光亮度温度依赖性的荧光体的子像素具有较大的激活能量的电阻器，或者电阻器 配置为使得电阻器由用于三个或更多个子像素的相同材料制成，并且使得具有具有较低温度依赖性的发光亮度的荧光体的子像素具有较大电阻的电阻器。

公开(公告)号：US08378937B2

公开(公告)日：2013-02-19

申请号：US12620346

申请日：2009-11-17

申请人： Jun Iba ,  Toshiharu Sumiya ,  Hisanobu Azuma

发明人： Jun Iba ,  Toshiharu Sumiya ,  Hisanobu Azuma

IPC分类号： G09G3/30

CPC分类号： G09G3/22 ,  G09G2300/08 ,  G09G2320/041 ,  G09G2320/0666

摘要： In an image display apparatus, each sub-pixel includes a phosphor configured to emit light of a predetermined color when the phosphor is irradiated with electrons, an electron emission device configured to irradiate the phosphor with the electrons, and a resistor connected in series to the electron emission device and having a negative temperature characteristic of resistance. In three or more sub-pixels with different luminescent colors included in each pixel, the resistor is configured such that a sub-pixel having a phosphor with a smaller temperature dependency of luminescent brightness has a resistor with a greater activation energy, or the resistor is configured such that the resistor is made of the same material for the three or more sub-pixel and such that a sub-pixel having a phosphor with a smaller temperature dependency of luminescent brightness has a resistor with a greater resistance.

摘要翻译： 在图像显示装置中，每个子像素包括配置为当荧光体被电子照射时发射预定颜色的光的荧光体，被配置为用荧光体照射电子的电子发射装置，以及与 具有电阻的负温度特性。 在每个像素中包括不同发光颜色的三个或更多个子像素中，电阻器被配置为使得具有具有较低的发光亮度温度依赖性的荧光体的子像素具有较大的激活能量的电阻器，或者电阻器 配置为使得电阻器由用于三个或更多个子像素的相同材料制成，并且使得具有具有较低温度依赖性的发光亮度的荧光体的子像素具有较大电阻的电阻器。

公开(公告)号：US08084932B2

公开(公告)日：2011-12-27

申请号：US12770201

申请日：2010-04-29

申请人： Takanori Suwa ,  Hisanobu Azuma ,  Toshiharu Sumiya

发明人： Takanori Suwa ,  Hisanobu Azuma ,  Toshiharu Sumiya

IPC分类号： H01J1/62

CPC分类号： H01J9/025 ,  H01J1/3046 ,  H01J3/022 ,  H01J31/127 ,  H01J2329/0423 ,  H01J2329/4613 ,  H01J2329/4634

摘要： Deformation of a gate by Coulomb force generated when operating an electron-emitting device is inhibited by appropriately maintaining relationship between film thickness h of the gate and distance L from an outer surface of an insulating member to an inner surface of a concave portion. According to this, in an electron beam apparatus provided with a laminate-type electron-emitting device, the deformation of the gate is prevented to reduce variation in electron emission characteristics, thereby preventing the element from being broken.

摘要翻译： 通过适当地保持栅极的膜厚h和从绝缘构件的外表面到凹部的内表面的距离L之间的关系来抑制通过在操作电子发射器件时产生的库仑力产生的门的变形。 据此，在具有层压型电子发射器件的电子束装置中，防止了栅极的变形，减小了电子发射特性的变化，从而防止了元件的破损。

公开(公告)号：US08035294B2

公开(公告)日：2011-10-11

申请号：US12770159

申请日：2010-04-29

申请人： Hirotomo Taniguchi ,  Toshiharu Sumiya ,  Hisanobu Azuma ,  Takanori Suwa

发明人： Hirotomo Taniguchi ,  Toshiharu Sumiya ,  Hisanobu Azuma ,  Takanori Suwa

IPC分类号： H01J1/62 ,  H01J29/46

CPC分类号： H01J1/3046 ,  H01J31/127

摘要： In an electron beam apparatus including an electron emission element and an anode, the electron emission element includes a gate 5 and a cathode 6 having a projection portion. The gate 5 and the cathode 6 are located in a surface of an insulating member 3 including a recess 7. The projection portion of the cathode 6 has a height distribution, and an average value dav (m) of a shortest distance between the gate 5 and the projection portion of the cathode 6 and a difference h (m) between the average value dav and a shortest distance dmin (m) from the gate 5 to a maximum convex portion of the projection portion of the cathode 6 satisfy a relationship of h/dav

摘要翻译： 在包括电子发射元件和阳极的电子束装置中，电子发射元件包括具有突出部分的栅极5和阴极6。 栅极5和阴极6位于包括凹部7的绝缘构件3的表面中。阴极6的突出部分具有高度分布，并且栅极5之间的最短距离的平均值dav（m） 并且阴极6的突出部分和从栅极5到阴极6的突出部分的最大凸部的平均值dav与最短距离dmin（m）之间的差h（m）满足关系h /dav<0.39。

公开(公告)号：US20110006666A1

公开(公告)日：2011-01-13

申请号：US12793351

申请日：2010-06-03

申请人： Toshiharu Sumiya ,  Hisanobu Azuma ,  Takanori Suwa ,  Hirotomo Taniguchi

发明人： Toshiharu Sumiya ,  Hisanobu Azuma ,  Takanori Suwa ,  Hirotomo Taniguchi

IPC分类号： H01J1/62 ,  H01J1/02

CPC分类号： H01J1/3046 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/316 ,  H01J2329/0486

摘要： In an electron beam apparatus including a lamination electron emitting device, it is an object to enhance electron emission efficiency by controlling an electron emission point at which electrons are emitted. In the device, an insulating member and a gate are formed on a substrate, a recess portion is formed in the insulating member, a protruding portion protruding from an edge of the recess portion toward the gate is provided at an end in opposition to the gate, of a cathode 6 arranged on a side surface of the insulating member, and convex portions at a distance of not less than 1 nm and not more than 5 nm from the gate in a width direction of the protruding portion are included in a density of 10% or less in a width direction of the cathode.

摘要翻译： 在包括层压电子发射器件的电子束装置中，通过控制发射电子的电子发射点来提高电子发射效率。 在该装置中，绝缘构件和栅极形成在基板上，在绝缘构件中形成有凹部，在与栅极相反的端部设置有从凹部的边缘向栅极突出的突出部 的布置在所述绝缘构件的侧面上的阴极6和在所述突出部的宽度方向上距所述栅极不小于1nm且不大于5nm的距离的凸部包括在 在阴极的宽度方向上为10％以下。

公开(公告)号：US20100289399A1

公开(公告)日：2010-11-18

申请号：US12770201

申请日：2010-04-29

申请人： Takanori Suwa ,  Hisanobu Azuma ,  Toshiharu Sumiya

发明人： Takanori Suwa ,  Hisanobu Azuma ,  Toshiharu Sumiya

IPC分类号： H01J31/10

CPC分类号： H01J9/025 ,  H01J1/3046 ,  H01J3/022 ,  H01J31/127 ,  H01J2329/0423 ,  H01J2329/4613 ,  H01J2329/4634

摘要： Deformation of a gate by Coulomb force generated when operating an electron-emitting device is inhibited by appropriately maintaining relationship between film thickness h of the gate and distance L from an outer surface of an insulating member to an inner surface of a concave portion. According to this, in an electron beam apparatus provided with a laminate-type electron-emitting device, the deformation of the gate is prevented to reduce variation in electron emission characteristics, thereby preventing the element from being broken.

摘要翻译： 通过适当地保持栅极的膜厚h和从绝缘构件的外表面到凹部的内表面的距离L之间的关系来抑制通过在操作电子发射器件时产生的库仑力产生的门的变形。 据此，在具有层压型电子发射器件的电子束装置中，防止了栅极的变形，减小了电子发射特性的变化，从而防止了元件的破损。

公开(公告)号：US20100283380A1

公开(公告)日：2010-11-11

申请号：US12770159

申请日：2010-04-29

申请人： Hirotomo Taniguchi ,  Toshiharu Sumiya ,  Hisanobu Azuma ,  Takanori Suwa

发明人： Hirotomo Taniguchi ,  Toshiharu Sumiya ,  Hisanobu Azuma ,  Takanori Suwa

IPC分类号： H01J1/62 ,  H01J29/46

CPC分类号： H01J1/3046 ,  H01J31/127

摘要： In an electron beam apparatus including an electron emission element and an anode, the electron emission element includes a gate 5 and a cathode 6 having a projection portion. The gate 5 and the cathode 6 are located in a surface of an insulating member 3 including a recess 7. The projection portion of the cathode 6 has a height distribution, and an average value day (m) of a shortest distance between the gate 5 and the projection portion of the cathode 6 and a difference h (m) between the average value day and a shortest distance dmin (m) from the gate 5 to a maximum convex portion of the projection portion of the cathode 6 satisfy a relationship of h/day

摘要翻译： 在包括电子发射元件和阳极的电子束装置中，电子发射元件包括具有突出部分的栅极5和阴极6。 栅极5和阴极6位于包括凹部7的绝缘构件3的表面中。阴极6的突出部具有高度分布，并且栅极5之间的最短距离的平均值day（m） 并且阴极6的突出部分和从栅极5到阴极6的突出部分的最大凸部的平均值day和最短距离dmin（m）之间的差h（m）满足关系h /day<0.39。

公开(公告)号：US20080238288A1

公开(公告)日：2008-10-02

申请号：US12051890

申请日：2008-03-20

申请人： Jun Iba ,  Hisanobu Azuma

发明人： Jun Iba ,  Hisanobu Azuma

IPC分类号： H01J29/86

CPC分类号： H01J1/316 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

摘要： A three-dimensional structure forming a space in which a wiring-side portion of a device electrode is located is arranged on a rear plate. A surface potential of the three-dimensional structure is defined so that an electric field intensity of the space becomes weaker than an average electric field intensity expressed below, average electric field intensity=Va/d, where Va is application voltage of an anode electrode, and d is an interval between a rear plate and the face plate. The device electrode includes a high-temperature portion where temperature locally rises when current flows through the device electrode. The high-temperature portion is positioned in the space or at a distance of less than or equal to 20 μm from the space.

摘要翻译： 形成其中装置电极的布线侧部分所在的空间的三维结构布​​置在后板上。 定义三维结构的表面电位，使得空间的电场强度比以下表示的平均电场强度弱，<？in-line-formula description =“In-line Formulas”end =“lead “？>平均电场强度= Va / d，<？在线公式描述=”在线公式“end =”tail“？>其中Va是阳极电极的施加电压，d是 后板和面板。 器件电极包括当电流流过器件电极时温度局部上升的高温部分。 高温部分位于空间中或距离空间小于或等于20μm的距离处。

公开(公告)号：US07427826B2

公开(公告)日：2008-09-23

申请号：US11331111

申请日：2006-01-13

申请人： Jun Iba ,  Yasuo Ohashi ,  Hisanobu Azuma ,  Takahiro Hachisu ,  Masanori Takahashi

发明人： Jun Iba ,  Yasuo Ohashi ,  Hisanobu Azuma ,  Takahiro Hachisu ,  Masanori Takahashi

IPC分类号： H01J1/00 ,  H01J9/02

CPC分类号： H01J3/026 ,  H01J31/127

摘要： There provided is an electron beam apparatus of preventing surface creeping discharge from newly arising due to discharge that arises between an anode electrode and an electron-emitting device. In an electron-emitting device including a scan signal device electrode and an information signal device electrode, a portion of the scan signal device electrode is covered by an insulating layer of insulating scan signal wiring from information signal wiring, an additional electrode is connected to the scan signal device electrode at an end portion of the insulating layer and the additional electrode is configured so that energy Ee being lost due to melting of the additional electrode is larger than energy Ea of discharge current flowing in to the electron-emitting device.

摘要翻译： 提供了一种电子束装置，其防止由于在阳极电极和电子发射器件之间产生的放电而新出现的表面蠕变放电。 在包括扫描信号器件电极和信息信号器件电极的电子发射器件中，扫描信号器件电极的一部分被来自信息信号布线的绝缘扫描信号布线的绝缘层覆盖，附加电极连接到 在绝缘层的端部处的扫描信号器件电极和附加电极被配置为使得由于附加电极的熔化而损失的能量Ee大于流入电子发射器件的放电电流的能量Ea。